PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FXT790A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL MIN. Transition Frequency fT 100 Input Capacitance Cibo Output Capacitance Switching Times TYP. MAX. UNIT CONDITIONS. MHz IC=-50mA, VCE=-5V f=50MHz 225 pF VEB=-0.5V, f=1MHz Cobo 24 pF VCB=-10V, f=1MHz ton toff 35 600 ns ns IC=-500mA, IB1=-50mA IB2=-50mA, VCC=-10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% THERMAL CHARACTERISTICS PARAMETER SYMBOL Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) Thermal Resistance: Junction to Ambient1 Junction to Ambient2 Junction to Case MAX. UNIT 175 116 70 °C/W °C/W °C/W ISSUE 2 APRIL 94 FEATURES * 40 Volt VCEO * Gain of 200 at IC=1 Amps * Very low saturation voltage APPLICATIONS * Darlington replacement * Siren driver * Battery powered circuits * Motor drivers B C E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -6 A Continuous Collector Current IC -2 A Practical Power Dissipation* Ptotp 1.5 W Ptot 1 5.7 W mW/°C -55 to +200 °C Power Dissipation Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. FXT790A at Tamb=25°C derate above 25°C Tj:Tstg Operating and Storage Temperature Range *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) 200 Thermal Resistance (°C/W) Max Power Dissipation - (Watts) 2.5 2.0 C 1.5 Am 1.0 0.5 0 -40 -20 0 20 40 bie as e nt t te m em pe ra per tu re at u re 60 80 100 120 140 160 180 200 D=1 (D.C.) t1 D=t1/tP tP 100 D=0.5 D=0.2 D=0.1 Single Pulse 0 0.0001 0.001 0.01 0.1 1 10 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-63 PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage TYP. MAX. UNIT CONDITIONS. -50 V IC=-100µA V(BR)CEO -40 V IC=-10mA* V(BR)EBO -5 V IE=-100µA Collector Cut-Off Current ICBO -0.1 µA VCB=-30V Emitter Cut-Off Current IEBO -0.1 µA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.25 -0.45 -0.75 V V V IC=-500mA, IB=-5mA* IC=-1A, IB=-10mA* IC=-2A, IB=-50mA* Base-Emitter Saturation Voltage VBE(sat) -1.0 V IC=-1A, IB=-10mA* Base-Emitter Turn-On Voltage VBE(on) V IC=-1A, VCE=-2V* Static Forward Current Transfer Ratio hFE -0.75 300 250 200 150 3-62 800 IC=-10mA, VCE=-2V* IC=-500mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FXT790A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL MIN. Transition Frequency fT 100 Input Capacitance Cibo Output Capacitance Switching Times TYP. MAX. UNIT CONDITIONS. MHz IC=-50mA, VCE=-5V f=50MHz 225 pF VEB=-0.5V, f=1MHz Cobo 24 pF VCB=-10V, f=1MHz ton toff 35 600 ns ns IC=-500mA, IB1=-50mA IB2=-50mA, VCC=-10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% THERMAL CHARACTERISTICS PARAMETER SYMBOL Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) Thermal Resistance: Junction to Ambient1 Junction to Ambient2 Junction to Case MAX. UNIT 175 116 70 °C/W °C/W °C/W ISSUE 2 APRIL 94 FEATURES * 40 Volt VCEO * Gain of 200 at IC=1 Amps * Very low saturation voltage APPLICATIONS * Darlington replacement * Siren driver * Battery powered circuits * Motor drivers B C E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -6 A Continuous Collector Current IC -2 A Practical Power Dissipation* Ptotp 1.5 W Ptot 1 5.7 W mW/°C -55 to +200 °C Power Dissipation Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. FXT790A at Tamb=25°C derate above 25°C Tj:Tstg Operating and Storage Temperature Range *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) 200 Thermal Resistance (°C/W) Max Power Dissipation - (Watts) 2.5 2.0 C 1.5 Am 1.0 0.5 0 -40 -20 0 20 40 bie as e nt t te m em pe ra per tu re at u re 60 80 100 120 140 160 180 200 D=1 (D.C.) t1 D=t1/tP tP 100 D=0.5 D=0.2 D=0.1 Single Pulse 0 0.0001 0.001 0.01 0.1 1 10 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-63 PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage TYP. MAX. UNIT CONDITIONS. -50 V IC=-100µA V(BR)CEO -40 V IC=-10mA* V(BR)EBO -5 V IE=-100µA Collector Cut-Off Current ICBO -0.1 µA VCB=-30V Emitter Cut-Off Current IEBO -0.1 µA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.25 -0.45 -0.75 V V V IC=-500mA, IB=-5mA* IC=-1A, IB=-10mA* IC=-2A, IB=-50mA* Base-Emitter Saturation Voltage VBE(sat) -1.0 V IC=-1A, IB=-10mA* Base-Emitter Turn-On Voltage VBE(on) V IC=-1A, VCE=-2V* Static Forward Current Transfer Ratio hFE -0.75 300 250 200 150 3-62 800 IC=-10mA, VCE=-2V* IC=-500mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V*