DIODES MBRM360_1

SPICE MODEL: MBRM360
MBRM360
3A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
POWERMITEâ3
Features
·
Guard Ring Die Construction for
Transient Protection
·
·
·
Low Power Loss, High Efficiency
·
Lead Free Finish/RoHS Compliant Version (Note 2)
E
A
Low Reverse Current
G
P
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
3
·
·
·
·
·
·
·
Case: POWERMITEâ3, Molded Plastic
1
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish). e3
A
4.03
4.09
B
6.40
6.61
.889 NOM
1.83 NOM
1.10
D
K
C
C
H
5.01
5.17
J
4.37
4.43
.178 NOM
K
L
.71
L
Marking: See Page 3
PIN 2
Note:
Weight: 0.072 grams (approximate)
PIN 3, BOTTOMSIDE
HEAT SINK
Pins 1 & 2 must be electrically
connected at the printed circuit board.
1.14
.178 NOM
G
M
PIN 1
Maximum Ratings
Max
E
2
Polarity: See Diagram
Ordering Information: See Page 3
Min
D
Case Material: Molded Plastic: UL Flammability
Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Dim
C
H
J
B
Mechanical Data
·
·
POWERMITEâ3
.77
M
.36
.46
P
1.73
1.83
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
Value
Unit
VRRM
VRWM
VR
60
V
VR(RMS)
42
V
IO
3
A
IFSM
100
50
A
RqJS
3.2
°C/W
Tj
-55 to +125
°C
TSTG
-55 to +150
°C
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(See also Figure 5)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
@ TC = 25°C
@ TC = 100°C
Typical Thermal Resistance Junction to Soldering Point
Operating Temperature Range
Storage Temperature Range
Electrical Characteristics
@ TA = 25°C unless otherwise specified
Symbol
Min
V(BR)R
60
Forward Voltage
VFM
¾
¾
¾
¾
Reverse Current (Note 1)
IRM
¾
¾
¾
Total Capacitance
CT
¾
Characteristic
Reverse Breakdown Voltage (Note 1)
Notes:
Typ
Max
Unit
¾
¾
V
IR = 0.2mA
0.59
0.53
0.72
0.63
0.63
0.57
0.76
0.67
V
IF = 3A, Tj = 25°C
IF = 3A, Tj = 125°C
IF = 6A, Tj = 25°C
IF = 6A, Tj = 125°C
2.0
0.6
2.5
200
20
150
mA
mA
mA
Tj = 25°C, VR = 60V
Tj = 100°C, VR = 60V
Tj = 125°C, VR = 60V
130
¾
pF
f = 1.0MHz, VR = 4.0V DC
Test Condition
1. Short duration test pulse used to minimize self-heating effect.
2. RoHS revision 13.2.2003. High Temperature Solder Exemption Applied, see EU Directive Annex Note 7.
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IF, INSTANTANEOUS FORWARD CURRENT (A)
10,000
10
Tj = +125°C
1000
Tj = +100°C
Tj = +125ºC
1.0
100
Tj = +25ºC
Tj = +75°C
10
Tj = +100ºC
0.1
1
Tj = +25°C
0.01
0.1
0
0.2
0.4
0.6
0.8
1.0
0
30
40
50
60
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 2 Typical Reverse Characteristics
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Typ. Forward Characteristics
1000
100
Single Half-Sine-Wave
f = 1MHz
CT, TOTAL CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
20
10
80
60
TC = +25ºC
40
TC = +100ºC
20
100
10
0
1
10
100
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Forward Surge Current
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0
7.5
15
22.5 30
37.5 45
52.5
60
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Capacitance vs. Reverse Voltage
MBRM360
PF(AV), AVERAGE FORWARD POWER DISSIPATION (W)
IF, DC FORWARD CURRENT (A)
4
3.5
Note 3
3
2.5
Note 4
2
Note 5
1.5
1
0.5
0
25
Notes:
125
75
100
50
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 DC Forward Current Derating
Note 6
3
2
1
Note 7
0
0
1
2
3
4
5
6
7
IF(AV), AVERAGE FORWARD CURRENT (A)
Fig. 6 Forward Power Dissipation
3. TA = TSOLDERING POINT, RqJS = 3.2°C/W, RqSA = 0°C/W.
4. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad
dimensions 0.25” x 1.0”. RqJA in range of 20-40°C/W.
5. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout
document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of
100-120°C/W.
6. Maximum power dissipation when the device is mounted in accordance to the conditions described in Note 4.
7. Maximum power dissipation when the device is mounted in accordance to the conditions described in Note 5.
Ordering Information
Notes:
150
4
(Note 8)
Device
Packaging
Shipping
MBRM360-13-F
POWERMITEâ3
5000/Tape & Reel
8. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
MBRM360
YYWW(K)
MBRM360 = Product type marking code
= Manufacturers’ code marking
YYWW = Date code marking
YY = Last digit of year ex: 02 for 2002
WW = Week code 01 to 52
(K) = Factory Designator
POWERMITE is a registered trademark of Microsemi Corporation.
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MBRM360
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will
agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the
President of Diodes Incorporated.
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MBRM360