SPICE MODEL: MBRM360 MBRM360 3A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER POWERMITEâ3 Features · Guard Ring Die Construction for Transient Protection · · · Low Power Loss, High Efficiency · Lead Free Finish/RoHS Compliant Version (Note 2) E A Low Reverse Current G P For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications 3 · · · · · · · Case: POWERMITEâ3, Molded Plastic 1 Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish). e3 A 4.03 4.09 B 6.40 6.61 .889 NOM 1.83 NOM 1.10 D K C C H 5.01 5.17 J 4.37 4.43 .178 NOM K L .71 L Marking: See Page 3 PIN 2 Note: Weight: 0.072 grams (approximate) PIN 3, BOTTOMSIDE HEAT SINK Pins 1 & 2 must be electrically connected at the printed circuit board. 1.14 .178 NOM G M PIN 1 Maximum Ratings Max E 2 Polarity: See Diagram Ordering Information: See Page 3 Min D Case Material: Molded Plastic: UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020C Dim C H J B Mechanical Data · · POWERMITEâ3 .77 M .36 .46 P 1.73 1.83 All Dimensions in mm @ TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Value Unit VRRM VRWM VR 60 V VR(RMS) 42 V IO 3 A IFSM 100 50 A RqJS 3.2 °C/W Tj -55 to +125 °C TSTG -55 to +150 °C Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (See also Figure 5) Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load @ TC = 25°C @ TC = 100°C Typical Thermal Resistance Junction to Soldering Point Operating Temperature Range Storage Temperature Range Electrical Characteristics @ TA = 25°C unless otherwise specified Symbol Min V(BR)R 60 Forward Voltage VFM ¾ ¾ ¾ ¾ Reverse Current (Note 1) IRM ¾ ¾ ¾ Total Capacitance CT ¾ Characteristic Reverse Breakdown Voltage (Note 1) Notes: Typ Max Unit ¾ ¾ V IR = 0.2mA 0.59 0.53 0.72 0.63 0.63 0.57 0.76 0.67 V IF = 3A, Tj = 25°C IF = 3A, Tj = 125°C IF = 6A, Tj = 25°C IF = 6A, Tj = 125°C 2.0 0.6 2.5 200 20 150 mA mA mA Tj = 25°C, VR = 60V Tj = 100°C, VR = 60V Tj = 125°C, VR = 60V 130 ¾ pF f = 1.0MHz, VR = 4.0V DC Test Condition 1. Short duration test pulse used to minimize self-heating effect. 2. RoHS revision 13.2.2003. High Temperature Solder Exemption Applied, see EU Directive Annex Note 7. DS30355 Rev. 4 - 2 1 of 4 www.diodes.com MBRM360 ã Diodes Incorporated IF, INSTANTANEOUS FORWARD CURRENT (A) 10,000 10 Tj = +125°C 1000 Tj = +100°C Tj = +125ºC 1.0 100 Tj = +25ºC Tj = +75°C 10 Tj = +100ºC 0.1 1 Tj = +25°C 0.01 0.1 0 0.2 0.4 0.6 0.8 1.0 0 30 40 50 60 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 2 Typical Reverse Characteristics VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Typ. Forward Characteristics 1000 100 Single Half-Sine-Wave f = 1MHz CT, TOTAL CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) 20 10 80 60 TC = +25ºC 40 TC = +100ºC 20 100 10 0 1 10 100 NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Peak Forward Surge Current DS30355 Rev. 4 - 2 2 of 4 www.diodes.com 0 7.5 15 22.5 30 37.5 45 52.5 60 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Capacitance vs. Reverse Voltage MBRM360 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) IF, DC FORWARD CURRENT (A) 4 3.5 Note 3 3 2.5 Note 4 2 Note 5 1.5 1 0.5 0 25 Notes: 125 75 100 50 TA, AMBIENT TEMPERATURE (°C) Fig. 5 DC Forward Current Derating Note 6 3 2 1 Note 7 0 0 1 2 3 4 5 6 7 IF(AV), AVERAGE FORWARD CURRENT (A) Fig. 6 Forward Power Dissipation 3. TA = TSOLDERING POINT, RqJS = 3.2°C/W, RqSA = 0°C/W. 4. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad dimensions 0.25” x 1.0”. RqJA in range of 20-40°C/W. 5. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of 100-120°C/W. 6. Maximum power dissipation when the device is mounted in accordance to the conditions described in Note 4. 7. Maximum power dissipation when the device is mounted in accordance to the conditions described in Note 5. Ordering Information Notes: 150 4 (Note 8) Device Packaging Shipping MBRM360-13-F POWERMITEâ3 5000/Tape & Reel 8. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information MBRM360 YYWW(K) MBRM360 = Product type marking code = Manufacturers’ code marking YYWW = Date code marking YY = Last digit of year ex: 02 for 2002 WW = Week code 01 to 52 (K) = Factory Designator POWERMITE is a registered trademark of Microsemi Corporation. DS30355 Rev. 4 - 2 3 of 4 www.diodes.com MBRM360 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30355 Rev. 4 - 2 4 of 4 www.diodes.com MBRM360