ONSEMI NCS2540DTBG

NCS2540
Triple 750 MHz Voltage
Feedback Op Amp with
Enable Feature
NCS2540 is a triple 750 MHz voltage feedback monolithic
operational amplifier featuring high slew rate and low differential gain
and phase error. The voltage feedback architecture allows for a
superior bandwidth and low power consumption. This device features
an enable pin.
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MARKING
DIAGRAM
Features
•
•
•
•
•
•
•
•
−3.0 dB Small Signal BW (AV = +2.0, VO = 0.5 Vp−p) 750 MHz Typ
Slew Rate 1700 V/ms
Supply Current 13 mA/amp
Input Referred Voltage Noise 5.0 nV/ ǸHz
THD −64 dBc (f = 5.0 MHz, VO = 2.0 Vp−p)
Output Current 100 mA
Enable Pin Available
These are Pb−Free Devices
Applications
• Line Drivers
• Radar/Communication Receivers
NORMALIZED GAIN (dB)
3
16
1
TSSOP−16
DT SUFFIX
CASE 948F
2540 = NCS2540
A
= Assembly Location
L
= Wafer Lot
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
0
TSSOP−16 PINOUT
VOUT = 2.0 VPP
−3
VOUT = 0.5 VPP
−12
−15
1k
Gain = +2
VS = ±5V
RF = 150W
RL = 150W
10k
100k
10M 100M
1M
FREQUENCY (Hz)
1
−
16 VCC1
+IN1
2
+
15 OUT1
VEE1
3
−IN1
VOUT = 1.0 VPP
−6
−9
NCS
2540
ALYWG
G
1G
10G
14 EN
−IN2
4
−
+IN2
5
+
VEE2
6
13 VCC2
12 OUT2
11
−IN3
7
−
+IN3
8
+
VCC3
10 OUT3
9
VEE3
(Top View)
Figure 1. Frequency Response:
Gain (dB) vs. Frequency Av = +2.0
ORDERING INFORMATION
Package
Shipping†
TSSOP−16
(Pb−Free)
96 Units / Rail
NCS2540DTBR2G TSSOP−16
(Pb−Free)
2500 / Tape &
Reel
Device
NCS2540DTBG
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2007
February, 2007 − Rev. 2
1
Publication Order Number:
NCS2540/D
NCS2540
PIN FUNCTION DESCRIPTION
Pin
Symbol
Function
10, 12, 15
OUTx
Output
Equivalent Circuit
VCC
ESD
OUT
VEE
3, 6, 9
VEE
Negative Power Supply
2, 5, 8
+INx
Non−inverted Input
VCC
ESD
ESD
−IN
+IN
VEE
1, 4, 7
−INx
Inverted Input
11, 13, 16
VCC
Positive Power Supply
See Above
14
EN
Enable
VCC
ESD
EN
VEE
ENABLE PIN TRUTH TABLE
Enable
High
Low*
Disabled
Enabled
*Default open state
VCC
−IN
+IN
OUT
CC
VEE
Figure 2. Simplified Device Schematic
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2
NCS2540
ATTRIBUTES
Characteristics
Value
ESD
Human Body Model
Machine Model
Charged Device Model
2.0 kV
200 V
1.0 kV
Moisture Sensitivity (Note 1)
Flammability Rating
Level 1
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
1. For additional information, see Application Note AND8003/D.
MAXIMUM RATINGS
Parameter
Symbol
Rating
Unit
Power Supply Voltage
VS
11
Vdc
Input Voltage Range
VI
vVS
Vdc
Input Differential Voltage Range
VID
vVS
Vdc
Output Current
IO
100
mA
Maximum Junction Temperature (Note 2)
TJ
150
°C
Operating Ambient Temperature
TA
−40 to +85
°C
Storage Temperature Range
Tstg
−60 to +150
°C
Power Dissipation
PD
(See Graph)
mW
RqJA
179
°C/W
Thermal Resistance, Junction−to−Air
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded.
MAXIMUM POWER DISSIPATION
MAXIMUM POWER DISSIPATION (mW)
The maximum power that can be safely dissipated is
limited by the associated rise in junction temperature. For
the plastic packages, the maximum safe junction
temperature is 150°C. If the maximum is exceeded
momentarily, proper circuit operation will be restored as
soon as the die temperature is reduced. Leaving the device
in the “overheated’’ condition for an extended period can
result in device damage.
1400
1200
1000
800
600
400
200
0
−50
−25
25
50
0
75 100
AMBIENT TEMPERATURE (C)
125 150
Figure 3. Power Dissipation vs. Temperature
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3
NCS2540
AC ELECTRICAL CHARACTERISTICS (VCC = +5.0 V, VEE = −5.0 V, TA = −40°C to +85°C, RL = 150 W to GND, RF = 150 W,
AV = +2.0, Enable is left open, unless otherwise specified).
Symbol
Characteristic
Conditions
Min
Typ
Max
Unit
FREQUENCY DOMAIN PERFORMANCE
BW
GF0.1dB
Bandwidth
3.0 dB Small Signal
3.0 dB Large Signal
0.1 dB Gain Flatness
Bandwidth
MHz
AV = +2.0, VO = 0.5 Vp−p
AV = +2.0, VO = 2.0 Vp−p
750
350
AV = +2.0
40
MHz
dG
Differential Gain
AV = +2.0, RL = 150 W, f = 3.58 MHz
0.07
%
dP
Differential Phase
AV = +2.0, RL = 150 W, f = 3.58 MHz
0.01
°
Slew Rate
AV = +2.0, Vstep = 2.0 V
1700
V/ms
Settling Time
0.1%
AV = +2.0, Vstep = 2.0 V
10
(10%−90%) AV = +2.0, Vstep = 2.0 V
TIME DOMAIN RESPONSE
SR
ts
ns
tr tf
Rise and Fall Time
2.0
ns
tON
Turn−on Time
20
ns
tOFF
Turn−off Time
40
ns
HARMONIC/NOISE PERFORMANCE
THD
Total Harmonic Distortion
f = 5.0 MHz, VO = 2.0 Vp−p
−64
dB
HD2
2nd Harmonic Distortion
f = 5.0 MHz, VO = 2.0 Vp−p
−65
dBc
HD3
3rd Harmonic Distortion
f = 5.0 MHz, VO = 2.0 Vp−p
−75
dBc
IP3
Third−Order Intercept
f = 10 MHz, VO = 1.0 Vp−p
40
dBm
Spurious−Free Dynamic
Range
f = 5.0 MHz, VO = 2.0 Vp−p
65
dBc
SFDR
eN
Input Referred Voltage Noise
f = 1.0 MHz
5.0
nVń ǸHz
iN
Input Referred Current Noise
f = 1.0 MHz
4.0
pAń ǸHz
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4
NCS2540
DC ELECTRICAL CHARACTERISTICS (VCC = +5.0 V, VEE = −5.0 V, TA = −40°C to +85°C, RL = 150 W to GND, RF = 150 W,
AV = +2.0, Enable is left open, unless otherwise specified).
Symbol
Characteristic
Conditions
Min
Typ
Max
Unit
−10
0
+10
mV
DC PERFORMANCE
VIO
DVIO/DT
IIB
DIIB/DT
Input Offset Voltage (Note 3)
Input Offset Voltage
Temperature Coefficient
6.0
Input Bias Current
VO = 0 V
"3.2
Input Bias Current
Temperature Coefficient
VO = 0 V
"40
VIH
Input High Voltage (Enable)
(Note 3)
VIL
Input Low Voltage (Enable)
(Note 3)
mV/°C
"20
mA
nA/°C
3.0
V
1.0
V
INPUT CHARACTERISTICS
VCM
CMRR
Input Common Mode Voltage
Range (Note 3)
Common Mode Rejection
Ratio (Note 3)
(See Graph)
"3.0
"3.2
V
40
50
dB
RIN
Input Resistance
4.5
MW
CIN
Differential Input
Capacitance
1.0
pF
OUTPUT CHARACTERISTICS
ROUT
0.1
W
VO
Output Resistance
Output Voltage Range
"3.0
"4.0
V
IO
Output Current
"50
"100
mA
10
V
POWER SUPPLY
VS
Operating Voltage Supply
IS,ON
Power Supply Current −
Enabled per amplifier
(Note 3)
IS,OFF
Power Supply Current −
Disabled per amplifier
PSRR
Power Supply Rejection
Ratio (Note 3)
Crosstalk
5.0
(See Graph)
Channel to Channel, f = 5 MHz
3. Guaranteed by design and/or characterization.
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5
40
13
17
mA
0.1
0.3
mA
56
dB
85
dB
NCS2540
AC ELECTRICAL CHARACTERISTICS (VCC = +2.5 V, VEE = −2.5 V, TA = −40°C to +85°C, RL = 150 W to GND, RF = 150 W,
AV = +2.0, Enable is left open, unless otherwise specified).
Symbol
Characteristic
Conditions
Min
Typ
Max
Unit
FREQUENCY DOMAIN PERFORMANCE
BW
GF0.1dB
Bandwidth
3.0 dB Small Signal
3.0 dB Large Signal
0.1 dB Gain Flatness
Bandwidth
MHz
AV = +2.0, VO = 0.5 Vp−p
AV = +2.0, VO = 1.0 Vp−p
550
200
AV = +2.0
35
MHz
dG
Differential Gain
AV = +2.0, RL = 150 W, f = 3.58 MHz
0.07
%
dP
Differential Phase
AV = +2.0, RL = 150 W, f = 3.58 MHz
0.02
°
Slew Rate
AV = +2.0, Vstep = 1.0 V
900
V/ms
Settling Time
0.1%
AV = +2.0, Vstep = 1.0 V
10
(10%−90%) AV = +2.0, Vstep = 1.0 V
TIME DOMAIN RESPONSE
SR
ts
ns
tr tf
Rise and Fall Time
1.7
ns
tON
Turn−on Time
20
ns
tOFF
Turn−off Time
40
ns
HARMONIC/NOISE PERFORMANCE
THD
Total Harmonic Distortion
f = 5.0 MHz, VO = 1.0 Vp−p
−60
dB
HD2
2nd Harmonic Distortion
f = 5.0 MHz, VO = 1.0 Vp−p
−65
dBc
HD3
3rd Harmonic Distortion
f = 5.0 MHz, VO = 1.0 Vp−p
−63
dBc
IP3
Third−Order Intercept
f = 10 MHz, VO = 0.5 Vp−p
35
dBm
Spurious−Free Dynamic
Range
f = 5.0 MHz, VO = 1.0 Vp−p
63
dBc
SFDR
eN
Input Referred Voltage Noise
f = 1.0 MHz
5.0
nVń ǸHz
iN
Input Referred Current Noise
f = 1.0 MHz
4.0
pAń ǸHz
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NCS2540
DC ELECTRICAL CHARACTERISTICS (VCC = +2.5 V, VEE = −2.5 V, TA = −40°C to +85°C, RL = 150 W to GND, RF = 150 W,
AV = +2.0, Enable is left open, unless otherwise specified).
Symbol
Characteristic
Conditions
Min
Typ
Max
Unit
−10
0
+10
mV
DC PERFORMANCE
VIO
DVIO/DT
IIB
DIIB/DT
Input Offset Voltage (Note 4)
Input Offset Voltage
Temperature Coefficient
6.0
Input Bias Current
VO = 0 V
"3.2
Input Bias Current
Temperature Coefficient
VO = 0 V
"40
VIH
Input High Voltage (Enable)
(Note 4)
VIL
Input Low Voltage (Enable)
(Note 4)
mV/°C
"20
mA
nA/°C
1.5
V
0.5
V
INPUT CHARACTERISTICS
VCM
CMRR
Input Common Mode Voltage
Range (Note 4)
Common Mode Rejection
Ratio (Note 4)
(See Graph)
"1.1
"1.5
V
40
50
dB
RIN
Input Resistance
4.5
MW
CIN
Differential Input
Capacitance
1.0
pF
OUTPUT CHARACTERISTICS
ROUT
0.1
W
VO
Output Resistance
Output Voltage Range
"1.1
"1.5
V
IO
Output Current
"50
"100
mA
5.0
V
POWER SUPPLY
VS
Operating Voltage Supply
IS,ON
Power Supply Current −
Enabled per amplifier
IS,OFF
Power Supply Current −
Disabled per amplifier
PSRR
Power Supply Rejection
Ratio (Note 4)
5.0
(See Graph)
Crosstalk
40
Channel to Channel, f = 5 MHz
4. Guaranteed by design and/or characterization.
VIN
+
−
VOUT
RL
RF
RF
Figure 4. Typical Test Setup
(AV = +2.0, RF = 150 kW, RL = 150 W)
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7
11
17
mA
0.1
0.3
mA
56
dB
85
dB
NCS2540
3
12
VOUT = 0.5 VPP
9
NORMALIZED GAIN (dB)
NORMALIZED GAIN (dB)
0
VOUT = 2.0 VPP
−3
VOUT = 1.0 VPP
−6
VOUT = 0.5 VPP
−9
Gain = +2
VS = ±5V
RF = 150W
RL = 150W
−12
−15
1k
10k
100k
6
3
0
−3
−6
−9
−12
−15
1G
10M 100M
1M
FREQUENCY (Hz)
−18
10k
10G
Figure 5. Frequency Response:
Gain (dB) vs. Frequency
Av = +2.0
Gain = +2
VOUT = 1.0 VPP
−6
Gain = +2
VOUT = 2.0 VPP
−9
−12
VS = ±5V
RF = 150W
RL = 150W
−15
100k
6
1G
10G
10M
100M
FREQUENCY (Hz)
0
−3
−6
−9
−12
−18
10k
1G
Gain = +1
3
−15
1M
1M
10M
100M
FREQUENCY (Hz)
9
0
−3
100k
VOUT = 0.7 VPP
12
Gain = +1
VOUT = 1.0 VPP
3
Gain = +1
VS = ±5V
RF = 150W
RL = 150W
Figure 6. Frequency Response:
Gain (dB) vs. Frequency
Av = +1.0
NORMALIZED GAIN (dB)
NORMALIZED GAIN (dB)
6
VOUT = 1.0 VPP
Figure 7. Large Signal Frequency Response
Gain (dB) vs. Frequency
VOUT = 0.5 VPP
VS = ±5V
RF = 150W
RL = 150W
100k
Gain = +2
10M
100M
1M
FREQUENCY (Hz)
1G
Figure 8. Small Signal Frequency Response
Gain (dB) vs. Frequency
VS = ±5V
VS = ±5V
Figure 10. Large Signal Step Response
Vertical: 1 V/div
Horizontal: 3 ns/div
Figure 9. Small Signal Step Response
Vertical: 20 mV/div
Horizontal: 3 ns/div
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8
10G
NCS2540
−40
−50
−55
THD
−60
HD2
−65
HD3
−70
−50
−55
−60
HD2
−65
HD3
−75
1
10
FREQUENCY (MHz)
−80
100
0
0.5
1
50
2
2.5
VOUT (VPP)
3.5
3
4
4.5
−20
VS = ±5V
−25
40
VS = ±5V
CMRR (dB)
−30
30
20
−35
−40
−45
10
0
−50
10
100
1k
10k
−55
10k
1M
100k
FREQUENCY (Hz)
0.08
DIFFERENTIAL GAIN (%)
VS = ±5V
−20
−30
−40
−50
−60
−70
10k
10M
100M
Figure 14. CMRR vs. Frequency
0
−10
1M
FREQUENCY (Hz)
Figure 13. Input Referred Voltage Noise vs.
Frequency
PSRR (dB)
1.5
Figure 12. THD, HD2, HD3 vs. Output Voltage
Figure 11. THD, HD2, HD3 vs. Frequency
VOLTAGE NOISE (nV/√Hz)
THD
−70
−75
−80
Gain = +2
Freq = 5 MHz
VS = ±5V
RF = 150W
RL = 150W
−45
DISTORTION (dB)
−45
DISTORTION (dB)
−40
Gain = +2
VOUT = 2 VPP
VS = ±5V
RF = 150W
RL = 150W
20MHz
Gain = +2
0.06 V = ±5V
S
RF = 150W
0.04
RL = 150W
10MHz
0.02
3.58MHz
0
−0.02
4.43MHz
−0.04
−0.06
100k
1M
10M
−0.08
−0.8
100M
FREQUENCY (Hz)
Figure 15. PSRR vs. Frequency
−0.6
−0.4
0.2
0.4
−0.2
0
OFFSET VOLTAGE (V)
Figure 16. Differential Gain
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9
0.6
0.8
NCS2540
14
20MHz
12
10MHz
0.01
3.58MHz
0
4.43MHz
−0.01
Gain = +2
VS = ±5V
−0.02 RF = 150W
RL = 150W
−0.03
−0.8 −0.6 −0.4
−40°C
11
10
9
8
7
0.4
0.2
−0.2
0
OFFSET VOLTAGE (V)
0.6
6
0.8
4
6
7
8
9
10
11
Figure 18. Supply Current Per Amplifier vs. Power
Supply (Enabled)
8
0.14
OUTPUT VOLTAGE (VPP)
0.12
0.10
85°C
0.08 25°C
−40°C
0.06
0.04
7
25°C
85°C
6
5
−40°C
4
3
0.02
0.00
4
2
5
6
7
8
9
POWER SUPPLY VOLTAGE (V)
10
11
4
Figure 19. Supply Current Per Amplifier vs.
Temperature (Disabled)
6
7
8
9
POWER SUPPLY VOLTAGE (V)
10
11
12
VS = ±5V
10
1
0.1
100k
1M
10M
100M
1G
6
3
0
−3
−6
−12
10k
10G
10pF
9
−9
0.01
10k
5
Figure 20. Output Voltage Swing vs. Supply
Voltage
NORMALIZED GAIN (dB)
100
OUTPUT RESISTANCE (W)
5
POWER SUPPLY VOLTAGE (V)
Figure 17. Differential Phase
CURRENT (mA)
85°C
25°C
13
0.02
CURRENT (mA)
DIFFERENTIAL PHASE (°)
0.03
100pF
Gain = +2
VOUT = 0.5 VPP
VS = ±5V
RF = 150W
RL = 150W
100k
47pF
1M
10M
100M
1G
10G
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 21. Output Resistance vs. Frequency
Figure 22. Frequency Response vs. Capacitive Load
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10
NCS2540
Output waveform: Squarewave, 32 MHz, 600 mVPP
EN
VS = ±5V
EN
VS = ±5V
OUT
OUT
Output waveform: Squarewave, 32 MHz, 600 mVPP
Figure 23. Turn ON Time Delay
Vertical: 500 mV/div (Enable), 200 mV/div (Output)
Horizontal: 5 ns/div
Figure 24. Turn OFF Time Delay
Vertical: 500 mV/div (Enable), 200 mV/div (Output)
Horizontal: 10 ns/div
0
6
−30
−40
NORMALIZED GAIN (dB)
−20
CROSSTALK (dBc)
Channel 1
Gain = +2
VS = ±5V
RF = 150W
RL = 150W
−10
Channel 3
−50
−60
−70
−80
−90
−100
1
10
100
FREQUENCY (MHz)
2
Figure 25. Crosstalk vs Frequency
(Crosstalk measured on Channel 2 with input signal
on Channel 1 and 3)
CH3
0
−2
−4
−6
10k
1000
CH2
4
Gain = +2
VS = ±5V
RF = 150W
RL = 150W
100k
CH1
10M
100M
1M
FREQUENCY (Hz)
1G
10G
Figure 26. Channel Matching (dB) vs Frequency
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NCS2540
Printed Circuit Board Layout Techniques
to input overdrive voltages above the supplies. The ESD
diodes can support high input currents with current limiting
series resistors. Keep these resistor values as low as possible
since high values degrade both noise performance and
frequency response. Under closed−loop operation, the ESD
diodes have no effect on circuit performance. However,
under certain conditions the ESD diodes will be evident. If
the device is driven into a slewing condition, the ESD diodes
will clamp large differential voltages until the feedback loop
restores closed−loop operation. Also, if the device is
powered down and a large input signal is applied, the ESD
diodes will conduct.
NOTE: Human Body Model for +IN and –IN pins are
rated at 0.8kV while all other pins are rated at
2.0kV.
Proper high speed PCB design rules should be used for all
wideband amplifiers as the PCB parasitics can affect the
overall performance. Most important are stray capacitances
at the output and inverting input nodes as it can effect
peaking and bandwidth. A space (3/16″ is plenty) should be
left around the signal lines to minimize coupling. Also,
signal lines connecting the feedback and gain resistors
should be short enough so that their associated inductance
does not cause high frequency gain errors. Line lengths less
than 1/4″ are recommended.
Video Performance
This device designed to provide good performance with
NTSC, PAL, and HDTV video signals. Best performance is
obtained with back terminated loads as performance is
degraded as the load is increased. The back termination
reduces reflections from the transmission line and
effectively masks transmission line and other parasitic
capacitances from the amplifier output stage.
VCC
Internal
Circuitry
External
Pin
ESD Protection
All device pins have limited ESD protection using internal
diodes to power supplies as specified in the attributes table
(see Figure 27). These diodes provide moderate protection
VEE
Figure 27. Internal ESD Protection
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12
NCS2540
PACKAGE DIMENSIONS
TSSOP−16
CASE 948F−01
ISSUE B
16X K REF
0.10 (0.004)
0.15 (0.006) T U
T U
M
S
V
S
K
S
ÉÉÉ
ÇÇÇ
ÇÇÇ
ÉÉÉ
K1
2X
L/2
16
9
J1
B
−U−
L
SECTION N−N
J
PIN 1
IDENT.
N
8
1
0.25 (0.010)
M
0.15 (0.006) T U
S
A
−V−
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH. PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.08 (0.003) TOTAL
IN EXCESS OF THE K DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
N
F
DETAIL E
−W−
C
0.10 (0.004)
−T− SEATING
PLANE
D
H
G
DETAIL E
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
SOLDERING FOOTPRINT*
7.06
1
0.65
PITCH
16X
0.36
16X
1.26
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
13
MILLIMETERS
MIN
MAX
4.90
5.10
4.30
4.50
−−−
1.20
0.05
0.15
0.50
0.75
0.65 BSC
0.18
0.28
0.09
0.20
0.09
0.16
0.19
0.30
0.19
0.25
6.40 BSC
0_
8_
INCHES
MIN
MAX
0.193 0.200
0.169 0.177
−−− 0.047
0.002 0.006
0.020 0.030
0.026 BSC
0.007
0.011
0.004 0.008
0.004 0.006
0.007 0.012
0.007 0.010
0.252 BSC
0_
8_
NCS2540
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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14
ON Semiconductor Website: www.onsemi.com
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For additional information, please contact your local
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NCS2540/D