TSOP344..SS1BS12 Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP344..SS1BS12 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter. The demodulated output signal can directly be decoded by a microprocessor. TSOP344..SS1BS12 is a standard IR remote control receiver series for 3 V supply voltage, with excellent suppression of disturbance signals. 1 2 3 16672 Features Mechanical Data • Photo detector and preamplifier in one package • Internal filter for PCM frequency • Improved shielding against electrical field disturbance • TTL and CMOS compatibility • Output active low • Supply voltage: 2.7 V to 5.5 V • Improved immunity against ambient light Pinning: 1 = OUT, 2 = GND, 3 = VS e3 Parts Table Part Carrier Frequency TSOP34430SS1BS12 30 kHz TSOP34433SS1BS12 33 kHz TSOP34436SS1BS12 36 kHz TSOP34437SS1BS12 36.7 kHz TSOP34438SS1BS12 38 kHz TSOP34440SS1BS12 40 kHz TSOP34456SS1BS12 56 kHz Block Diagram Application Circuit 16833 3 1 Input AGC Band Pass Demodulator OUT 2 PIN Control Circuit 17170 Transmitter TSOPxxxx with TSALxxxx Circuit 30 kΩ VS R1 = 100 Ω VS OUT GND +VS C1 = 4.7 µF µC VO GND GND R1 + C1 recommended to suppress power supply disturbances. The output voltage should not be hold continuously at a voltage below VO = 2.0 V by the external circuit. Document Number 82272 Rev. 1.1, 28-Feb-05 www.vishay.com 1 TSOP344..SS1BS12 Vishay Semiconductors Absolute Maximum Ratings Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Symbol Value Supply Voltage Parameter (Pin 3) Test condition VS - 0.3 to + 6.0 V Supply Current (Pin 3) IS 3 mA Output Voltage (Pin 1) VO - 0.3 to (VS + 0.3) V Output Current (Pin 1) IO 10 mA Tj 100 °C Tstg - 25 to + 85 °C Junction Temperature Storage Temperature Range Operating Temperature Range Unit Tamb - 25 to + 85 °C Power Consumption (Tamb ≤ 85 °C) Ptot 30 mW Soldering Temperature t ≤ 10 s, 1 mm from case Tsd 260 °C Electrical and Optical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Supply Current (Pin 3) Symbol Min Typ. Max Ev = 0, VS = 3 V Test condition ISD 0.7 1.2 1.5 Ev = 40 klx, sunlight ISH Supply Voltage VS Transmission Distance Ev = 0, test signal see fig.1, IR diode TSAL6200, IF = 250 mA Output Voltage Low (Pin 1) IOSL = 0.5 mA, Ee = 0.7 mW/m2, test signal see fig. 1 VOSL Minimum Irradiance (30 - 40 kHz) VS = 3 V Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig.1 Ee min Minimum Irradiance (56 kHz) VS = 3 V Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig.1 Minimum Irradiance (30 - 40 kHz) 1.3 2.7 d Unit mA mA 5.5 35 V m 250 mV 0.2 0.4 mW/m2 Ee min 0.3 0.5 mW/m2 VS = 5 V Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig.1 Ee min 0.35 0.5 mW/m2 Minimum Irradiance (56 kHz) VS = 5 V Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig.1 Ee min 0.45 0.6 mW/m2 Maximum Irradiance tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig. 1 Ee max Directivity Angle of half transmission distance www.vishay.com 2 ϕ1/2 30 W/m2 ± 45 deg Document Number 82272 Rev. 1.1, 28-Feb-05 TSOP344..SS1BS12 Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) Optical Test Signal (IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, T = 10 ms) t tpi * T * tpi w 10/fo is recommended for optimal function VO 16110 Output Signal 1) 2) VOH 7/f0 < td < 15/f0 tpi–5/f0 < tpo < tpi+6/f0 VOL tpo2 ) td1 ) Ton ,Toff – Output Pulse Width ( ms ) Ee t 1.0 0.9 0.8 0.6 0.5 0.3 0.1 0.0 0.1 1.0 10.0 100.0 1000.010000.0 Ee – Irradiance ( mW/m2 ) 16909 Figure 4. Output Pulse Diagram 1.2 E e min / E e – Rel. Responsivity Output Pulse 0.9 t po – Output Pulse Width ( ms ) l = 950 nm, optical test signal, fig.3 0.2 1.0 0.8 Input Burst Duration 0.7 0.6 0.5 0.4 0.3 l = 950 nm, optical test signal, fig.1 0.2 0.1 0.0 0.1 1.0 10.0 mW/m2 1.0 0.8 0.6 0.4 Figure 2. Pulse Length and Sensitivity in Dark Ambient 0.9 1.1 1.3 f/f0 – Relative Frequency 16925 ) f = f0"5% Df ( 3dB ) = f0/10 0.2 0.0 0.7 100.0 1000.010000.0 Ee – Irradiance ( 16908 Figure 5. Frequency Dependence of Responsivity t 600 ms T = 60 ms 94 8134 Output Signal, ( see Fig.4 ) VOH VOL Ton Toff Ee min– Threshold Irradiance ( mW/m 2 ) Optical Test Signal 600 ms VO Toff 0.4 Figure 1. Output Function Ee Ton 0.7 t 16911 Figure 3. Output Function Document Number 82272 Rev. 1.1, 28-Feb-05 4.0 3.5 3.0 Correlation with ambient light sources: 10W/m2^1.4klx (Std.illum.A,T=2855K) 10W/m2^8.2klx (Daylight,T=5900K) 2.5 2.0 1.5 Ambient, l = 950 nm 1.0 0.5 0.0 0.01 0.10 1.00 10.00 100.00 E – Ambient DC Irradiance (W/m2) Figure 6. Sensitivity in Bright Ambient www.vishay.com 3 TSOP344..SS1BS12 16912 2.0 f = fo 1.5 f = 10 kHz 1.0 f = 1 kHz 0.5 f = 100 Hz 0.0 0.1 1.0 10.0 100.0 1000.0 DVsRMS – AC Voltage on DC Supply Voltage (mV) 0.6 Ee min– Threshold Irradiance ( mW/m 2 ) Ee min– Threshold Irradiance ( mW/m 2 ) Vishay Semiconductors 0.5 0.4 0.3 0.2 0.1 16918 f(E) = f0 1.6 1.2 0.8 0.4 0.0 0.0 0.4 0.8 1.2 E – Field Strength of Disturbance ( kV/m ) 94 8147 1.0 0.8 0.6 0.4 0.2 0.0 750 1050 1150 1.0 E e min – Sensitivity ( mW/m 2 ) Max. Envelope Duty Cycle 950 Figure 11. Relative Spectral Sensitivity vs. Wavelength 0.4 0.3 0.2 0.1 f = 38 kHz, Ee = 2 mW/m2 10 30 50 70 90 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 110 Burst Length ( number of cycles / burst ) Figure 9. Max. Envelope Duty Cycle vs. Burstlength www.vishay.com 0.9 0.1 0.0 4 850 λ - Wavelength ( nm ) 16919 Figure 8. Sensitivity vs. Electric Field Disturbances 16917 90 1.2 2.0 1.6 0.0 –30 –15 0 15 30 45 60 75 Tamb – Ambient Temperature ( qC ) Figure 10. Sensitivity vs. Ambient Temperature S ( λ ) rel - Relative Spectral Sensitivity E e min– Threshold Irradiance ( mW/m 2 ) Figure 7. Sensitivity vs. Supply Voltage Disturbances 2.0 Sensitivity in dark ambient 17185 VS – Supply Voltage ( V ) Figure 12. Sensitivity vs. Supply Voltage Document Number 82272 Rev. 1.1, 28-Feb-05 TSOP344..SS1BS12 Vishay Semiconductors 0q 10q 20q 30q • Signals from fluorescent lamps with electronic ballast with high or low modulation (see Figure 14 or Figure 15). 40q 0.9 50q 0.8 60q 70q 0.7 80q 0.6 96 12223p2 IR Signal 1.0 0.6 0.4 0.2 0 0.2 0.4 drel – Relative Transmission Distance IR Signal from fluorescent lamp with low modulation Figure 13. Directivity 0 5 16920 The circuit of the TSOP348..SS1BS12 is designed in that way that unexpected output pulses due to noise or disturbance signals are avoided. A bandpass filter, an integrator stage and an automatic gain control are used to suppress such disturbances. The distinguishing mark between data signal and disturbance signal are carrier frequency, burst length and duty cycle. The data signal should fulfill the following conditions: • Carrier frequency should be close to center frequency of the bandpass (e.g. 38 kHz). • Burst length should be 10 cycles/burst or longer. • After each burst which is between 10 cycles and 35 cycles a gap time of at least 14 cycles is necessary. • For each burst which is longer than 0.9 ms a corresponding gap time is necessary at some time in the data stream. This gap time should be at least 7 times longer than the burst. • Up to 400 short bursts per second can be received continuously. Some examples for suitable data format are: NEC Code, Toshiba Micom Format, Sharp Code, RC5 Code, R-2000 Code. When a disturbance signal is applied to the TSOP344..SS1BS12 it can still receive the data signal. However the sensitivity is reduced to that level that no unexpected pulses will occur. Some examples for such disturbance signals which are suppressed by the TSOP344..SS1BS12 are: • DC light (e.g. from tungsten bulb or sunlight) • Continuous signal at 38 kHz or at any other frequency Document Number 82272 Rev. 1.1, 28-Feb-05 15 20 Figure 14. IR Signal from Fluorescent Lamp with low Modulation IR Signal from fluorescent lamp with high modulation IR Signal Suitable Data Format 10 Time ( ms ) 0 16921 5 10 15 20 Time ( ms ) Figure 15. IR Signal from Fluorescent Lamp with high Modulation www.vishay.com 5 TSOP344..SS1BS12 Vishay Semiconductors Reel Dimensions Labeling: Reel Barcode-label see 5.6.4 Kraft paper Tape Code 12 Adhesive tape Tape direction Quantity per : Reel (Mat.-No.1764) 1000 Ammopack (Mat.-No.1763) 1000 17029 www.vishay.com 6 Document Number 82272 Rev. 1.1, 28-Feb-05 TSOP344..SS1BS12 Vishay Semiconductors Package Dimensions in mm 16003 Document Number 82272 Rev. 1.1, 28-Feb-05 www.vishay.com 7 TSOP344..SS1BS12 Vishay Semiconductors Package Dimensions in mm 16003 www.vishay.com 8 Document Number 82272 Rev. 1.1, 28-Feb-05 TSOP344..SS1BS12 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 82272 Rev. 1.1, 28-Feb-05 www.vishay.com 9 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1