VISHAY TSOP34438SS1BS12

TSOP344..SS1BS12
Vishay Semiconductors
IR Receiver Modules for Remote Control Systems
Description
The TSOP344..SS1BS12 - series are miniaturized
receivers for infrared remote control systems. PIN
diode and preamplifier are assembled on lead frame,
the epoxy package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. TSOP344..SS1BS12
is a standard IR remote control receiver series for 3 V
supply voltage, with excellent suppression of disturbance signals.
1
2
3
16672
Features
Mechanical Data
• Photo detector and preamplifier in one
package
• Internal filter for PCM frequency
• Improved shielding against electrical
field
disturbance
• TTL and CMOS compatibility
• Output active low
• Supply voltage: 2.7 V to 5.5 V
• Improved immunity against ambient light
Pinning:
1 = OUT, 2 = GND, 3 = VS
e3
Parts Table
Part
Carrier Frequency
TSOP34430SS1BS12
30 kHz
TSOP34433SS1BS12
33 kHz
TSOP34436SS1BS12
36 kHz
TSOP34437SS1BS12
36.7 kHz
TSOP34438SS1BS12
38 kHz
TSOP34440SS1BS12
40 kHz
TSOP34456SS1BS12
56 kHz
Block Diagram
Application Circuit
16833
3
1
Input
AGC
Band
Pass
Demodulator
OUT
2
PIN
Control Circuit
17170
Transmitter TSOPxxxx
with
TSALxxxx
Circuit
30 kΩ
VS
R1 = 100 Ω
VS
OUT
GND
+VS
C1 =
4.7 µF
µC
VO
GND
GND
R1 + C1 recommended to suppress power supply
disturbances.
The output voltage should not be hold continuously at
a voltage below VO = 2.0 V by the external circuit.
Document Number 82272
Rev. 1.1, 28-Feb-05
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1
TSOP344..SS1BS12
Vishay Semiconductors
Absolute Maximum Ratings
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Symbol
Value
Supply Voltage
Parameter
(Pin 3)
Test condition
VS
- 0.3 to + 6.0
V
Supply Current
(Pin 3)
IS
3
mA
Output Voltage
(Pin 1)
VO
- 0.3 to
(VS + 0.3)
V
Output Current
(Pin 1)
IO
10
mA
Tj
100
°C
Tstg
- 25 to + 85
°C
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Unit
Tamb
- 25 to + 85
°C
Power Consumption
(Tamb ≤ 85 °C)
Ptot
30
mW
Soldering Temperature
t ≤ 10 s, 1 mm from case
Tsd
260
°C
Electrical and Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Supply Current (Pin 3)
Symbol
Min
Typ.
Max
Ev = 0, VS = 3 V
Test condition
ISD
0.7
1.2
1.5
Ev = 40 klx, sunlight
ISH
Supply Voltage
VS
Transmission Distance
Ev = 0, test signal see fig.1,
IR diode TSAL6200,
IF = 250 mA
Output Voltage Low (Pin 1)
IOSL = 0.5 mA, Ee = 0.7 mW/m2,
test signal see fig. 1
VOSL
Minimum Irradiance
(30 - 40 kHz)
VS = 3 V
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig.1
Ee min
Minimum Irradiance (56 kHz)
VS = 3 V
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig.1
Minimum Irradiance
(30 - 40 kHz)
1.3
2.7
d
Unit
mA
mA
5.5
35
V
m
250
mV
0.2
0.4
mW/m2
Ee min
0.3
0.5
mW/m2
VS = 5 V
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig.1
Ee min
0.35
0.5
mW/m2
Minimum Irradiance (56 kHz)
VS = 5 V
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig.1
Ee min
0.45
0.6
mW/m2
Maximum Irradiance
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig. 1
Ee max
Directivity
Angle of half transmission
distance
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2
ϕ1/2
30
W/m2
± 45
deg
Document Number 82272
Rev. 1.1, 28-Feb-05
TSOP344..SS1BS12
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Optical Test Signal
(IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, T = 10 ms)
t
tpi *
T
* tpi w 10/fo is recommended for optimal function
VO
16110
Output Signal
1)
2)
VOH
7/f0 < td < 15/f0
tpi–5/f0 < tpo < tpi+6/f0
VOL
tpo2 )
td1 )
Ton ,Toff – Output Pulse Width ( ms )
Ee
t
1.0
0.9
0.8
0.6
0.5
0.3
0.1
0.0
0.1
1.0
10.0
100.0 1000.010000.0
Ee – Irradiance ( mW/m2 )
16909
Figure 4. Output Pulse Diagram
1.2
E e min / E e – Rel. Responsivity
Output Pulse
0.9
t po – Output Pulse Width ( ms )
l = 950 nm,
optical test signal, fig.3
0.2
1.0
0.8
Input Burst Duration
0.7
0.6
0.5
0.4
0.3
l = 950 nm,
optical test signal, fig.1
0.2
0.1
0.0
0.1
1.0
10.0
mW/m2
1.0
0.8
0.6
0.4
Figure 2. Pulse Length and Sensitivity in Dark Ambient
0.9
1.1
1.3
f/f0 – Relative Frequency
16925
)
f = f0"5%
Df ( 3dB ) = f0/10
0.2
0.0
0.7
100.0 1000.010000.0
Ee – Irradiance (
16908
Figure 5. Frequency Dependence of Responsivity
t
600 ms
T = 60 ms
94 8134
Output Signal, ( see Fig.4 )
VOH
VOL
Ton
Toff
Ee min– Threshold Irradiance ( mW/m 2 )
Optical Test Signal
600 ms
VO
Toff
0.4
Figure 1. Output Function
Ee
Ton
0.7
t
16911
Figure 3. Output Function
Document Number 82272
Rev. 1.1, 28-Feb-05
4.0
3.5
3.0
Correlation with ambient light sources:
10W/m2^1.4klx (Std.illum.A,T=2855K)
10W/m2^8.2klx (Daylight,T=5900K)
2.5
2.0
1.5
Ambient, l = 950 nm
1.0
0.5
0.0
0.01
0.10
1.00
10.00
100.00
E – Ambient DC Irradiance (W/m2)
Figure 6. Sensitivity in Bright Ambient
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3
TSOP344..SS1BS12
16912
2.0
f = fo
1.5
f = 10 kHz
1.0
f = 1 kHz
0.5
f = 100 Hz
0.0
0.1
1.0
10.0
100.0
1000.0
DVsRMS – AC Voltage on DC Supply Voltage (mV)
0.6
Ee min– Threshold Irradiance ( mW/m 2 )
Ee min– Threshold Irradiance ( mW/m 2 )
Vishay Semiconductors
0.5
0.4
0.3
0.2
0.1
16918
f(E) = f0
1.6
1.2
0.8
0.4
0.0
0.0
0.4
0.8
1.2
E – Field Strength of Disturbance ( kV/m )
94 8147
1.0
0.8
0.6
0.4
0.2
0.0
750
1050
1150
1.0
E e min – Sensitivity ( mW/m 2 )
Max. Envelope Duty Cycle
950
Figure 11. Relative Spectral Sensitivity vs. Wavelength
0.4
0.3
0.2
0.1
f = 38 kHz, Ee = 2 mW/m2
10
30
50
70
90
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
110
Burst Length ( number of cycles / burst )
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
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0.9
0.1
0.0
4
850
λ - Wavelength ( nm )
16919
Figure 8. Sensitivity vs. Electric Field Disturbances
16917
90
1.2
2.0
1.6
0.0
–30 –15 0
15 30 45 60 75
Tamb – Ambient Temperature ( qC )
Figure 10. Sensitivity vs. Ambient Temperature
S ( λ ) rel - Relative Spectral Sensitivity
E e min– Threshold Irradiance ( mW/m 2 )
Figure 7. Sensitivity vs. Supply Voltage Disturbances
2.0
Sensitivity in dark ambient
17185
VS – Supply Voltage ( V )
Figure 12. Sensitivity vs. Supply Voltage
Document Number 82272
Rev. 1.1, 28-Feb-05
TSOP344..SS1BS12
Vishay Semiconductors
0q
10q
20q
30q
• Signals from fluorescent lamps with electronic ballast with high or low modulation
(see Figure 14 or Figure 15).
40q
0.9
50q
0.8
60q
70q
0.7
80q
0.6
96 12223p2
IR Signal
1.0
0.6
0.4
0.2
0
0.2
0.4
drel – Relative Transmission Distance
IR Signal from fluorescent
lamp with low modulation
Figure 13. Directivity
0
5
16920
The circuit of the TSOP348..SS1BS12 is designed in
that way that unexpected output pulses due to noise
or disturbance signals are avoided. A bandpass filter,
an integrator stage and an automatic gain control are
used to suppress such disturbances.
The distinguishing mark between data signal and disturbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fulfill the following conditions:
• Carrier frequency should be close to center frequency of the bandpass (e.g. 38 kHz).
• Burst length should be 10 cycles/burst or longer.
• After each burst which is between 10 cycles and 35
cycles a gap time of at least 14 cycles is necessary.
• For each burst which is longer than 0.9 ms a corresponding gap time is necessary at some time in the
data stream. This gap time should be at least 7 times
longer than the burst.
• Up to 400 short bursts per second can be received
continuously.
Some examples for suitable data format are: NEC
Code, Toshiba Micom Format, Sharp Code, RC5
Code, R-2000 Code.
When a disturbance signal is applied to the
TSOP344..SS1BS12 it can still receive the data signal. However the sensitivity is reduced to that level
that no unexpected pulses will occur.
Some examples for such disturbance signals which
are suppressed by the TSOP344..SS1BS12 are:
• DC light (e.g. from tungsten bulb or sunlight)
• Continuous signal at 38 kHz or at any other frequency
Document Number 82272
Rev. 1.1, 28-Feb-05
15
20
Figure 14. IR Signal from Fluorescent Lamp with low Modulation
IR Signal from fluorescent
lamp with high modulation
IR Signal
Suitable Data Format
10
Time ( ms )
0
16921
5
10
15
20
Time ( ms )
Figure 15. IR Signal from Fluorescent Lamp with high Modulation
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TSOP344..SS1BS12
Vishay Semiconductors
Reel Dimensions
Labeling:
Reel
Barcode-label see 5.6.4
Kraft paper
Tape
Code 12
Adhesive tape
Tape direction
Quantity per
:
Reel
(Mat.-No.1764)
1000
Ammopack
(Mat.-No.1763)
1000
17029
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Document Number 82272
Rev. 1.1, 28-Feb-05
TSOP344..SS1BS12
Vishay Semiconductors
Package Dimensions in mm
16003
Document Number 82272
Rev. 1.1, 28-Feb-05
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7
TSOP344..SS1BS12
Vishay Semiconductors
Package Dimensions in mm
16003
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8
Document Number 82272
Rev. 1.1, 28-Feb-05
TSOP344..SS1BS12
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 82272
Rev. 1.1, 28-Feb-05
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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