ETC TSOP2233KU1

TSOP22..KU1
Vishay Semiconductors
Photo Modules for PCM Remote Control Systems
Available Types For Different Carrier Frequencies
Type
TSOP2230KU1
TSOP2236KU1
TSOP2238KU1
TSOP2256KU1
fo
30 kHz
36 kHz
38 kHz
56 kHz
Type
TSOP2233KU1
TSOP2237KU1
TSOP2240KU1
fo
33.0 kHz
36.7 kHz
40.0 kHz
Description
The TSOP22.. – series are miniaturized receivers for
infrared remote control systems. PIN diode and
preamplifier are assembled on lead frame, the epoxy
package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. The main benefit is the
reliable function even in disturbed ambient and the
protection against uncontrolled output pulses.
Features
16645
Special Features
Photo detector and preamplifier in one package
Internal filter for PCM frequency
Small size package
High immunity against disturbance light
TTL and CMOS compatibility
No occurrence of disturbance pulses at the output
Output active low
Improved shielding against electrical field
disturbance
Short settling time after power on (< 200µs)
Contiunous data transmission possible
( 800 bursts/s)
Suitable burst length 10 cycles/burst
Block Diagramm
2
Control
Circuit
Input
30 k
1
PIN
AGC
Band
Pass
VS
OUT
Demodulator
3
GND
16591
Document Number 82172
Rev. 1, 19–Nov–01
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TSOP22..KU1
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25°C
Parameter
Supply Voltage
Supply Current
Output Voltage
Output Current
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Power Consumption
Soldering Temperature
Test Conditions
Symbol
VS
IS
VO
IO
Tj
Tstg
Tamb
Ptot
Tsd
(Pin 2)
(Pin 2)
(Pin 1)
(Pin 1)
(Tamb 85 °C)
t 10 s, 1 mm from case
Value
–0.3...6.0
5
–0.3...6.0
5
100
–25...+85
–25...+85
50
260
Unit
V
mA
V
mA
°C
°C
°C
mW
°C
Basic Characteristics
Tamb = 25°C
Parameter
Supply
Su
ly Current (Pin 2)
Test Conditions
VS = 5 V, Ev = 0
VS = 5 V, Ev = 40 klx, sunlight
Symbol Min.
ISD
0.8
ISH
VS
4.5
d
Supply Voltage (Pin 2)
Transmission Distance
Ev = 0, test signal see fig.7,
IR diode TSAL6200, IF = 250 mA
Output Voltage Low (Pin 1) IOL = 0.5 mA,Ee = 0.7 mW/m2, f = fo
Irradiance (30 – 40 kHz)
Pulse width tolerance:
tpi – 5/fo < tpo < tpi + 6/fo,
test signal see fig.7
Irradiance (56 kHz)
Pulse width tolerance:
tpi –5/fo < tpo < tpi +6/fo,
test signal see fig.7
Irradiance
Directivity
Angle of half transmission distance
Typ.
1.1
1.4
Max.
1.5
5.5
35
Unit
mA
mA
V
m
VOL
Ee min
0.2
250
0.4
mV
mW/m 2
Ee min
0.3
0.5
mW/m 2
Ee max
ϕ1/2
W/m 2
deg
30
±45
Application Circuit
100 *)
2
TSOP22..KU1
TSAL62..
4.7 F *)
+5V
>10 k
optional
1
C
**)
3
16610
GND
*) recommended to suppress power supply disturbances
**) The output voltage should not be hold continuously at a voltage below 3.3 V by the external circuit.
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Document Number 82172
Rev. 1, 19–Nov–01
TSOP22..KU1
Vishay Semiconductors
Suitable Data Format
The circuit of the TSOP22..KU1 is designed in that
way that unexpected output pulses due to noise or
disturbance signals are avoided. A bandpassfilter, an
integrator stage and an automatic gain control are
used to suppress such disturbances.
The distinguishing mark between data signal and
disturbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fullfill the following condition:
• Carrier frequency should be close to center
frequency of the bandpass (e.g. 38 kHz).
• Burst length should be 10 cycles/burst or longer.
• After each burst which is between 10 cycles and
70 cycles a gap time of at least 14 cycles is
neccessary.
• For each burst which is longer than 1.8 ms a
corresponding gap time is necessary at some
time in the data stream. This gap time should be at
least 4 times longer than the burst.
• Up to 800 short bursts per second can be
received continuously.
0
5
Some examples for suitable data format are:
NEC Code, Toshiba Micom Format, Sharp Code,
RC5 Code, RC6 Code, R–2000 Code.
When a disturbance signal is applied to the
TSOP22..KU1 it can still receive the data signal.
However the sensitivity is reduced to that level that no
unexpected pulses will occure.
Some examples for such disturbance signals which
are suppressed by the TSOP22..KU1 are:
• DC light (e.g. from tungsten bulb or sunlight)
• Continuous signal at 38 kHz or at any other
frequency
• Signals from fluorescent lamps with electronic
ballast with low modulation
(see Figure A or Figure B).
10
15
20
time [ms]
Figure A: IR Signal from Fluorescent Lamp with low Modulation
0
5
10
15
20
time [s]
Figure B: IR Signal from Fluorescent Lamp with high Modulation
Document Number 82172
Rev. 1, 19–Nov–01
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TSOP22..KU1
Vishay Semiconductors
Typical Characteristics (Tamb = 25C, unless otherwise specified)
Ee min – Threshold Irradiance ( mW/m2 )
eE
min
/e E – Rel. Responsitivity
1.0
0.8
0.6
0.4
0.2
f = f05%
f ( 3dB ) = f0/10
2.0
f(E)=f0
1.6
1.2
0.8
0.4
0.0
0.0
0.7
0.8
0.9
1.0
1.1
1.3
1.2
f/f0 – Relative Frequency
94 8143
Figure 1. Frequency Dependence of Responsivity
tpo – Output Pulse Length (ms)
0.9
0.8
Input burst duration
0.6
0.5
= 950 nm,
optical test signal, fig.7
0.4
0.3
0.2
0.1
1.0
10.0
1 kHz
10 kHz
1
100 Hz
Correlation with ambient light sources
(Disturbanceeffect):10W/m21.4klx
(Stand.illum.A,T=2855K)8.2klx
(Daylight,T=5900K)
4.5
4.0
3.5
3.0
2.5
2.0
Ambient, = 950 nm
1.5
1.0
0.5
0.0
0.01
96 12111
0.10
1.00
10.00
E – DC Irradiance (W/m2)
100.00
Figure 3. Sensitivity in Bright Ambient
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0.1
0.01
0.1
1
10
100
1000
VsRMS – AC Voltage on DC Supply Voltage (mV)
Figure 5. Sensitivity vs. Supply Voltage Disturbances
E e min – Threshold Irradiance (mW/m2 )
E e min – Threshold Irradiance (mW/m2 )
5.0
2.0
1.6
f = f0
94 9106
Figure 2. Sensitivity in Dark Ambient
1.2
10
100.0 1000.0 10000.0
Ee – Irradiance ( mW/m2 )
96 12110
0.8
Figure 4. Sensitivity vs. Electric Field Disturbances
0.0
0.1
0.4
E – Field Strength of Disturbance ( kV/m )
Ee min – Threshold Irradiance ( mW/m2 )
1.0
0.7
0.0
94 8147
1.0
0.9
0.8
Sensitivity in dark ambient
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
–30 –15 0
15 30 45 60 75
96 12112
Tamb – Ambient Temperature ( °C )
90
Figure 6. Sensitivity vs. Ambient Temperature
Document Number 82172
Rev. 1, 19–Nov–01
TSOP22..KU1
Vishay Semiconductors
Optical Test Signal
(IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, T = 10 ms)
t
tpi *
T
* tpi 10/fo is recommended for optimal function
Output Signal
VO
1)
2)
VOH
16110
7/f0 < td < 15/f0
tpo = tpi 6/f0
1.0
Ton ,Toff – Output Pulse Length (ms)
Ee
0.9
0.8
Ton
0.7
0.6
0.5
Toff
0.4
0.3
= 950 nm,
optical test signal, fig.8
0.2
0.1
0.0
0.1
VOL
td1 )
t
tpo2 )
100.0 1000.0 10000.0
t
600 s
T = 60 ms
94 8134
Output Signal, ( see Fig.10 )
VOH
VOL
Ton
S ( )rel – Relative Spectral Sensitivity
Optical Test Signal
600 s
VO
10.0
Figure 10. Output Pulse Diagram
Figure 7. Output Function
Ee
1.0
Ee – Irradiance (mW/m2)
96 12114
1.0
0.8
0.6
0.4
0.2
0
750
t
Toff
1.2
950
1150
1050
– Wavelength ( nm )
94 8408
Figure 8. Output Function
850
Figure 11. Relative Spectral Sensitivity vs. Wavelength
0°
10°
20°
30°
0.8
f = 38 kHz
Envelope Duty Cycle
0.7
0.6
40°
0.5
1.0
0.4
0.9
50°
0.3
0.8
60°
0.2
70°
0.7
80°
0.1
0.0
10
16156
20 30 40 50 60 70 80
Burstlength [number of cycles/burst]
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
Document Number 82172
Rev. 1, 19–Nov–01
0.6
90
96 12223p2
0.6
0.4
0.2
0
0.2
0.4
drel – Relative Transmission Distance
Figure 12. Directivity
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TSOP22..KU1
Vishay Semiconductors
Dimensions in mm
16586
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Document Number 82172
Rev. 1, 19–Nov–01
TSOP22..KU1
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their
use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs
listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances
and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 82172
Rev. 1, 19–Nov–01
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