MJD5731 High Voltage PNP Silicon Power Transistors D e s i g n e d f o r l i n e o p e r a t e d a u d i o o u t p u t a m p l i f i e r, SWITCHMODE t power supply drivers and other switching applications. http://onsemi.com Features • • • • • • 350 V (Min) − VCEO(sus) 1.0 A Rated Collector Current PNP Complements to the MJD47 thru MJD50 Series Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V These are Pb−Free Packages SILICON POWER TRANSISTORS 1.0 AMPERE 350 VOLTS, 15 WATTS 4 1 2 MAXIMUM RATINGS Rating Symbol Max Unit VCEO 350 Vdc VEB 5 Vdc IC 1.0 3.0 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 15 0.12 W W/°C Total Power Dissipation (Note 1) @ TA = 25°C Derate above 25°C PD Unclamped Inductive Load Energy (See Figure 10) Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous − Peak E 20 mJ TJ, Tstg −55 to +150 °C Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 8.33 °C/W Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 80 °C/W TL 260 °C THERMAL CHARACTERISTICS Lead Temperature for Soldering Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. © Semiconductor Components Industries, LLC, 2011 January, 2011 − Rev. 4 AYWW J 5731G W W/°C Characteristic DPAK CASE 369C STYLE 1 MARKING DIAGRAM 1.56 0.0125 Operating and Storage Junction Temperature Range 3 1 A Y WW J5731 G = Assembly Location = Year = Work Week = Device Code = Pb−Free Package ORDERING INFORMATION Device Package Shipping† MJD5731T4G DPAK (Pb−Free) 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MJD5731/D MJD5731 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 350 − Vdc Collector Cutoff Current (VCE = 250 Vdc, IB = 0) ICEO − 0.1 mAdc Collector Cutoff Current (VCE = 350 Vdc, VBE = 0) ICES − 0.01 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 0.5 mAdc 30 10 175 − − OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 2) (IC = 30 mAdc, IB = 0) ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.3 Adc, VCE = 10 Vdc) (IC = 1.0 Adc, VCE = 10 Vdc) hFE Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc) VCE(sat) − 1.0 Vdc Base−Emitter On Voltage (IC = 1.0 Adc, VCE = 10 Vdc) VBE(on) − 1.5 Vdc Current Gain − Bandwidth Product (IC = 0.2 Adc, VCE = 10 Vdc, f = 2.0 MHz) fT 10 − MHz Small−Signal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 25 − − DYNAMIC CHARACTERISTICS 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 hFE , DC CURRENT GAIN VCE = 10 V 100 TJ = 150°C 50 25°C 30 -55°C 20 10 5.0 3.0 2.0 0.02 0.03 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMPS) 1.0 2.0 Figure 1. DC Current Gain 1.4 1.2 1 TJ = 25°C 0.8 0.6 -55°C 0.4 150°C 0.2 VCE(sat)) @ IC/IB = 5.0 0 0.02 0.03 0.05 0.1 0.5 0.2 0.3 IC, COLLECTOR CURRENT (AMPS) 1.0 Figure 2. Collector−Emitter Saturation Voltage http://onsemi.com 2 2.0 MJD5731 1.4 1.2 1.2 V, VOLTAGE (VOLTS) 1.4 TJ = - 55°C 1.0 V, VOLTAGE (V) VBE(sat) @ IC/IB = 5.0 0.8 25°C 0.6 150°C 1 VBE(sat) @ IC/IB = 5 V 0.8 0.4 0.4 0.2 0.2 0 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 0 0.02 2.0 VBE(on) @ VCE = 4 V 0.6 IC, COLLECTOR CURRENT (AMPS) TJ = 25°C VCE(sat) @ IC/IB = 5 V 0.1 0.2 0.4 0.6 0.04 0.06 IC, COLLECTOR CURRENT (AMPS) Figure 3. Base−Emitter Voltage There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150°C. TJ(pk) may be calculated from the data in Figure 6. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 10 IC, COLLECTOR CURRENT (AMP) 100 ms 1.0ms 1.0 500 ms dc TC = 25°C 0.5 0.2 0.1 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 0.05 0.02 0.01 5.0 2 Figure 4. “On” Voltages 5.0 2.0 1 100 50 200 300 10 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 5. Forward Bias Safe Operating Area 1 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.07 0.05 0.03 0.1 RqJC(t) = r(t) RqJC RqJC = 8.33°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.05 0.02 0.01 SINGLE PULSE 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 t, TIME (ms) 10 Figure 6. Thermal Response http://onsemi.com 3 20 30 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 300 500 1k MJD5731 TURN-ON PULSE t1 VBE(off) 0V Vin VCC AP PROX. -11 V RC SCOPE t1 ≤ 7.0 ns 100 ≤ t2 < 500 ms t3 < 15 ns RB Vin t3 t2 Cjd << Ceb 51 +4.0 V APPROX. +9.0 V DUTY CYCLE ≈ 2.0% TURN-OFF PULSE Figure 7. Switching Time Equivalent Circuit 5.0 1.0 0.2 2.0 tf td t, TIME (s) μ t, TIME (s) μ 0.3 TJ = 25°C VCC = 200 V IC/IB = 5.0 ts 3.0 TJ = 25°C VCC = 200 V IC/IB = 5.0 tr 0.5 0.1 0.05 1.0 0.5 0.3 0.2 0.03 0.1 0.02 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMPS) 1.0 0.05 0.02 0.03 2.0 Figure 8. Turn−On Resistive Switching Times 0.05 Voltage and Current Waveforms VCE MONITOR RBB1 = 150 W INPUT VOLTAGE TUT 100 mH + 50 INPUT 50 + VBB1 = 10 V - RBB2 = 100 W VBB2 = 0 1.0 Figure 9. Resistive Turn−Off Switching Times Test Circuit MJE171 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMPS) 0V tw ≈ 3 ms (SEE NOTE 1) -5 V 100 ms VCC = 20 V IC MONITOR 0.63 A COLLECTOR CURRENT 0 V RS = 0.1 W VCER COLLECTOR VOLTAGE 10 V VCE(sat) Figure 10. Inductive Load Switching http://onsemi.com 4 2.0 MJD5731 PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW 2.58 0.101 5.80 0.228 3.0 0.118 1.6 0.063 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* 6.20 0.244 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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