BD241C (NPN), BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON 3 AMP 80−100 VOLTS 40 WATTS Features • Collector−Emitter Saturation Voltage − VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) BD241C, BD242C • High Current Gain − Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc • Compact TO−220 AB Package • Epoxy Meets UL94 V−0 @ 0.125 in • ESD Ratings: Human Body Model, 3B u 8000 V MARKING DIAGRAM Machine Model, C u 400 V ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ • Pb−Free Packages are Available* TO−220AB CASE 221A−09 STYLE 1 MAXIMUM RATINGS Symbol BD242B BD241C BD242C Unit Collector−Emitter Voltage VCEO 80 100 Vdc Collector−Emitter Voltage VCES 90 115 Vdc Emitter−Base Voltage VEB Collector Current Continuous Peak IC Base Current IB 1.0 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 40 W 0.32 W/°C – 65 to + 150 °C Rating Operating and Storage Junction Temperature Range TJ, Tstg 5.0 1 2 3 BD24xx = Device Code xx = 1C, 2B, or 2C A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package Vdc Adc 3.0 5.0 THERMAL CHARACTERISTICS AYWW BD24xxG ORDERING INFORMATION Device Package Shipping BD241C TO−220AB 50 Units/Rail BD241CG TO−220AB (Pb−Free) 50 Units/Rail Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 62.5 °C/W BD242B TO−220AB 50 Units/Rail Thermal Resistance, Junction−to−Case RqJC 3.125 °C/W BD242BG TO−220AB (Pb−Free) 50 Units/Rail BD242C TO−220AB 50 Units/Rail BD242CG TO−220AB (Pb−Free) 50 Units/Rail Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2011 October, 2011 − Rev. 8 1 Publication Order Number: BD241C/D BD241C (NPN), BD242B (PNP), BD242C (PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) VCEO BD242B BD241C, BD242C Collector Cutoff Current (VCE = 50 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) BD242B BD241C, BD242C Collector Cutoff Current (VCE = 80 Vdc, VEB = 0) (VCE = 100 Vdc, VEB = 0) BD242B BD241C, BD242C Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Vdc 80 100 ICEO 0.3 mAdc ICES 200 mAdc IEBO 1.0 mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc) hFE 25 10 Collector−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.6 Adc) VCE(sat) 1.2 Vdc Base−Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc) VBE(on) 1.8 Vdc DYNAMIC CHARACTERISTICS Current Gain − Bandwidth Product (Note 2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT 3.0 Small−Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 2. fT = |hfe| • ftest. PD, POWER DISSIPATION (WATTS) 40 30 20 10 0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) Figure 1. Power Derating http://onsemi.com 2 140 160 MHz BD241C (NPN), BD242B (PNP), BD242C (PNP) 2.0 VCC TURN‐ON PULSE APPROX + 11 V Vin RL 0.7 0.5 SCOPE RK t1 t3 APPROX + 11 V t, TIME (s) μ Cjd%Ceb Vin 0 VEB(off) - 4.0 V t1 v 7.0 ns 100 t t2 t 500 ms t3 t 15 ns tr @ VCC = 30 V 0.3 tr @ VCC = 10 V 0.1 td @ VBE(off) = 2.0 V 0.07 0.05 Vin t2 TURN‐OFF PULSE IC/IB = 10 TJ = 25°C 1.0 0.03 0.02 0.03 DUTY CYCLE [ 2.0% APPROX - 9.0 V 0.05 0.07 0.1 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 2. Switching Time Equivalent Circuit 1.0 0.7 0.5 3.0 Figure 3. Turn−On Time D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 P(pk) ZqJC (t) = r(t) RqJC RqJC = 3.125°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 0.05 0.02 0.03 0.02 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 50 t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 4. Thermal Response There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150°C, TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 10 5.0 1.0 ms 5.0 ms 100 ms 2.0 1.0 0.5 0.2 0.1 5.0 SECOND BREAKDOWN LIMITED @ TJ v 150°C THERMAL LIMITATION @ TC = 25°C BONDING WIRE LIMITED CURVES APPLY BELOW RATED VCEO BD241C, BD242C 10 20 50 IC, COLLECTOR CURRENT (AMP) 100 Figure 5. Active Region Safe Operating Area http://onsemi.com 3 BD241C (NPN), BD242B (PNP), BD242C (PNP) 3.0 2.0 0.3 0.2 ts′ tf @ VCC = 30 V TJ = + 25°C 200 CAPACITANCE (pF) t, TIME (s) μ 1.0 0.7 0.5 300 IB1 = IB2 IC/IB = 10 ts′ = ts - 1/8 tf TJ = 25°C tf @ VCC = 10 V 0.1 100 Ceb 70 50 0.07 0.05 0.03 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 30 0.1 2.0 3.0 Ccb 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Turn−Off Time VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Capacitance 500 hFE, DC CURRENT GAIN 300 100 70 VCE = 2.0 V TJ = 150°C 25°C -55°C 50 30 10 7.0 5.0 0.03 0.05 0.07 0.1 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 3.0 2.0 TJ = 25°C 1.6 1.2 IC = 0.3 A θV, TEMPERATURE COEFFICIENTS (mV/°C) V, VOLTAGE (VOLTS) TJ = 25°C 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 2.0 V 0.4 VCE(sat) @ IC/IB = 10 0 0.003 0.005 0.01 0.020.03 0.05 0.1 0.2 0.3 0.5 3.0 A 0.4 0 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (mA) 500 1000 Figure 9. Collector Saturation Region 1.4 0.2 1.0 A 0.8 Figure 8. DC Current Gain 1.2 20 30 40 1.0 2.0 3.0 +2.5 +2.0 +1.5 *APPLIES FOR IC/IB ≤ 5.0 TJ = - 65°C TO + 150°C +1.0 +0.5 *qVC FOR VCE(sat) 0 -0.5 -1.0 -1.5 qVB FOR VBE -2.0 -2.5 0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMP) Figure 10. “On” Voltages Figure 11. Temperature Coefficients http://onsemi.com 4 RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHM BD241C (NPN), BD242B (PNP), BD242C (PNP) IC, COLLECTOR CURRENT (A) μ 103 102 VCE = 30 V 101 TJ = 150°C 100 100°C 10-1 REVERSE 10-2 FORWARD 25°C 10-3 -0.4 -0.3 -0.2 -0.1 ICES 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6 107 VCE = 30 V IC = 10 x ICES 106 105 IC ≈ ICES IC = 2 x ICES 104 103 102 (TYPICAL ICES VALUES OBTAINED FROM FIGURE 12) 20 40 60 80 100 120 140 160 VBE, BASE-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 12. Collector Cut−Off Region Figure 13. Effects of Base−Emitter Resistance http://onsemi.com 5 BD241C (NPN), BD242B (PNP), BD242C (PNP) PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AG −T− B F SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.036 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.91 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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