SiHG30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss) • Reduced Switching and Conduction Losses • Ultra Low Gate Charge (Qg) • Avalanche Energy Rated (UIS) • Compliant to RoHS Directive 2002/95/EC 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single D APPLICATIONS TO-247AC • • • • Server and Telecom Power Supplies Switch Mode Power Supplies (SMPS) Power Factor Correction Power Supplies (PFC) Lighting - High-Intensity Discharge (HID) - Fluorescent Ballast Lighting - LED Lighting • Industrial - Welding - Induction Heating - Motor Drives • Battery Chargers • Renewable Energy - Solar (PV Inverters) G S S D G N-Channel MOSFET ORDERING INFORMATION Package TO-247AC Lead (Pb)-free and Halogen-free SiHG30N60E-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage LIMIT VDS 600 VGS Gate-Source Voltage AC (f > 1 Hz) Continuous Drain Current (TJ = 150 °C) SYMBOL VGS at 10 V TC = 25 °C TC = 100 °C Currenta ID ± 20 UNIT V 30 29 A 18 IDM 65 Avalanche Energy (repetitive) EAR 0.25 Single Pulse Avalanche Energyb EAS 690 Maximum Power Dissipation PD 250 W TJ, Tstg - 55 to + 150 °C Pulsed Drain Linear Derating Factor 2 Operating Junction and Storage Temperature Range Drain-Source Voltage Slope TJ = 125 °C Reverse Diode dV/dtd Soldering Recommendations (Peak Temperature) for 10 s dV/dt W/°C 37 mJ V/ns 18 300c °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 7 A. c. 1.6 mm from case. d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C. S11-2091 Rev. C, 31-Oct-11 1 Document Number: 91455 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG30N60E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Maximum Junction-to-Case (Drain) RthJC - 0.5 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage (N) Gate-Source Leakage Zero Gate Voltage Drain Current VDS VGS = 0 V, ID = 250 μA 600 - - V VDS/TJ Reference to 25 °C, ID = 250 μA - 0.64 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V nA VGS = ± 20 V - - ± 100 VDS = 600 V, VGS = 0 V - - 1 VDS = 600 V, VGS = 0 V, TJ = 150 °C - - 100 IGSS IDSS μA - 0.104 0.125 gfs VDS = 8 V, ID = 3 A - 5.4 - S Input Capacitance Ciss 2600 - Coss - 138 - Reverse Transfer Capacitance Crss VGS = 0 V, VDS = 100 V, f = 1.0 MHz - Output Capacitance Total Gate Charge Qg Drain-Source On-State Resistance Forward Transconductancea RDS(on) VGS = 10 V ID = 15 A Dynamic VGS = 10 V 3 - 85 130 - 15 - - 39 - Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) - 19 40 tr - 32 65 - 63 95 - 36 75 - 0.63 - - - 29 - - 65 - - 1.3 V - 402 605 ns Rise Time Turn-Off Delay Time VDD = 380 V, ID = 15 A, VGS = 10 V, Rg = 4.7 td(off) Fall Time tf Gate Input Resistance Rg ID = 15 A, VDS = 480 V - pF f = 1 MHz, open drain nC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Current ISM Diode Forward Voltage VSD Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Current MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 15 A, VGS = 0 V trr Qrr TJ = 25 °C, IF = IS = 15 A, dI/dt = 100 A/μs, VR = 20 V IRRM - 7 15 μC - 32 65 A The information shown here is a preliminary product proposal, not a commercial product datasheet. Vishay Siliconix is not committed to produce this or any similar product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products. S11-2091 Rev. C, 31-Oct-11 2 Document Number: 91455 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG30N60E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 80 80 TOP 15 V 14 V 13 V 12 V 11 V 10 V 9.0 V 8.0 V 7.0 V 6.0 V BOTTOM 5.0 V ID - Drain Current (A) 60 TJ = 25 °C 50 40 TJ = 25 °C 60 ID, Drain Current (A) 70 30 20 TJ = 150 °C 40 20 5V 10 0 0 0 5 10 15 20 25 0 30 5 15 20 25 VGS, Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics 50 3.0 ID = 15 A 2.5 40 TOP 15 V 14 V 13 V 12 V 11 V 10 V 9.0 V 8.0 V 7.0 V 6.0 V BOTTOM 5.0 V 30 20 RDS(on) - On-Resistance (Normalized) ID - Drain Current (A) 10 10 VGS = 10 V 2.0 1.5 1.0 0.5 TJ = 150 °C 0.0 0 0 5 10 15 20 25 - 60 - 40 - 20 30 20 40 60 80 100 120 140 160 TJ - Junction Temperature (°C) VDS - Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics, TC = 150 °C S11-2091 Rev. C, 31-Oct-11 0 Fig. 4 - Normalized On-Resistance vs. Temperature 3 Document Number: 91455 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG30N60E www.vishay.com Vishay Siliconix 1000 10 000 Ciss Operation in this area limited by RDS(on)* VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd x Cds shorted Crss = Cgd Coss = Cds + Cgd 100 ID, Drain Current (A) C - Capacitance (pF) 1000 100 Coss 10 100 µs 1 10 1 ms TC = 25 °C TJ = 150 °C Single Pulse 10 ms Crss 0.1 1 0 100 200 300 400 500 600 1000 Fig. 8 - Maximum Safe Operating Area 30.0 24 VDS = 300 V ID = 15 A 25.0 20 ID, Drain Current (A) VDS = 120 V 16 VDS = 480 V 12 8 20.0 15.0 10.0 5.0 4 0 0 0 25 50 75 100 125 25 150 50 75 125 150 Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage 725 100 VDS, Drain-to-Source Breakdown Voltage (V) 1000 TJ = 150 °C 10 1 TJ = 25 °C 0.1 0.01 0.001 0.0 100 TC - Temperature (°C) Qg - Total Gate Charge (nC) IS - Source Current (A) 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage VGS - Gate-to-Source Voltage (V) 10 1 VDS - Drain-to-Source Voltage (V) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 675 650 625 600 575 550 - 60 - 40 - 20 1.6 VSD - Source-to-Drain Voltage (V) 0 20 40 60 80 100 120 140 160 TJ - Temperature (°C) Fig. 7 - Typical Source-Drain Diode Forward Voltage S11-2091 Rev. C, 31-Oct-11 700 Fig. 10 - Temperature vs. Drain-to-Source Voltage 4 Document Number: 91455 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG30N60E www.vishay.com Vishay Siliconix Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case VGS VDS RD VDS tp VDD D.U.T. RG + - VDD VDS 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % IAS Fig. 15 - Unclamped Inductive Waveforms Fig. 12 - Switching Time Test Circuit VDS 90 % QG 10 V QGS 10 % VGS QGD VG td(on) td(off) tf tr Fig. 13 - Switching Time Waveforms Charge Fig. 16 - Basic Gate Charge Waveform L Vary tp to obtain required IAS VDS Current regulator Same type as D.U.T. D.U.T RG + - IAS V DD 50 kΩ 12 V 0.2 µF 0.3 µF 10 V tp + 0.01 Ω D.U.T. - VDS VGS Fig. 14 - Unclamped Inductive Test Circuit 3 mA IG ID Current sampling resistors Fig. 17 - Gate Charge Test Circuit S11-2091 Rev. C, 31-Oct-11 5 Document Number: 91455 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG30N60E www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop ISD Ripple ≤ 5 % Note a. VGS = 5 V for logic level devices Fig. 18 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91455. S11-2091 Rev. C, 31-Oct-11 6 Document Number: 91455 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix TO-247AC (HIGH VOLTAGE) A A 4 E B 3 R/2 E/2 7 ØP Ø k M DBM A2 S (Datum B) ØP1 A D2 Q 5 2xR (2) D1 D 1 2 4 D 3 Thermal pad 5 L1 C L See view B 2 x b2 3xb 0.10 M C A M 5 E1 A 0.01 M D B M View A - A C 2x e A1 b4 (b1, b3, b5) Planting D DE Base metal E C (c) C c1 (b, b2, b4) (4) Section C - C, D - D, E - E View B MILLIMETERS DIM. MIN. MAX. INCHES MIN. MILLIMETERS MAX. DIM. MIN. INCHES MAX. MIN. MAX. A 4.65 5.31 0.183 0.209 D2 0.51 1.30 0.020 0.051 A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 A2 1.50 2.49 0.059 0.098 E1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 BSC b1 0.99 1.35 0.039 0.053 Øk b2 1.65 2.39 0.065 0.094 L 14.20 16.10 b3 1.65 2.37 0.065 0.093 L1 3.71 4.29 b4 2.59 3.43 0.102 0.135 N 0.215 BSC 0.254 0.010 7.62 BSC 0.559 0.634 0.146 0.169 0.300 BSC b5 2.59 3.38 0.102 0.133 ØP 3.56 3.66 0.140 0.144 c 0.38 0.86 0.015 0.034 Ø P1 - 7.39 - 0.291 c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224 D 19.71 20.70 0.776 0.815 R 4.52 5.49 0.178 0.216 D1 13.08 - 0.515 - S 5.51 BSC 0.217 BSC ECN: S-81920-Rev. A, 15-Sep-08 DWG: 5971 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Contour of slot optional. 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body. 4. Thermal pad contour optional with dimensions D1 and E1. 5. Lead finish uncontrolled in L1. 6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154"). 7. Outline conforms to JEDEC outline TO-247 with exception of dimension c. Document Number: 91360 Revision: 15-Sep-08 www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1