SPICE MODEL: SBM340 SBM340 3A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER POWERMITEâ3 Features · Guard Ring Die Construction for Transient Protection · · · Low Power Loss, High Efficiency For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications P · Lead Free Finish/RoHS Compliant (Note 2) 3 Low Forward Voltage Drop POWERMITEâ3 E A G Dim Min Max A 4.03 4.09 B 6.40 6.61 .889 NOM C Mechanical Data H J B 1.83 NOM D 1.10 E · · Case: POWERMITEâ3 · · · · · · Moisture sensitivity: Level 1 per J-STD-020C 1 Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish). e3 M D C Polarity: See Diagram PIN 1 Marking: Type Number PIN 2 Weight: 0.072 grams (approximate) Maximum Ratings K C Note: .178 NOM G 2 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 H 5.01 5.17 J 4.37 4.43 .178 NOM K L .71 L PIN 3, BOTTOMSIDE HEAT SINK Pins 1 & 2 must be electrically connected at the printed circuit board. 1.14 .77 M .36 .46 P 1.73 1.83 All Dimensions in mm @ TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbol Value Unit VRRM VRWM VR 40 V VR(RMS) 28 V IO 3 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave Superimposed on Rated Load @ TC = 100°C IFSM 50 A Typical Thermal Resistance Junction to Soldering Point RqJS 3.4 °C/W Tj -55 to +125 °C TSTG -55 to +150 °C Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (See also Figure 5) Operating Temperature Range Storage Temperature Range Electrical Characteristics @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit V(BR)R 40 ¾ ¾ V IR = 0.5mA Forward Voltage VFM ¾ 0.46 0.40 0.57 0.54 0.50 0.44 0.61 0.58 V IF = 3A, Tj = 25°C IF = 3A, Tj = 125°C IF = 6A, Tj = 25°C IF = 6A, Tj = 125°C Reverse Current (Note 1) IRM ¾ 15 ¾ 500 20 mA mA Tj = 25°C, VR = 40V Tj = 100°C, VR = 40V Total Capacitance CT ¾ 180 ¾ pF f = 1.0MHz, VR = 4.0V DC Characteristic Reverse Breakdown Voltage (Note 1) Notes: Test Condition 1. Short duration test pulse used to minimize self-heating effect. 2. RoHS revision 13.2.2003. High Temperature Solder Exemption Applied, see EU Directive Annex Note 7. DS30362 Rev. 5- 2 1 of 3 www.diodes.com SBM340 ã Diodes Incorporated IF, INSTANTANEOUS FORWARD CURRENT (A) 10 10,000 TJ = +125°C TJ = +75°C 100 TJ = +75°C TJ = +25°C 1.0 10 TJ = -25°C TJ = +25°C 1 0.1 TJ = -25°C 0.1 0.01 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 10 0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Typical Forward Characteristics 20 30 40 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 2 Typical Reverse Characteristics 1000 50 f = 1 MHz TJ = 25°C Single Half-Sine-Wave 40 CT, TOTAL CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) TJ = +125°C 1000 TC = 100°C 30 20 10 100 10 0 1 10 100 NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Peak Forward Surge Current DS30362 Rev. 5 - 2 2 of 3 www.diodes.com 0.1 1 10 100 VR, DC REVERSE VOLTAGE (V) Fig. 4 Typical Capacitance vs. Reverse Voltage SBM340 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) IF, DC FORWARD CURRENT (A) 4 3.5 Note 3 3 2.5 Note 4 2 1.5 Note 5 1 0.5 0 25 125 75 100 50 TA, AMBIENT TEMPERATURE (°C) Fig. 5 DC Forward Current Derating Ordering Information Notes: 150 4 Note 4 3 2 1 Note 5 0 0 1 2 3 4 5 6 7 IF(AV), AVERAGE FORWARD CURRENT (A) Fig. 6 Forward Power Dissipation (Note 6) Device Packaging Shipping SBM340-13-F POWERMITEâ3 5000/Tape & Reel 3. TA = TSOLDERING POINT, RqJS = 3.4°C/W, RqSA = 0°C/W. 4. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad dimensions 0.25” x 1.0”. RqJA in range of 20-40°C/W. 5. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of 95-115°C/W. 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information SBM340 YYWW(K) SBM340 = Product type marking code = Manufacturers’ code marking YYWW = Date code marking YY = Last digit of year ex: 02 for 2002 WW = Week code 01 to 52 (K) = Factory Designator POWERMITE is a registered trademark of Microsemi Corporation. IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30362 Rev. 5- 2 3 of 3 www.diodes.com SBM340