Order this document by MJW21192/D SEMICONDUCTOR TECHNICAL DATA Specifically designed for power audio output, or high power drivers in audio amplifiers. • • • • DC Current Gain Specified up to 8.0 Amperes at Temperature All On Characteristics at Temperature High SOA: 20 A, 18 V, 100 ms TO–247AE Package 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 150 VOLTS 100 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Rating MJW21191 MJW21192 Unit VCEO VCB 150 Vdc 150 Vdc VEB IC 5.0 Vdc 8.0 16 Adc Symbol Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous — Peak Base Current IB PD 2.0 Adc 100 0.65 Watts W/_C TJ, Tstg – 65 to + 150 _C Symbol Max Unit Thermal Resistance, Junction to Case RθJC 0.65 _C/W Thermal Resistance, Junction to Ambient RθJA 50 _C/W Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic CASE 340K–01 TO–247AE 1000 C, CAPACITANCE (pF) PNP NPN 100 10 1.0 1.0 10 100 1000 VR, REVERSE VOLTAGE (V) Figure 1. Typical Capacitance @ 25°C Motorola, Inc. 1997 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ v v ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 150 — — 10 — 10 15 5.0 — — — — 1.0 2.0 Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 10 mAdc, IB = 0) VCEO(sus) Collector Cutoff Current (VCB = 250 Vdc, IE = 0) ICES Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO Vdc µAdc µAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 4.0 Adc, VCE = 2.0 Vdc) (IC = 8.0 Adc, VCE = 2.0 Vdc) hFE — 100 Collector–Emitter Saturation Voltage (IC = 4.0 Adc, IB = 0.4 Adc) (IC = 8.0 Adc, IB = 1.6 Adc) VCE(sat) Vdc Base–Emitter On Voltage (IC = 4.0 Adc, VCE = 2.0 Vdc) VBE(on) — 2.0 Vdc fT 4.0 — MHz DYNAMIC CHARACTERISTICS Current Gain — Bandwidth Product (2) (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz) (1) Pulse Test: Pulse Width (2) fT = hfe• ftest. 300 µs, Duty Cycle 2.0%. 1.0 DUTY CYCLE, P(pk) D = t1/t2 TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.1 t1 0.1 ZθJC(t) = r(t) RθJC RθJC = 1.65°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) ZθJC(t) 0.05 0.02 0.01 0.01 0.00001 t2 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 10 100 1000 Figure 2. Thermal Response 2 Motorola Bipolar Power Transistor Device Data There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation then the curves indicate. The data of Figures 3 and 4 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 150_C. T J(pk) may be calculated from the data in Figure 2. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. NPN — MJW21192 PNP — MJW21191 100 IC , COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 100 10 ms 100 ms 10 250 ms 1.0 10 ms 100 ms 10 250 ms 1.0 0.1 0.1 1.0 10 100 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 1.0 1000 10 100 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 1000 Figure 4. PNP — MJW21191 Safe Operating Area Figure 3. NPN — MJW21192 Safe Operating Area TYPICAL CHARACTERISTICS NPN — MJW21192 PNP — MJW21191 1000 1000 100 h FE , DC CURRENT GAIN h FE, DC CURRENT GAIN 50°C 50°C 100°C 25°C 10 1.0 100°C 100 25°C 10 1.0 0.01 0.1 10 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 5. NPN — MJW21192 VCE = 2.0 V DC Current Gain Motorola Bipolar Power Transistor Device Data 100 0.01 0.1 1.0 10 100 IC, COLLECTOR CURRENT (AMPS) Figure 6. PNP — MJW21191 VCE = 2.0 V DC Current Gain 3 NPN — MJW21192 PNP — MJW21191 1000 1000 100 h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN 50°C 50°C 100°C 25°C 10 1.0 100 25°C 10 1.0 0.01 0.1 1.0 10 100 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 7. NPN — MJW21192 VCE = 5.0 V DC Current Gain Figure 8. PNP — MJW21191 VCE = 5.0 V DC Current Gain 100 1.0 1.0 100°C V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 100°C 25°C 0.1 0.1 100°C 25°C 0.01 0.01 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 0.1 10 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 9. NPN — MJW21192 VCE(sat) IC/IB = 5.0 10 Figure 10. PNP — MJW21191 VCE(sat) IC/IB = 5.0 1.0 10 25°C 0.1 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 100°C 1.0 0.1 100°C 25°C 0.01 0.01 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 11. NPN — MJW21192 VCE(sat) IC/IB = 10 4 10 0.1 SPACE 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 12. PNP — MJW21191 VCE(sat) IC/IB = 10 Motorola Bipolar Power Transistor Device Data 10 NPN — MJW21192 PNP — MJW21191 10 1.0 25°C V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 10 50°C 1.0 25°C 100°C 50°C 100°C 0.1 0.1 0.001 0.01 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 13. NPN — MJW21192 VCE = 2.0 V VBE(on) Curve Motorola Bipolar Power Transistor Device Data 10 0.001 SPACE 0.01 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 Figure 14. PNP — MJW21191 VCE = 2.0 V VBE(on) Curve 5 PACKAGE DIMENSIONS 0.25 (0.010) M –T– –Q– T B M E –B– C 4 L U A R 1 K 2 3 –Y– P V F D 0.25 (0.010) M Y Q G H J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D E F G H J K L P Q R U V MILLIMETERS MIN MAX 19.7 20.3 15.3 15.9 4.7 5.3 1.0 1.4 1.27 REF 2.0 2.4 5.5 BSC 2.2 2.6 0.4 0.8 14.2 14.8 5.5 NOM 3.7 4.3 3.55 3.65 5.0 NOM 5.5 BSC 3.0 3.4 INCHES MIN MAX 0.776 0.799 0.602 0.626 0.185 0.209 0.039 0.055 0.050 REF 0.079 0.094 0.216 BSC 0.087 0.102 0.016 0.031 0.559 0.583 0.217 NOM 0.146 0.169 0.140 0.144 0.197 NOM 0.217 BSC 0.118 0.134 S CASE 340K–03 (TO–247AE) ISSUE A 6 Motorola Bipolar Power Transistor Device Data Motorola reserves the right to make changes without further notice to any products herein. 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