MPSA20 Amplifier Transistor NPN Silicon Features • Pb−Free Package is Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 4.0 Vdc Collector Current − Continuous IC 100 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C TJ, Tstg −55 to +150 °C Operating and Storage Junction Temperature Range 2 BASE 1 EMITTER THERMAL CHARACTERISTICS TO−92 CASE 29−11 STYLE 1 1 Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W 2 3 MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. RqJA is measured with the device soldered into a typical printed circuit board. MPS A20 AYWW G G MPSA20 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MPSA20 MPSA20G Package Shipping TO−92 5,000 Units / Box TO−92 (Pb−Free) 5,000 Units / Box *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 3 1 Publication Order Number: MPSA20/D MPSA20 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector −Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc Emitter −Base Breakdown Voltage (IE = 100 mAdc, IC = 0) V(BR)EBO 4.0 − Vdc ICBO − 100 nAdc DC Current Gain (Note 2) (IC = 5.0 mAdc, VCE = 10 Vdc) hFE 40 400 − Collector −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) − 0.25 Vdc fT 125 − MHz Cobo − 4.0 pF OFF CHARACTERISTICS Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ON CHARACTERISTICS SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (Note 2) (IC = 5.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. EQUIVALENT SWITCHING TIME TEST CIRCUITS +3.0 V 300 ns DUTY CYCLE = 2% 275 +10.9 V 10 < t1 < 500 ms DUTY CYCLE = 2% 10 k −0.5 V <1.0 ns t1 +3.0 V +10.9 V 0 CS < 4.0 pF* −9.1 V 275 10 k < 1.0 ns 1N916 *Total shunt capacitance of test jig and connectors Figure 1. Turn−On Time Figure 2. Turn−Off Time http://onsemi.com 2 CS < 4.0 pF* MPSA20 NOISE FIGURE CONTOURS (VCE = 5.0 Vdc, TA = 25°C) 20 100 BANDWIDTH = 1.0 Hz RS = 0 50 300 mA 10 100 mA 7.0 5.0 10 mA 3.0 BANDWIDTH = 1.0 Hz RS ≈ ∞ IC = 1.0 mA 20 In, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) IC = 1.0 mA 300 mA 100 mA 10 5.0 2.0 1.0 30 mA 0.5 30 mA 10 mA 0.2 2.0 0.1 10 20 50 100 200 500 1k f, FREQUENCY (Hz) 2k 5k 10k 10 20 50 Figure 3. Noise Voltage RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) 1M 500k BANDWIDTH = 1.0 Hz 10k 5k 2.0 dB 2k 1k 500 3.0 dB 4.0 dB 6.0 dB 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500k RS , SOURCE RESISTANCE (OHMS) 10k BANDWIDTH = 1.0 Hz 10 dB 500 700 20k 10k 2.0 dB 2k 1k 500 200 100 1k 1.0 dB 5k 3.0 dB 5.0 dB 8.0 dB 10 20 Figure 5. Narrow Band, 100 Hz 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1k Figure 6. Narrow Band, 1.0 kHz 10 Hz to 15.7 kHz 200k 100k 50k Noise Figure is defined as: 20k NF + 20 log10 10k 5k 1.0 dB 2k 1k 500 200 100 50 5k 200k 100k 50k 20k 200 100 50 2k Figure 4. Noise Current 500k 200k 100k 50k 100 200 500 1k f, FREQUENCY (Hz) en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman’s Constant (1.38 x 10−23 j/°K) T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms) 2.0 dB 3.0 dB 5.0 dB 8.0 dB 10 20 30 50 70 100 200 300 500 700 2 2 1ń2 S ) In RS Ǔ ǒen2 ) 4KTR 4KTRS 1k IC, COLLECTOR CURRENT (mA) Figure 7. Wideband http://onsemi.com 3 MPSA20 TYPICAL STATIC CHARACTERISTICS h FE , DC CURRENT GAIN 400 TJ = 125°C 25°C 200 −55 °C 100 80 MPSA20 VCE = 1.0 V VCE = 10 V 60 40 0.004 0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100 100 1.0 MPSA20 TJ = 25°C 0.8 IC = 1.0 mA 0.6 10 mA 50 mA IC, COLLECTOR CURRENT (mA) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 8. DC Current Gain 100 mA 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 TA = 25°C PULSE WIDTH = 300 ms 80 DUTY CYCLE ≤ 2.0% 200 mA 40 100 mA 20 0 Figure 9. Collector Saturation Region V, VOLTAGE (VOLTS) θV, TEMPERATURE COEFFICIENTS (mV/°C) TJ = 25°C 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 0 VCE(sat) @ IC/IB = 10 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 5.0 10 15 20 25 30 35 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 40 Figure 10. Collector Characteristics 1.4 1.2 400 mA 300 mA 60 0 20 IB = 500 mA 50 1.6 0.8 25°C to 125°C 0 *qVC for VCE(sat) − 55°C to 25°C −0.8 25°C to 125°C −1.6 −2.4 0.1 100 *APPLIES for IC/IB ≤ hFE/2 Figure 11. “On” Voltages qVB for VBE 0.2 − 55°C to 25°C 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 12. Temperature Coefficients http://onsemi.com 4 50 100 MPSA20 TYPICAL DYNAMIC CHARACTERISTICS 1000 VCC = 3.0 V IC/IB = 10 TJ = 25°C 100 70 50 700 500 ts 300 200 t, TIME (ns) t, TIME (ns) 300 200 tr 30 20 td @ VBE(off) = 0.5 Vdc 10 7.0 5.0 100 70 50 tf 30 VCC = 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25°C 20 3.0 1.0 2.0 20 30 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 10 1.0 100 2.0 3.0 20 30 50 70 100 Figure 14. Turn−Off Time 500 10 TJ = 25°C f = 100 MHz TJ = 25°C f = 1.0 MHz 7.0 300 200 C, CAPACITANCE (pF) VCE = 20 V 5.0 V 100 Cib 5.0 Cob 3.0 2.0 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 0.1 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 15. Current−Gain − Bandwidth Product Figure 16. Capacitance 20 10 MPSA20 hfe ≈ 200 @ IC = 1.0 mA 7.0 5.0 VCE = 10 Vdc f = 1.0 kHz TA = 25°C 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 1.0 0.05 50 10 20 50 200 hoe , OUTPUT ADMITTANCE (m mhos) f, T CURRENT−GAIN BANDWIDTH PRODUCT (MHz) Figure 13. Turn−On Time hie , INPUT IMPEDANCE (k Ω ) 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 100 70 50 VCE = 10 Vdc f = 1.0 kHz TA = 25°C MPSA20 hfe ≈ 200 @ IC = 1.0 mA 30 20 10 7.0 5.0 3.0 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 2.0 0.1 100 Figure 17. Input Impedance 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) Figure 18. Output Admittance http://onsemi.com 5 50 100 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) MPSA20 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 FIGURE 20 0.05 P(pk) 0.02 0.03 0.02 t1 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 t2 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN−569) ZqJA(t) = r(t) • RqJA TJ(pk) − TA = P(pk) ZqJA(t) 500 1.0k 2.0k 5.0k 10k 20k 50k 100k Figure 19. Thermal Response 104 DESIGN NOTE: USE OF THERMAL RESPONSE DATA IC, COLLECTOR CURRENT (nA) VCC = 30 Vdc A train of periodical power pulses can be represented by the model as shown in Figure 20. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 19 was calculated for various duty cycles. To find ZqJA(t), multiply the value obtained from Figure 19 by the steady state value RqJA. Example: Dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2) Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C. For more information, see ON Semiconductor Application Note AN569/D, available on our website at www.onsemi.com. 103 102 ICEO 101 ICBO AND 100 ICEX @ VBE(off) = 3.0 Vdc 10−1 10−2 −4 0 −2 0 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (°C) Figure 21. IC, COLLECTOR CURRENT (mA) 400 1.0 ms 200 100 TC = 25°C TA = 25°C 40 dc 20 TJ = 150°C 10 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 6.0 2.0 10 ms 1.0 s dc 60 4.0 The safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 22 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 19. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 ms 4.0 6.0 8.0 10 20 40 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 22. http://onsemi.com 6 MPSA20 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE DIM A B C D G H J K L N P R V K D X X G J H V C SECTION X−X 1 N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− STYLE 1: PIN 1. EMITTER 2. BASE 3. 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