BC447, BC449, BC449A High Voltage Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Collector-Emitter Voltage BC447 BC449, BC449A VCEO Collector-Base Voltage BC447 BC449, BC449A VCBO Emitter-Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 300 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C -55 to +150 °C Operating and Storage Junction Temperature Range COLLECTOR 1 Unit Vdc 80 100 2 BASE Vdc 80 100 TJ, Tstg Moisture Sensitivity Level (MSL) Electrostatic Discharge (ESD) 3 EMITTER 1 2 3 CASE 29 TO-92 STYLE 17 MSL: 1 NA THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RθJA 200 °C/W Thermal Resistance, Junction-to-Case RθJC 83.3 °C/W MARKING DIAGRAM BC 44xx YWW BC44xx xx Y WW = Specific Device Code = 7, 9 or 9A = Year = Work Week ORDERING INFORMATION Device Semiconductor Components Industries, LLC, 2003 March, 2003 - Rev. 2 1 Package Shipping BC447 TO-92 5000 Units/Box BC449 TO-92 5000 Units/Box BC449A TO-92 5000 Units/Box Publication Order Number: BC447/D BC447, BC449, BC449A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 80 100 - - 80 100 - - 5.0 - - - - 100 100 50 120 50 100 50 60 - 460 220 - - 0.125 0.25 - 0.85 - 0.55 - 0.76 0.7 1.2 100 200 - Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = 100 µAdc, IE = 0) V(BR)CEO BC447 BC449, BC449A V(BR)CBO BC447 BC449, BC449A Emitter - Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Vdc Vdc V(BR)EBO Vdc ICBO BC447 BC449, BC449A nAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) hFE BC447, BC449 BC449A BC447, BC449 BC449A BC447, BC449 BC449A Collector - Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) VCE(sat) Base - Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) VBE(sat) Base - Emitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) (Note 1) VBE(on) - Vdc Vdc Vdc DYNAMIC CHARACTERISTICS Current - Gain - Bandwidth Product (IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle 2% fT http://onsemi.com 2 MHz 300 40 25°C TTJJ==25°C TJ = 25°C 200 −5.0 V C, CAPACITANCE (pF) VCE = −1.0 V 100 70 Cibo 10 8.0 6.0 Cobo 50 4.0 30 −1.0 −5.0 −7.0 −10 −2.0 −3.0 2.0 −0.1 −0.2 −50 −70 −100 −20 −30 −5.0 Figure 2. Capacitance −1.0 k −700 −500 VCC = −40 V IC/IB = 10 IB1 = IB2 TJ = 25°C ts −300 200 −200 tf 100 70 50 −100 −70 −50 tr 30 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPS8598 DUTY CYCLE ≤ 10% MPS8599 −30 −20 td @ VBE(off) = −0.5 V −10 −20 −30 −50 −70 −100 −10 −200 −1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70 −100 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 3. Switching Times Figure 4. Active-Region Safe Operating Area 300 1.0 TJ = 125°C 200 TJ = 25°C 0.8 V, VOLTAGE (VOLTS) 25°C 100 70 −50 −100 −10 −20 Figure 1. Current-Gain — Bandwidth Product 20 h FE, DC CURRENT GAIN −2.0 VR, REVERSE VOLTAGE (VOLTS) 300 10 −0.5 −1.0 IC, COLLECTOR CURRENT (mA) 1.0 k 700 500 t, TIME (ns) 20 I C , COLLECTOR CURRENT (mA) f T , CURRENT−GAIN − BANDWIDTH PRODUCT (MHz) BC447, BC449, BC449A −55°C VCE = −5.0 V 50 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 30 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 0 0.2 −50 −100 −200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. DC Current Gain Figure 6. “ON” Voltages http://onsemi.com 3 50 100 200 IC = 10 mA 1.6 IC = 50 mA IC = 20 mA IC = 100 mA R VB , TEMPERATURE COEFFICIENT (mV/ °C) 2.0 IC = 200 mA 1.2 0.8 0.4 TJ = 25°C 0 0.02 0.05 r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) BC447, BC449, BC449A 1.0 0.7 0.5 0.1 0.07 0.05 0.2 1.0 0.5 2.0 10 5.0 20 −1.4 −1.8 RVB FOR VBE −55°C TO 125°C −2.2 −2.6 −3.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Collector Saturation Region Figure 8. Base-Emitter Temperature Coefficient 200 D = 0.5 0.2 0.3 0.2 0.1 −1.0 0.1 0.05 0.02 SINGLE PULSE ZθJC(t) = r(t) • RθJC TJ(pk) − TC = P(pk) ZθJC(t) ZθJA(t) = r(t) • RθJA TJ(pk) − TA = P(pk) ZθJA(t) D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN469) P(pk) 0.01 t1 SINGLE PULSE 0.03 t2 0.02 DUTY CYCLE, D = t1/t2 0.01 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k t, TIME (ms) Figure 9. Thermal Response http://onsemi.com 4 2.0 k 5.0 k 10 k 20 k 50 k 100 k BC447, BC449, BC449A PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AL A B R P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X-X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER http://onsemi.com 5 MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− BC447, BC449, BC449A ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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