ONSEMI PN2907ARLRA

PN2907A
Preferred Device
General Purpose Transistor
PNP Silicon
http://onsemi.com
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
–60
Vdc
Collector–Base Voltage
VCBO
–60
Vdc
Emitter–Base Voltage
VEBO
–5.0
Vdc
Collector Current – Continuous
IC
–600
mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
1.5
12
Watts
mW/°C
–55 to
+150
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
COLLECTOR
3
2
BASE
1
EMITTER
1
2
THERMAL CHARACTERISTICS
3
Symbol
Max
Unit
Thermal Resistance,
Junction to Ambient
RθJA
200
°C/W
TO–92
CASE 29
STYLE 1
Thermal Resistance,
Junction to Case
RθJC
83.3
°C/W
MARKING DIAGRAM
Characteristic
PN2
907A
YWW
PN2907A = Device Code
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
PN2907A
TO–92
5000 Units/Box
PN2907ARLRA
TO–92
2000/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2001
August, 2001 – Rev. 0
1
Publication Order Number:
PN2907A/D
PN2907A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector–Emitter Breakdown Voltage (Note 1.)
(IC = –10 mAdc, IB = 0)
V(BR)CEO
–60
–
Vdc
Collector–Base Breakdown Voltage
(IC = –10 Adc, IE = 0)
V(BR)CBO
–60
–
Vdc
Emitter–Base Breakdown Voltage
(IE = –10 Adc, IC = 0)
V(BR)EBO
–5.0
–
Vdc
Collector Cutoff Current
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
ICEX
–
–50
nAdc
Collector Cutoff Current
(VCB = –50 Vdc, IE = 0)
(VCB = –50 Vdc, IE = 0, TA = 150°C)
ICBO
–
–
–0.01
–10
Base Current
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
IB
–
–50
75
100
100
100
50
–
–
–
300
–
–
–
–0.4
–1.6
–
–
–1.3
–2.6
fT
200
–
MHz
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
–
8.0
pF
Input Capacitance
(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
–
30
pF
ton
–
45
ns
td
–
10
ns
tr
–
40
ns
toff
–
100
ns
ts
–
80
ns
tf
–
30
ns
OFF CHARACTERISTICS
µAdc
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = –0.1 mAdc, VCE = –10 Vdc)
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –150 mAdc, VCE = –10 Vdc) (Note 1.)
(IC = –500 mAdc, VCE = –10 Vdc) (Note 1.)
hFE
Collector–Emitter Saturation Voltage (Note 1.)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
VCE(sat)
Base–Emitter Saturation Voltage (Note 1.)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
VBE(sat)
–
Vdc
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product (Notes 1. and 2.),
(IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz)
SWITCHING CHARACTERISTICS
Turn–On Time
Delay Time
(VCC = –30 Vdc, IC = –150 mAdc,
IB1 = –15
15 mAdc)
Ad ) (Figures
(Fi
1 and
d 5)
Rise Time
Turn–Off Time
Storage Time
(VCC = –6.0 Vdc, IC = –150 mAdc,
IB1 = IB2 = 15 mAdc)
Ad ) (Figure
(Fi
2)
Fall Time
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
http://onsemi.com
2
PN2907A
INPUT
Zo = 50 Ω
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
-30 V
200
1.0 k
0
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
50
-16 V
200 ns
Figure 1. Delay and Rise Time Test Circuit
INPUT
Zo = 50 Ω
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
+15 V
-6.0 V
1.0 k
1.0 k
0
-30 V
50
37
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
1N916
200 ns
Figure 2. Storage and Fall Time Test Circuit
http://onsemi.com
3
PN2907A
TYPICAL CHARACTERISTICS
hFE , NORMALIZED CURRENT GAIN
3.0
VCE = -1.0 V
VCE = -10 V
2.0
TJ = 125°C
25°C
1.0
-55°C
0.7
0.5
0.3
0.2
-0.1
-0.2 -0.3
-0.5 -0.7 -1.0
-2.0
-3.0
-5.0 -7.0
-10
-20
-30
-50 -70 -100
-200 -300
-500
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 3. DC Current Gain
-1.0
-0.8
IC = -1.0 mA
-10 mA
-100 mA
-500 mA
-0.6
-0.4
-0.2
0
-0.005
-0.02 -0.03 -0.05 -0.07 -0.1
-0.01
-0.2 -0.3 -0.5 -0.7 -1.0
IB, BASE CURRENT (mA)
-2.0
-3.0
-20 -30
-5.0 -7.0 -10
-50
Figure 4. Collector Saturation Region
500
tr
100
70
50
300
VCC = -30 V
IC/IB = 10
TJ = 25°C
200
t, TIME (ns)
t, TIME (ns)
300
200
30
20
10
td @ VBE(off) = 0 V
7.0
5.0
3.0
-5.0 -7.0 -10
tf
100
70
50
30
t′s = ts - 1/8 tf
20
10
7.0
5.0
-5.0 -7.0 -10
2.0 V
-20 -30
-50 -70 -100
IC, COLLECTOR CURRENT
VCC = -30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
-200 -300 -500
Figure 5. Turn–On Time
-20 -30
-50 -70 -100
-200 -300 -500
IC, COLLECTOR CURRENT (mA)
Figure 6. Turn–Off Time
http://onsemi.com
4
PN2907A
TYPICAL SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
10
10
8.0
8.0
NF, NOISE FIGURE (dB)
IC = -1.0 mA, Rs = 430 Ω
-500 µA, Rs = 560 Ω
-50 µA, Rs = 2.7 kΩ
-100 µA, Rs = 1.6 kΩ
6.0
4.0
Rs = OPTIMUM SOURCE RESISTANCE
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
50
C, CAPACITANCE (pF)
50
100
200
500 1.0 k 2.0 k
5.0 k 10 k
20 k
f, FREQUENCY (kHz)
Rs, SOURCE RESISTANCE (OHMS)
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
20
Ceb
10
7.0
5.0
Ccb
3.0
-0.2 -0.3 -0.5
-1.0
-2.0 -3.0 -5.0
-10
-20 -30
50 k
400
300
200
100
80
VCE = -20 V
TJ = 25°C
60
40
30
20
-1.0 -2.0
-5.0
-10
-20
-50
-100 -200
-500 -1000
REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 9. Capacitances
Figure 10. Current–Gain — Bandwidth Product
+0.5
-1.0
-0.6
0
VBE(sat) @ IC/IB = 10
COEFFICIENT (mV/ ° C)
TJ = 25°C
-0.8
V, VOLTAGE (VOLTS)
IC = -50 µA
-100 µA
-500 µA
-1.0 mA
4.0
0
100
30
2.0
-0.1
6.0
2.0
f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
NF, NOISE FIGURE (dB)
f = 1.0 kHz
VBE(on) @ VCE = -10 V
-0.4
-0.2
-0.5 -1.0 -2.0 -5.0 -10 -20
-0.5
-1.0
-1.5
RVB for VBE
-2.0
VCE(sat) @ IC/IB = 10
0
-0.1 -0.2
RVC for VCE(sat)
-50 -100 -200
-2.5
-0.1 -0.2 -0.5 -1.0 -2.0
-500
-5.0 -10 -20
-50 -100 -200 -500
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltage
Figure 12. Temperature Coefficients
http://onsemi.com
5
PN2907A
PACKAGE DIMENSIONS
TO–92
TO–226AA
CASE 29–11
ISSUE AL
A
B
R
P
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
L
SEATING
PLANE
K
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
D
X X
G
J
H
V
C
SECTION X–X
1
N
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
http://onsemi.com
6
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
PN2907A
Notes
http://onsemi.com
7
PN2907A
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: [email protected]
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Email: [email protected]
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
http://onsemi.com
8
PN2907A/D