MMT08B310T3 Preferred Devices Thyristor Surge Protectors High Voltage Bidirectional TSPD These Thyristor Surge Protective devices (TSPD) prevent overvoltage damage to sensitive circuits by lightning, induction and power line crossings. They are breakover−triggered crowbar protectors. Turn−off occurs when the surge current falls below the holding current value. • High Surge Current Capability: 80 Amps 10 x 1000 µsec, for Controlled Temperature Environments • The MMT08B310 is used to help equipment meet various regulatory requirements including: Bellcore 1089, ITU K.20 & K.21, IEC 950, UL 1459 & 1950 and FCC Part 68. • Bidirectional Protection in a Single Device • Little Change of Voltage Limit with Transient Amplitude or Rate • Freedom from Wearout Mechanisms Present in Non−Semiconductor Devices • Fail−Safe, Shorts When Overstressed, Preventing Continued Unprotected Operation • Surface Mount Technology (SMT) • Indicates UL Registered − File #E210057 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Off−State Voltage − Maximum MMT08B310T3 VDM Maximum Pulse Surge Short Circuit Current Non−Repetitive Double Exponential Decay Waveform (Notes 1 and 2) 10 x 1000 µsec (−25°C Initial Temperature) 8 x 20 µsec 10 x 160 µsec 10 x 560 µsec Maximum Non−Repetitive Rate of Change of On−State Current Double Exponential Waveform, R = 1.0, L = 1.5 µH, C = 1.67 µF, Ipk = 110A Value http://onsemi.com BIDIRECTIONAL TSPD ( 80 AMP SURGE 310 VOLTS MT1 MT2 SMB (No Polarity) (Essentially JEDEC DO−214AA) CASE 403C Unit V MARKING DIAGRAM 270 A(pk) IPPS1 IPPS2 IPPS3 IPPS4 80 250 150 100 di/dt 100 ) YWW RPCJ RPCJ Y WW A/µs 1. Allow cooling before testing second polarity. 2. Measured under pulse conditions to reduce heating. = Specific Device Code = Year = Work Week ORDERING INFORMATION Device Package Shipping† MMT08B310T3 SMB 12mm Tape and Reel (2.5K/Reel) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2003 October, 2003 − Rev. 0 1 Publication Order Number: MMT08B310T3/D MMT08B310T3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Operating Temperature Range Blocking or Conducting State TJ1 −40 to + 125 °C Overload Junction Temperature − Maximum Conducting State Only TJ2 + 175 °C Instantaneous Peak Power Dissipation (Ipk = 50 A, 10x1000 µsec @ 25°C) PPK 2000 W TL 260 °C Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Devices are bidirectional. All electrical parameters apply to forward and reverse polarities. Characteristics Breakover Voltage (Both polarities) (dv/dt = 100 V/µs, ISC = 1.0 A, Vdc = 1000 V) (+65°C) Breakover Voltage (Both polarities) (f = 60 Hz, ISC = 1.0 A(rms), VOC = 1000 V(rms), RI = 1.0 kΩ, t = 0.5 cycle) (Note 3) (+65°C) Symbol Min Typ Max MMT08B310T3 − − 365 MMT08B310T3 − − 400 Unit V(BO) V V(BO) V MMT08B310T3 − − 365 MMT08B310T3 − − 400 dV(BO)/dTJ − 0.08 − %/°C V(BR) − 310 − V Off State Current (VD1 = 50 V) Both polarities Off State Current (VD2 = VDM) Both polarities ID1 ID2 − − − − 2.0 5.0 µA On−State Voltage (IT = 1.0 A) (PW ≤ 300 µs, Duty Cycle ≤ 2%) (Note 3) VT − 1.53 3.0 V Breakover Current (f = 60 Hz, VDM = 1000 V(rms), RS = 1.0 kΩ) Both polarities IBO − 230 − mA Holding Current (Both polarities) VS = 500 Volts; IT (Initiating Current) = 1.0 Amp IH 175 130 340 − − − mA dv/dt 2000 − − V/µs CO − − 23 45 − 50 pF Breakover Voltage Temperature Coefficient Breakdown Voltage (I(BR) = 1.0 mA) Both polarities MMT08B310T3 (Note 3) (+65°C) Critical Rate of Rise of Off−State Voltage (Linear waveform, VD = Rated VBR, TJ = 25°C) Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal) Capacitance (f = 1.0 MHz, 2.0 Vdc, 1.0 mV rms Signal) 3. Measured under pulse conditions to reduce heating. Voltage Current Characteristic of TSPD (Bidirectional Device) + Current Symbol Parameter ID1, ID2 Off State Leakage Current VD1, VD2 Off State Blocking Voltage VBR Breakdown Voltage VBO Breakover Voltage IBO Breakover Current IH Holding Current VTM On State Voltage VTM V(BO) IH ID1 I(BO) ID2 + Voltage VD1 http://onsemi.com 2 VD2 V(BR) MMT08B310T3 100 V BR , BREAKDOWN VOLTAGE (VOLTS) 340 I D1, OFF−STATE CURRENT (µ A) VD1 = 50 V 10 1 0.1 0.01 0 20 40 60 80 100 TEMPERATURE (°C) 120 300 280 260 240 220 200 180 160 −50 140 Figure 1. Off−State Current versus Temperature 380 1000 360 900 340 320 300 280 260 240 0 50 25 75 TEMPERATURE (°C) 100 125 800 700 600 500 400 300 200 220 200 −25 Figure 2. Breakdown Voltage versus Temperature I H , HOLDING CURRENT (mA) V BO , BREAKOVER VOLTAGE (VOLTS) 320 −50 −25 0 25 75 50 TEMPERATURE (°C) 100 100 −50 125 Figure 3. Breakover Voltage versus Temperature −25 0 50 25 75 TEMPERATURE (°C) 100 125 Figure 4. Holding Current versus Temperature Peak Value 100 230 210 CURRENT (A) Ipp − PEAK PULSE CURRENT − %Ipp 250 tr = rise time to peak value tf = decay time to half value Half Value 50 190 170 150 130 0 0 tr 110 10 tf TIME (s) 100 1000 10000 TIME (s) Figure 5. Exponential Decay Pulse Waveform Figure 6. Peak Surge On−State Current versus Surge Current Duration, Sinusoidal Waveform http://onsemi.com 3 MMT08B310T3 TIP OUTSIDE PLANT GND TELECOM EQUIPMENT GND TELECOM EQUIPMENT RING PPTC* TIP OUTSIDE PLANT RING PPTC* *Polymeric PTC (positive temperature coefficient) overcurrent protection device HEAT COIL TIP OUTSIDE PLANT GND RING HEAT COIL http://onsemi.com 4 TELECOM EQUIPMENT MMT08B310T3 MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 SMB http://onsemi.com 5 mm inches MMT08B310T3 PACKAGE DIMENSIONS SMB CASE 403C−01 ISSUE A S A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. D B C K P J INCHES DIM MIN MAX A 0.160 0.180 B 0.130 0.150 C 0.075 0.095 D 0.077 0.083 H 0.0020 0.0060 J 0.006 0.012 K 0.030 0.050 P 0.020 REF S 0.205 0.220 MILLIMETERS MIN MAX 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 0.051 0.152 0.15 0.30 0.76 1.27 0.51 REF 5.21 5.59 H ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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