MKP1V120 Series Preferred Device Sidac High Voltage Bidirectional Triggers Bidirectional devices designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low voltage on−state. Conduction will continue like a Triac until the main terminal current drops below the holding current. The plastic axial lead package provides high pulse current capability at low cost. Glass passivation insures reliable operation. Applications are: • • • • • • • • High Pressure Sodium Vapor Lighting Strobes and Flashers Ignitors High Voltage Regulators Pulse Generators Used to Trigger Gates of SCR’s and Triacs Indicates UL Registered — File #E116110 Device Marking: Logo, Device Type, e.g., MKP1V120, Date Code http://onsemi.com SIDACS ( ) 0.9 AMPS RMS 120 − 240 V MT1 MT2 MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value MKP 1V1xx0 AYYW Unit Peak Repetitive Off−State Voltage (Sine Wave, 50 to 60 Hz, TJ = − 40 to 125°C) MKP1V120, MKP1V130, MKP1V160 MKP1V240 VDRM, VRRM V On-State Current RMS (TL = 80°C, Lead Length = 3/8″, All Conduction Angles) IT(RMS) 0.9 A Peak Non−repetitive Surge Current (60 Hz One Cycle Sine Wave, TJ = 125°C) ITSM 4.0 A Operating Junction Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C 90 180 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. AXIAL LEAD CASE 59−10 DO−41 PLASTIC xx A YY W = 12, 13, 16 or 24 = Assembly Location = Year = Work Week ORDERING INFORMATION Device Package Shipping† MKP1V120RL DO−41 5000 Tape & Reel MKP1V130RL DO−41 5000 Tape & Reel MKP1V160 DO−41 1000 Units / Bulk MKP1V160RL DO−41 5000 Tape & Reel MKP1V240 DO−41 1000 Units / Bulk MKP1V240RL DO−41 5000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2004 September, 2004 − Rev. 6 1 Publication Order Number: MKP1V120/D MKP1V120 Series THERMAL CHARACTERISTICS Characteristic Symbol Max Unit RJL 40 °C/W TL 260 °C Thermal Resistance, Junction−to−Lead Lead Length = 3/8″ Lead Solder Temperature (Lead Length 1/16″ from Case, 10 s Max) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Symbol Min Typ Max Unit IDRM − − 5.0 A 110 120 150 220 − − 130 140 170 250 VTM − 1.3 1.5 Volts Dynamic Holding Current (Sine Wave, 50 to 60 Hz, RL = 100 Ohm) IH − − 100 mA Switching Resistance (Sine Wave, 50 to 60 Hz) RS 0.1 − − k di/dt − 120 − A/s Characteristic OFF CHARACTERISTICS Repetitive Peak Off−State Current TJ = 25°C (50 to 60 Hz Sine Wave) VDRM = 90 V, MKP1V120, MKP1V130 and MKP1V160 VDRM = 180 V, MKP1V240 ON CHARACTERISTICS Breakover Voltage IBO = 35 A 35 A 200 A 35 A VBO MKP1V120 MKP1V130 MKP1V160 MKP1V240 Peak On−State Voltage (ITM = 1 A Peak, Pulse Width ≤ 300 s, Duty Cycle ≤ 2%) Volts DYNAMIC CHARACTERISTICS Critical Rate−of−Rise of On−State Current, Critical Damped Waveform Circuit (IPK = 130 Amps, Pulse Width = 10 sec) http://onsemi.com 2 MKP1V120 Series Voltage Current Characteristic of SIDAC (Bidirectional Device) + Current Symbol ITM Parameter VTM IDRM Off State Leakage Current VDRM Off State Repetitive Blocking Voltage VBO Breakover Voltage IBO Breakover Current IH Holding Current VTM On State Voltage ITM Peak on State Current IS I(BO) + Voltage VDRM 140 V(BO) (V (BO) – V S) (I S – I (BO)) 1.0 3/ ″ 8 120 IT(RMS) , ON−STATE CURRENT (AMPS) TL 130 3/ ″ 8 110 TJ = 125°C Sine Wave Conduction Angle = 180°C 100 90 80 70 60 50 TJ = 125°C Sine Wave Conduction Angle = 180°C 0.8 Assembled in PCB Lead Length = 3/8″ 0.6 0.4 0.2 40 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 20 40 60 80 100 120 IT(RMS), ON−STATE CURRENT (AMPS) TA, MAXIMUM AMBIENT TEMPERATURE (°C) Figure 1. Maximum Lead Temperature Figure 2. Maximum Ambient Temperature 10 7.0 5.0 140 1.25 3.0 2.0 TJ = 25°C PRMS , POWER DISSIPATION (WATTS) TL , MAXIMUM ALLOWABLE LEAD TEMPERATURE (° C) VS IDRM RS I T , INSTANTANEOUS ON−STATE CURRENT (AMPS) Slope = RS IH 125°C 1.0 0.7 0.5 0.3 0.2 TJ = 25°C Conduction Angle = 180°C 1.00 0.75 0.50 0.25 0.1 0 1.0 2.0 3.0 4.0 0 5.0 0.2 0.4 0.6 0.8 VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS) IT(RMS), ON−STATE CURRENT (AMPS) Figure 3. Typical On−State Voltage Figure 4. Typical Power Dissipation THERMAL CHARACTERISTICS http://onsemi.com 3 1.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MKP1V120 Series 1.0 0.7 0.5 The temperature of the lead should be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady−state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by: 0.3 0.2 ZJL(t) = RJL • r(t) TJL = Ppk RJL[r(t)] tp TIME where: TJL = the increase in junction temperature above the lead temperature r(t) = normalized value of transient thermal resistance at time, t from this figure. For example, r(tp) = normalized value of transient resistance at time tp. 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 20 10 50 100 TJ = TL + TJL 200 500 1.0 k 2.0 k 5.0 k 10 k t, TIME (ms) IH , HOLDING CURRENT (NORMALIZED) 1.4 1.0 0.9 0.8 −60 −40 −20 0 20 40 60 100 80 120 1.2 1.0 0.8 0.6 0.4 −60 140 −40 −20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 6. Typical Breakover Voltage Figure 7. Typical Holding Current 100 IPK, PEAK CURRENT (AMPS) VBO , BREAKOVER VOLTAGE (NORMALIZED) Figure 5. Thermal Response 10 IPK 10% tw 1.0 0.1 1.0 10 tw, PULSE WIDTH (ms) Figure 8. Pulse Rating Curve http://onsemi.com 4 100 120 140 MKP1V120 Series PACKAGE DIMENSIONS DO−41 PLASTIC AXIAL (No Polarity) CASE 059A−01 ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 59−04 OBSOLETE, NEW STANDARD 59−09. 4. 59−03 OBSOLETE, NEW STANDARD 59−10. 5. ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO−41 OUTLINE SHALL APPLY 6. POLARITY DENOTED BY CATHODE BAND. 7. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION. B K D F DIM A B D F K A F K http://onsemi.com 5 INCHES MIN MAX 0.161 0.205 0.079 0.106 0.028 0.034 −−− 0.050 1.000 −−− MILLIMETERS MIN MAX 4.10 5.20 2.00 2.70 0.71 0.86 −−− 1.27 25.40 −−− MKP1V120 Series ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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