MURS260T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. http://onsemi.com Features • • • • • Pb−Free Package is Available Small Compact Surface Mountable Package with J−Bend Leads Rectangular Package for Automated Handling High Temperature Glass Passivated Junction Low Forward Voltage Drop (1.20 Volts Max @ 2.0 A, TJ = 150°C) ULTRAFAST RECTIFIERS 2 AMPERES 600 VOLTS Mechanical Characteristics • Case: Epoxy, Molded • Weight: 95 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • SMB CASE 403A Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Polarity: Polarity Band Indicates Cathode Lead MARKING DIAGRAM MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 600 V Average Rectified Forward Current IF(AV) 2.0 @ TL = 125°C A Non−Repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 35 A TJ 65 to +175 °C Operating Junction Temperature Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. U2J U2J= Device Code ORDERING INFORMATION Device MURS260T3 MURS260T3G Package Shipping† SMB 2500/Tape & Reel SMB (Pb−Free) 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2004 October, 2004 − Rev. 2 1 Publication Order Number: MURS260T3/D MURS260T3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead (TL = 25°C) Symbol Value Unit RJL 13 °C/W Symbol Value Unit ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 1) (iF = 2.0 A, TJ = 25°C) (iF = 2.0 A, TJ = 150°C) vF Maximum Instantaneous Reverse Current (Note 1) (Rated DC Voltage, TJ = 25°C) (Rated DC Voltage, TJ = 150°C) iR Maximum Reverse Recovery Time (iF = 1.0 A, di/dt = 50 A/s) (iF = 0.5 A, iR = 1.0 A, IR to 0.25 A) trr Maximum Forward Recovery Time (iF = 1.0 A, di/dt = 100 A/s, Rec. to 1.0 V) tfr V 1.45 1.20 A 5.0 150 ns 75 50 50 ns 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. 10 10 7.0 7.0 175°C 5.0 TC = 175°C 5.0 TC = 100°C 100°C 3.0 3.0 TC = 25°C TC = 25°C 2.0 IF , INSTANTANEOUS FORWARD CURRENT ( A) I , INSTANTANEOUS FORWARD CURRENT (AMPS) F 2.0 1.0 0.7 0.5 0.3 0.2 0.1 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.07 0.05 0.05 0.03 0.03 0.02 0.02 0.01 0.01 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 VF, INSTANTANEOUS VOLTAGE (VOLTS) VF, INSTANTANEOUS VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage http://onsemi.com 2 2.1 2.3 MURS260T3 100 100 TJ = 175°C IR, REVERSE CURRENT ( A) IR, REVERSE CURRENT ( A) TJ = 175°C 10 TJ = 100°C 1.0 TJ = 25°C 0.1 0.01 10 TJ = 100°C 1.0 TJ = 25°C 0.1 0.01 0 200 100 300 400 500 600 700 0 100 200 300 400 500 600 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current* Figure 4. Maximum Reverse Current 700 * The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if applied VR is sufficiently below rated VR. NOTE: TYPICAL CAPACITANCE AT 0 V = 24 pF 20 15 10 5.0 0 0 4.0 8.0 12 16 20 24 28 32 36 40 10 RATED VOLTAGE APPLIED RJL = 13°C/W TJ = 175°C 9.0 8.0 7.0 6.0 5.0 4.0 DC 3.0 2.0 SQUARE WAVE 1.0 0 0 20 40 60 80 100 120 140 160 VR, REVERSE VOLTAGE (VOLTS) TC, CASE TEMPERATURE (°C) Figure 5. Typical Capacitance Figure 6. Current Derating, Case PF(AV) , AVERAGE POWER DISSIPATION (WATTS) C, CAPACITANCE (pF) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) 25 5.0 SQUARE WAVE 4.0 3.0 DC TJ = 175°C 2.0 1.0 0 0 0.5 1.0 1.5 2.0 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 7. Power Dissipation http://onsemi.com 3 2.5 180 200 MURS260T3 PACKAGE DIMENSIONS SMB DO−214AA CASE 403A−03 ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. S A D INCHES DIM MIN MAX A 0.160 0.180 B 0.130 0.150 C 0.075 0.095 D 0.077 0.083 H 0.0020 0.0060 J 0.006 0.012 K 0.030 0.050 P 0.020 REF S 0.205 0.220 B MILLIMETERS MIN MAX 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 0.051 0.152 0.15 0.30 0.76 1.27 0.51 REF 5.21 5.59 C K P H J SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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