SPICE MODEL: MBRM560 MBRM560 5A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER POWERMITEâ3 Features · · · · · Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency E A Low Reverse Current POWERMITEâ3 G P For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications 3 Lead Free Finish, RoHS Compliant Version (Note 2) Mechanical Data 1 · · Case: POWERMITEâ3 · · · · · · Moisture Sensitivity: Level 1 per J-STD-020C H J B K C Weight: 0.072 grams (approximate) Maximum Ratings 6.61 .889 NOM 1.83 NOM 1.10 PIN 3, BOTTOMSIDE HEAT SINK Pins 1 & 2 must be electrically connected at the printed circuit board. 1.14 .178 NOM H 5.01 5.17 J 4.37 4.43 .178 NOM .71 L PIN 2 Note: Marking: See Page 3 4.09 6.40 K L PIN 1 Polarity: See Diagram 4.03 B G D e3 A E Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish). Max D 2 C Min C M Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Dim .77 M .36 .46 P 1.73 1.83 All Dimensions in mm @ TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbol Value Unit VRRM VRWM VR 60 V VR(RMS) 42 V IO 5 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave Superimposed on Rated Load @ TC = 90°C IFSM 100 A Typical Thermal Resistance Junction to Soldering Point RqJS 2.7 °C/W Tj -55 to +125 °C TSTG -55 to +150 °C Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (See also Figure 5) Operating Temperature Range Storage Temperature Range Electrical Characteristics @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit V(BR)R 60 ¾ ¾ V IR = 0.2mA Forward Voltage VF ¾ ¾ ¾ ¾ 0.65 0.56 0.74 0.64 0.69 0.60 0.78 0.68 V IF = 5A, TJ = 25°C IF = 5A, TJ = 125°C IF = 8A, TJ = 25°C IF = 8A, TJ = 125°C Reverse Current (Note 1) IR ¾ ¾ 2 0.6 200 20 mA mA Characteristic Reverse Breakdown Voltage (Note 1) Notes: Test Condition TJ = 25°C, VR = 60V TJ = 100°C, VR = 60V 1. Short duration test pulse used to minimize self-heating effect. 2. RoHS revision 13.2.2003. High Temperature Solder Exemption Applied, see EU Directive Annex Note 7. DS30299 Rev. 5 - 2 1 of 4 www.diodes.com MBRM560 ã Diodes Incorporated IF, INSTANTANEOUS FORWARD CURRENT (A) 10,000 100 Tj = 125°C 1000 10 Tj = 125°C Tj = 100°C 100 Tj = 100°C 1.0 Tj = 75°C Tj = 25°C 10 0.1 1.0 Tj = 25°C 0.1 0.01 0 0.2 0.4 0.6 30 40 50 60 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 2 Typical Reverse Characteristics 1000 100 Single Half-Sine-Wave TC = 90°C CT, TOTAL CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) VF, INSTANTANEOUS F0RWARD VOLTAGE (V) Fig. 1 Typical Forward Characteristics 20 10 0 0.8 80 60 40 20 0 1 10 100 10 100 0 NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Peak Forward Surge Current DS30299 Rev. 5 - 2 f = 1MHz 2 of 4 www.diodes.com 15 30 45 60 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Capacitance vs. Reverse Voltage MBRM560 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) IF, DC FORWARD CURRENT (A) 7.5 6.0 Note 3 4.5 Note 4 3.0 1.5 Note 5 0 0 25 75 50 100 125 150 3.5 Note 4 3.0 2.5 2.0 1.5 Note 5 1.0 0.5 0 0 TA, AMBIENT TEMPERATURE (°C) Fig. 5 DC Forward Current Derating Notes: 3. TA = TSOLDERING POINT, RqJS = 2.7°C/W, RqSA = 0°C/W. 4. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad dimensions 0.25” x 1.0”. RqJA in range of 20-40°C/W. 5. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. R qJA in range of 100-130°C/W. Ordering Information Notes: 7 4 1 2 5 3 6 IF(AV), AVERAGE FORWARD CURRENT (A) Fig. 6 Forward Power Dissipation 6. (Note 6) Device Packaging Shipping MBRM560-13-F POWERMITEâ3 5000/Tape & Reel For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information MBRM560 YYWW(K) MBRM560 = Product type marking code = Manufacturers’ code marking YYWW = Date code marking YY = Last digit of year ex: 02 for 2002 WW = Week code 01 to 52 (K) = Factory Designer Code POWERMITE is a registered trademark of Microsemi Corporation. DS30299 Rev. 5 - 2 3 of 4 www.diodes.com MBRM560 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30299 Rev. 5 - 2 4 of 4 www.diodes.com MBRM560