ONSEMI NTF3055L108T3G

NTF3055L108
Preferred Device
Power MOSFET
3.0 A, 60 V, Logic Level, N−Channel
SOT−223
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
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3.0 A, 60 V
RDS(on) = 120 mW
Features
• Pb−Free Packages are Available
Applications
•
•
•
•
N−Channel
D
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
G
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
S
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
Vdc
Drain−to−Gate Voltage (RGS = 1.0 MW)
VDGR
60
Vdc
VGS
± 15
± 20
Vdc
Vpk
Gate−to−Source Voltage
− Continuous
− Non−repetitive (tp ≤ 10 ms)
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 100°C
− Single Pulse (tp ≤ 10 ms)
Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2)
Derate above 25°C
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc,
IL(pk) = 7.0 Apk, L = 3.0 mH, VDS = 60 Vdc)
Thermal Resistance
−Junction−to−Ambient (Note 1)
−Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
1
Adc
ID
ID
3.0
1.4
9.0
Apk
PD
2.1
1.3
0.014
Watts
Watts
W/°C
TJ, Tstg
−55
to 175
°C
EAS
74
mJ
IDM
December, 2005 − Rev. 4
SOT−223
CASE 318E
STYLE 3
2
3
MARKING DIAGRAM
AYW
3055L = Device Code
3055LG
A
= Assembly Location
G
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
4 Drain
°C/W
RqJA
RqJA
72.3
114
TL
260
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 1″ pad size, 1 oz.
(Cu. Area 0.0995 in2).
2. When surface mounted to an FR4 board using minimum recommended pad
size, 2−2.4 oz. (Cu. Area 0.272 in2).
© Semiconductor Components Industries, LLC, 2005
4
1
1
Gate
2
3
Drain
Source
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
NTF3055L108/D
NTF3055L108
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
60
−
68
68
−
−
−
−
−
−
1.0
10
−
−
± 100
1.0
−
1.68
4.6
2.0
−
−
92
120
−
0.290
0.250
0.43
−
gfs
−
5.7
−
Mhos
Ciss
−
313
440
pF
Coss
−
112
160
Crss
−
40
60
td(on)
−
11
25
tr
−
35
70
td(off)
−
22
45
tf
−
27
60
QT
−
7.6
15
Q1
−
1.4
−
Q2
−
4.0
−
−
−
0.87
0.72
1.0
−
trr
−
35
−
ta
−
21
−
tb
−
14
−
QRR
−
0.044
−
OFF CHARACTERISTICS
V(BR)DSS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate−Body Leakage Current
Vdc
mAdc
IDSS
(VGS = ± 15 Vdc, VDS = 0 Vdc)
IGSS
mV/°C
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 5.0 Vdc, ID = 1.5 Adc)
RDS(on)
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 5.0 Vdc, ID = 3.0 Adc)
(VGS = 5.0 Vdc, ID = 1.5 Adc, TJ = 150°C)
VDS(on)
Forward Transconductance (Note 3)
(VDS = 7.0 Vdc, ID = 3.0 Adc)
Vdc
mV/°C
mW
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 V,
f = 1.0 MHz)
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 30 Vdc, ID = 3.0 Adc,
VGS = 5.0 Vdc,
RG = 9.1 W) (Note 3)
Fall Time
Gate Charge
(VDS = 48 Vdc, ID = 3.0 Adc,
VGS = 5.0 Vdc) (Note 3)
ns
nC
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 3.0 Adc, VGS = 0 Vdc)
(IS = 3.0 Adc, VGS = 0 Vdc,
TJ = 150°C) (Note 3)
Reverse Recovery Time
(IS = 3.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 3)
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
4. Switching characteristics are independent of operating junction temperatures.
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2
VSD
Vdc
ns
mC
NTF3055L108
6
6
5
VDS > = 10 V
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
VGS = 3.4 V
VGS = 3.5 V
VGS = 4.5 V
4
3
VGS = 6 V
2
VGS = 10 V
VGS = 3.2 V
VGS = 3 V
VGS = 2.8 V
1
VGS = 2.5 V
5
4
3
TJ = 100°C
2
TJ = 25°C
1
TJ = −55°C
0
0
0
0.5
1.5
1
2.5
2
1
3
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0.12
TJ = 25°C
0.08
TJ = −55°C
0.06
0.04
0.02
0
3
2
1
5
4
6
3
3.5
4
4.5
5
0.16
VGS = 10 V
0.14
TJ = 100°C
0.12
0.1
TJ = 25°C
0.08
0.06
TJ = −55°C
0.04
0.02
0
1
2
3
4
5
6
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
10000
2
1.8
VGS = 0 V
ID = 1.5 A
VGS = 5 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
TJ = 100°C
0.1
2.5
Figure 2. Transfer Characteristics
0.16
0.14
2
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
VGS = 5 V
1.5
1.6
1.4
1.2
1
TJ = 150°C
1000
100
TJ = 100°C
10
0.8
0.6
−50
1
−25
0
25
50
75
100
125
150
175
0
10
20
30
40
50
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
60
C, CAPACITANCE (pF)
VGS = 0 V
VDS = 0 V
1000
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
NTF3055L108
TJ = 25°C
Ciss
800
600
Crss
Ciss
400
Coss
200
Crss
0
10
5 VGS 0 VDS 5
10
15
20
25
Q1
Q2
3
2
1
ID = 3 A
TJ = 25°C
0
0
1
2
3
4
5
7
6
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
8
3.2
IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
VGS
4
Qg, TOTAL GATE CHARGE (nC)
VDS = 30 V
ID = 3 A
VGS = 5 V
100
tr
tf
td(off)
10
td(on)
1
10
100
VGS = 0 V
TJ = 25°C
2.8
2.4
2
1.6
1.2
0.8
0.4
0
0.54
0.58
0.62 0.66
0.7
0.74 0.78 0.82 0.86 0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
VGS = 15 V
SINGLE PULSE
TC = 25°C
10
10 ms
1
dc
1 ms
0.1
0.01
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
100 ms
1
10
100
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
RG, GATE RESISTANCE (W)
100
ID, DRAIN CURRENT (AMPS)
QT
5
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
1000
1
6
80
ID = 7 A
70
60
50
40
30
20
10
0
25
50
75
100
125
150
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
175
NTF3055L108
r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE
RESISTANCE (NORMALIZED)
10
1 x 1 inch 1 oz. Cu Pad (3 x 3 inch FR4)
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, TIME (s)
Figure 13. Thermal Response
ORDERING INFORMATION
Package
Shipping†
NTF3055L108T1
SOT−223 (TO−261)
1000 / Tape & Reel
NTF3055L108T1G
SOT−223 (TO−261)
(Pb−Free)
1000 / Tape & Reel
NTF3055L108T3
SOT−223 (TO−261)
4000 / Tape & Reel
NTF3055L108T3G
SOT−223 (TO−261)
(Pb−Free)
4000 / Tape & Reel
NTF3055L108T3LF
SOT−223 (TO−261)
4000 / Tape & Reel
NTF3055L108T3LFG
SOT−223 (TO−261)
(Pb−Free)
4000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTF3055L108
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
F
INCHES
DIM MIN
MAX
A
0.249
0.263
B
0.130
0.145
C
0.060
0.068
D
0.024
0.035
F
0.115
0.126
G
0.087
0.094
H 0.0008 0.0040
J
0.009
0.014
K
0.060
0.078
L
0.033
0.041
M
0_
10 _
S
0.264
0.287
4
S
B
1
2
3
D
L
G
J
C
0.08 (0003)
STYLE 3:
PIN 1.
2.
3.
4.
M
H
K
MILLIMETERS
MIN
MAX
6.30
6.70
3.30
3.70
1.50
1.75
0.60
0.89
2.90
3.20
2.20
2.40
0.020
0.100
0.24
0.35
1.50
2.00
0.85
1.05
0_
10 _
6.70
7.30
GATE
DRAIN
SOURCE
DRAIN
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm Ǔ
ǒinches
SOT−223
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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6
For additional information, please contact your
local Sales Representative.
NTF3055L108/D