ONSEMI NTP5426N

NTB5426N, NTP5426N
Power MOSFET
120 Amps, 60 Volts
N-Channel D2PAK, TO-220
Features
•
•
•
•
http://onsemi.com
Low RDS(on)
High Current Capability
Avalanche Energy Specified
These are Pb−Free Devices
V(BR)DSS
60 V
Applications
•
•
•
•
ID MAX
(Note 1)
RDS(ON) MAX
6.0 mW @ 10 V
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
120 A
N−Channel
D
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage − Continuous
VGS
$20
V
Gate−to−Source Voltage − Nonrepetitive
(TP < 10 ms)
VGS
30
V
ID
120
A
Continuous Drain
Current RqJC
(Note 1)
Steady
State
Power Dissipation
RqJC (Note 1)
Steady
State
Pulsed Drain Current
TC = 25°C
TC = 100°C
TC = 25°C
PD
215
A
TJ, Tstg
−55 to
+175
°C
IS
60
A
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 70 A,
L = 0.3 mH, RG = 25 W)
EAS
735
mJ
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
TL
260
°C
Source Current (Body Diode)
Symbol
Max
Unit
RqJC
0.7
°C/W
Junction−to−Case (Drain)
Steady State (Note 1)
4
1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [1 oz] including traces).
2
3
1
2
D2PAK
CASE 418B
STYLE 2
TO−220AB
CASE 221A
STYLE 5
3
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
5426N
AYWW
5426N
AYWW
THERMAL RESISTANCE RATINGS
Parameter
4
W
260
Operating and Storage Temperature Range
S
85
IDM
tp = 10 ms
G
1
Gate
3
Source
1
Gate
2
Drain
3
Source
2
Drain
G
A
Y
WW
= Pb−Free Device
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2008
November, 2008 − Rev. 0
1
Publication Order Number:
NTB5426N/D
NTB5426N, NTP5426N
ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified)
Characteristics
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VDS = 0 V, ID = 250 mA
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−Body Leakage Current
V
64
VGS = 0 V
VDS = 60 V
mV/°C
TJ = 25°C
1.0
TJ = 150°C
25
IGSS
VDS = 0 V, VGS = $20 V
VGS(th)
VGS = VDS, ID = 250 mA
$100
mA
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Voltage
VGS(th)/TJ
2.0
3.1
4.0
9.2
VDS(on)
V
mV/°C
0.36
V
6.0
mW
VGS = 10 V, ID = 60 A
0.3
VGS = 10 V, ID = 60 A, 150°C
0.6
RDS(on)
VGS = 10 V, ID = 60 A
4.9
gFS
VDS = 15 V, ID = 20 A
65
S
Input Capacitance
Ciss
5800
pF
Output Capacitance
Coss
VDS = 25 V, VGS = 0 V,
f = 1 MHz
Transfer Capacitance
Crss
Static Drain−to−Source On−Resistance
Forward Transconductance
CHARGES, CAPACITANCES & GATE RESISTANCE
1000
370
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
VGS = 10 V, VDS = 48 V,
ID = 60 A
150
170
nC
6.0
Gate−to−Source Charge
QGS
28
Gate−to−Drain Charge
QGD
67
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)
Turn−On Delay Time
Rise Time
td(on)
tr
Turn−Off Delay Time
Fall Time
VGS = 10 V, VDD = 48 V,
ID = 60 A, RG = 3.0 W
ns
15
100
td(off)
105
tf
95
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V
IS = 60 A
TJ = 25°C
0.88
TJ = 100°C
0.78
IS = 60 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms
Reverse Recovery Time
trr
Charge Time
ta
Discharge Time
tb
25
QRR
235
Reverse Recovery Stored Charge
1.1
75
Vdc
ns
50
mC
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device
NTP5426N
NTB5426NT4G
Package
Shipping†
TO−220AB (Pb−Free)
50 Units / Rail
D2PAK (Pb−Free)
800 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
NTB5426N, NTP5426N
TYPICAL CHARACTERISTICS
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
6.6 V
6.0 V
160
5.8 V
120
5.4 V
80
5.0 V
40
0
VDS ≥ 10 V
TJ = 25°C
ID, DRAIN CURRENT (A)
200
240
6.2 V
6.4 V
10 V
VGS = 4.6 V
0
1
2
3
4
5
160
120
80
TJ = 25°C
40
TJ = −55°C
4
3
5
6
7
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
ID = 60 A
TJ = 25°C
0.010
0.009
0.008
0.007
0.006
0.005
5
6
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.006
TJ = 25°C
VGS = 10 V
0.005
0.004
10
30
50
70
90
110
130
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10,000
2.5
VGS = 0 V
ID = 60 A
VGS = 10 V
2.0
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
TJ = 125°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.011
0.004
200
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
240
1.5
1.0
0.5
−50 −25
0
25
50
75
100
125
150
175
TJ = 150°C
1000
TJ = 125°C
100
5
TJ, JUNCTION TEMPERATURE (°C)
10
15
20
25
30
35
40
45
50
55 60
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
3
NTB5426N, NTP5426N
TYPICAL CHARACTERISTICS
VGS = 0 V
TJ = 25°C
10,000
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
12,000
Ciss
8000
6000
Coss
4000
2000
Crss
0
10
20
30
40
50
td(off)
tr
td(on)
1.0
10
TJ = 25°C
ID = 60 A
VDS = 48 V
2.0
0
0
25
50
75
100
125
150
VGS = 0 V
TJ = 25°C
100
80
60
40
20
0
100
0.5
0.6
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
800
VGS = 10 V
Single Pulse
TC = 25°C
100 ms
ID = 70 A
10 ms
AVALANCHE ENERGY (mJ)
ID, DRAIN CURRENT (A)
4.0
120
tf
1 ms
dc
10 ms
10
1
0.1
Q2
Figure 8. Gate−to−Source Voltage vs. Total
Charge
10
100
Q1
6.0
Figure 7. Capacitance Variation
100
1000
8.0
QG, TOTAL GATE CHARGE (nC)
VDD = 48 V
ID = 60 A
VGS = 10 V
1.0
QT
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
t, TIME (ns)
60
IS, SOURCE CURRENT (A)
0
10
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
10
600
400
200
0
100
25
50
75
100
125
150
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
4
175
NTB5426N, NTP5426N
TYPICAL CHARACTERISTICS
100
R(t) (°C/W)
D = 0.5
10 0.2
0.1
1
0.05
0.02
0.01
0.1
0.01
Single Pulse
0.001
0.000001
0.00001
Surface Mounted on FR4 Board using 1 sq in pad size, 1 oz Cu
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 13. Thermal Response
http://onsemi.com
5
1
10
100
1000
NTB5426N, NTP5426N
PACKAGE DIMENSIONS
D2PAK
CASE 418B−04
ISSUE J
C
E
−B−
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
V
W
4
1
2
3
A
S
−T−
SEATING
PLANE
K
J
G
D 3 PL
0.13 (0.005)
VARIABLE
CONFIGURATION
ZONE
W
H
M
T B
M
N
R
P
L
L
M
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT*
8.38
0.33
1.016
0.04
10.66
0.42
17.02
0.67
5.08
0.20
3.05
0.12
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
6
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
U
L
M
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
NTB5426N, NTP5426N
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AA
B
F
−T−
T
4
SEATING
PLANE
C
S
A
Q
1 2 3
H
K
Z
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
U
L
V
R
G
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 5:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
GATE
DRAIN
SOURCE
DRAIN
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
7
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NTB5426N/D