MMT05A230T3, MMT05A260T3, MMT05A310T3 Preferred Devices Thyristor Surge Protectors High Voltage Bidirectional TSPD http://onsemi.com These Thyristor Surge Protective devices (TSPD) prevent overvoltage damage to sensitive circuits by lightning, induction and power line crossings. They are breakover−triggered crowbar protectors. Turn−off occurs when the surge current falls below the holding current value. Secondary protection applications for electronic telecom equipment at customer premises. • High Surge Current Capability: 50 Amps 10 x 1000 μsec; for Controlled Temperature Environments in the SMA package • The MMT05A230T3 Series is used to help equipment meet various regulatory requirements including: Telcordia 1089, ITU K.20 & K.21, IEC 950 and FCC Part 68 • Bidirectional Protection in a Single Device • Little Change of Voltage Limit with Transient Amplitude or Rate • Freedom from Wearout Mechanisms Present in Non−Semiconductor Devices • Fail−Safe, Shorts When Overstressed, Preventing Continued Unprotected Operation • Surface Mount Technology (SMT) • Indicates UL Registered − File #E210057 • Pb−Free Packages are Available BIDIRECTIONAL TSPD 50 AMP SURGE 265 thru 365 VOLTS MT1 MT2 SMA (No Polarity) CASE 403D MARKING DIAGRAM xxx AYWWG MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Off−State Voltage − Maximum MMT05A230T3 MMT05A260T3 MMT05A310T3 VDM Maximum Pulse Surge Short Circuit Current Non−Repetitive Double Exponential Decay Waveform (Notes 1 and 2) 8 x 20 msec 10 x 160 msec 10 x 560 msec 10 x 1000 msec Maximum Non−Repetitive Rate of Change of On−State Current Double Exponential Waveform, IPK = 50 A, PW = 15 ms Value Unit Volts "170 "200 "270 xxx A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package A(pk) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. IPPS1 IPPS2 IPPS3 IPPS4 "150 "100 "70 "50 di/dt "100 Preferred devices are recommended choices for future use and best overall value. A/ms Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Allow cooling before testing second polarity. 2. Measured under pulse conditions to reduce heating. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 5 1 Publication Order Number: MMT05A230T3/D MMT05A230T3, MMT05A260T3, MMT05A310T3 THERMAL CHARACTERISTICS Symbol Max Unit Operating Temperature Range Blocking or Conducting State Characteristic TJ1 −40 to + 125 °C Overload Junction Temperature − Maximum Conducting State Only TJ2 + 175 °C Instantaneous Peak Power Dissipation (Ipk = 50A, 10x1000 μsec @ 25°C) PPK 2000 W TL 260 °C Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Devices are bidirectional. All electrical parameters apply to forward and reverse polarities. Characteristics Breakover Voltage (Both polarities) (dv/dt = 100 V/μs, ISC = 1.0 A, Vdc = 1000 V) Symbol Min Typ Max MMT05A230T3 MMT05A260T3 MMT05A310T3 − − − − − − 265 320 365 MMT05A230T3 MMT05A260T3 MMT05A310T3 − − − − − − 280 340 400 MMT05A230T3 MMT05A260T3 MMT05A310T3 − − − − − − 265 320 365 MMT05A230T3 MMT05A260T3 MMT05A310T3 − − − − − − 280 340 400 − 0.08 − − − − 190 240 280 − − − V(BO) Unit Volts (+65°C) Breakover Voltage (Both polarities) (f = 60 Hz, ISC = 1.0 A(rms), VOC = 1000 V(rms), RI = 1.0 kΩ, t = 0.5 cycle) (Note 3) V(BO) Volts (+65°C) Breakover Voltage Temperature Coefficient dV(BO)/dTJ Breakdown Voltage (I(BR) = 1.0 mA) Both polarities V(BR) MMT05A230T3 MMT05A260T3 MMT05A310T3 %/°C Volts Off State Current (VD1 = 50 V) Both polarities Off State Current (VD2 = VDM) Both polarities ID1 ID2 − − − − 2.0 5.0 μA On−State Voltage (IT = 1.0 A) (PW ≤ 300 μs, Duty Cycle ≤ 2%) (Note 3) VT − 1.53 3.0 Volts Breakover Current (f = 60 Hz, VDM = 1000 V(rms), RS = 1.0 kΩ) Both polarities IBO − 230 − mA Holding Current (Both polarities) VS = 500 Volts; IT (Initiating Current) = "1.0 Amp IH 150 340 − mA dv/dt 2000 − − V/μs CO − − 22 35 − 50 pF (Note 3) Critical Rate of Rise of Off−State Voltage (Linear waveform, VD = Rated VBR, TJ = 25°C) Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V(rms) Signal) Capacitance (f = 1.0 MHz, 2.0 Vdc, 1.0 V(rms) Signal) 3. Measured under pulse conditions to reduce heating. http://onsemi.com 2 MMT05A230T3, MMT05A260T3, MMT05A310T3 Voltage Current Characteristic of TSPD (Bidirectional Device) + Current Symbol Parameter ID1, ID2 Off State Leakage Current VD1, VD2 Off State Blocking Voltage VBR Breakdown Voltage VBO Breakover Voltage IBO Breakover Current IH Holding Current VTM On State Voltage VTM IH ID1 VD2 V(BR) 340 V BR , BREAKDOWN VOLTAGE (VOLTS) I D1, OFF−STATE CURRENT (μ A) I(BO) ID2 + Voltage VD1 100 VD1 = 50V 10 1 0.1 0.01 V(BO) 0 20 40 60 80 100 TEMPERATURE (°C) 120 320 300 MMT05A260T3 260 240 MMT05A230T3 220 200 180 160 −2 0 140 MMT05A310T3 280 Figure 1. Off−State Current versus Temperature −10 0 10 20 30 40 TEMPERATURE (°C) 50 60 Figure 2. Typical Breakdown Voltage versus Temperature http://onsemi.com 3 70 MMT05A230T3, MMT05A260T3, MMT05A310T3 800 MMT05A310T3 320 300 I H , HOLDING CURRENT (mA) V BO , BREAKOVER VOLTAGE (VOLTS) 340 MMT05A260T3 280 260 MMT05A230T3 240 220 200 600 500 400 300 200 180 160 700 − 10 −2 0 10 20 40 30 TEMPERATURE (°C) 0 50 60 100 70 −2 0 Figure 3. Typical Breakover Voltage versus Temperature −10 0 10 20 30 40 TEMPERATURE (°C) 50 60 70 Figure 4. Typical Holding Current versus Temperature Peak Value 100 CURRENT (A) Ipp − PEAK PULSE CURRENT − %Ipp 100 tr = rise time to peak value tf = decay time to half value Half Value 50 1 0.001 0 0 tr 10 tf TIME (ms) Figure 5. Exponential Decay Pulse Waveform 0.01 0.1 1 TIME (sec) 10 100 Figure 6. Peak Surge On−State Current versus Surge Current Duration, Sinusoidal Waveform http://onsemi.com 4 MMT05A230T3, MMT05A260T3, MMT05A310T3 TIP OUTSIDE PLANT GND TELECOM EQUIPMENT GND TELECOM EQUIPMENT RING PPTC* TIP OUTSIDE PLANT RING PPTC* *Polymeric PTC (positive temperature coefficient) overcurrent protection device HEAT COIL TIP OUTSIDE PLANT GND RING HEAT COIL http://onsemi.com 5 TELECOM EQUIPMENT MMT05A230T3, MMT05A260T3, MMT05A310T3 ORDERING INFORMATION Device MMT05A230T3 MMT05A230T3G MMT05A260T3 MMT05A260T3G MMT05A310T3 MMT05A310T3G Package Device Marking Shipping † SMA PBF 5000 / Tape & Reel (12 mm Reel) SMA (Pb−Free) PBF 5000 / Tape & Reel (12 mm Reel) SMA PBG 5000 / Tape & Reel (12 mm Reel) SMA (Pb−Free) PBG 5000 / Tape & Reel (12 mm Reel) SMA PBJ 5000 / Tape & Reel (12 mm Reel) SMA (Pb−Free) PBJ 5000 / Tape & Reel (12 mm Reel) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 MMT05A230T3, MMT05A260T3, MMT05A310T3 PACKAGE DIMENSIONS SMA CASE 403D−02 ISSUE C HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 403D−01 OBSOLETE, NEW STANDARD IS 403D−02. E b DIM A A1 b c D E HE L D POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) MIN 1.91 0.05 1.27 0.15 2.29 4.06 4.83 0.76 MILLIMETERS NOM MAX 2.16 2.41 0.10 0.15 1.45 1.63 0.28 0.41 2.60 2.92 4.32 4.57 5.21 5.59 1.14 1.52 MIN 0.075 0.002 0.050 0.006 0.090 0.160 0.190 0.030 INCHES NOM 0.085 0.004 0.057 0.011 0.103 0.170 0.205 0.045 MAX 0.095 0.006 0.064 0.016 0.115 0.180 0.220 0.060 A L c A1 SOLDERING FOOTPRINT* 4.0 0.157 2.0 0.0787 2.0 0.0787 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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