NP2600SA1, NP2600SB1, NP2600SC1 Preferred Devices Advance Information Thyristor Surge Protector High Voltage Bidirectional TSPD This Thyristor Surge Protective device (TSPD) prevents overvoltage damage to sensitive circuits from lightning, induction and power line crossings. This is a breakover-triggered crowbar protector. Turn-of f occurs when the surge current falls below the holding current value. Features •High Surge Current Capability: 50 A, 80 A & 100 A, 10 x 1000 msec, for Controlled Temperature Environments •The NP2600Sx is used to help equipment meet various regulatory requirements including: Bellcore 1089, ITU K.20 & K.21, IEC 950, UL 1459 & 1950 and FCC Part 68. •Bidirectional Protection in a Single Device •Little Change of Voltage Limit with Transient Amplitude or Rate •Freedom from Wearout Mechanisms Present in Non-Semiconductor Devices •Fail-Safe, Shorts When Overstressed, Preventing Continued Unprotected Operation •Surface Mount Technology • Indicates UL Registered - File #E210057 •This is a Pb-Free Device MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Off-State Voltage - Maximum NP2600Sx1 Unit "220 V BIDIRECTIONAL TSPD ( ) 50, 80, AND 100 AMP SURGE 260 VOLTS HIGH HOLD CURRENT 270 mA MIN MT1 MT2 MARKING DIAGRAM SMB (No Polarity) (JEDEC DO-214AA) CASE 403C 261x x A Y WW G AYWW 261xG G = Device Code = A, B or C = Assembly Location = Year = Work Week = Pb-Free Package (Note: Microdot may be in either location) x = Series Ratings A Maximum Pulse Surge Short Circuit Current Non-Repetitive Double Exponential Decay Waveform (Notes 1 and 2) 2 x 10 ms 10 x 160 ms 10 x 560 ms 5 x 310 ms 10 x 1000 ms Value http://onsemi.com B ORDERING INFORMATION C A(pk) 150 90 50 75 50 250 150 100 100 80 500 200 150 200 100 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Allow cooling before testing second polarity. 2. Measured under pulse conditions to reduce heating. 3. Haefely test method. Device Package Shipping† NP2600SA1T3G SMB (Pb-Free) 2500/Tape & Reel NP2600SB1T3G SMB (Pb-Free) 2500/Tape & Reel NP2600SC1T3G SMB (Pb-Free) 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. This document contains information on a new product. Specifications and information herein are subject to change without notice. © Semiconductor Components Industries, LLC, 2007 June, 2007 - Rev. P0 1 Publication Order Number: NP2600S/D NP2600SA1, NP2600SB1, NP2600SC1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit TJ1 -40 to +125 °C Overload Junction Temperature - Maximum Conducting State Only TJ2 +175 °C Instantaneous Peak Power Dissipation (Ipk = 80 A, 10x1000 msec @ 25°C) PPK 4000 W TL 260 °C Operating Temperature Range Blocking or Conducting State Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Devices are bidirectional. All electrical parameters apply to forward and reverse polarities. Characteristics Symbol Min Typ Max Unit Breakover Voltage (Both Polarities) (dv/dt = 100 V/ms, ISC = 1.0 A, Vdc = 1000 V) V(BO) - - 300 V Breakdown Voltage (I(BR) = 1.0 mA) Both Polarities VDRM 220 - - V Off State Current (VD1 = 50 V) Both Polarities Off State Current (VD2 = VDRM) Both Polarities ID1 ID2 - - 2.0 5.0 mA On-State Voltage (IT = 2.2 A) (PW ≤ 300 ms, Duty Cycle ≤ 2%) (Note 4) VT - 1.53 4.0 V I(BO) - 260 800 mA IH 270 - - mA dv/dt 2000 - - V/ms C0 - 80 60 30 - pF Breakover Current (f = 60 Hz, VDRM = 1000 VRMS, RS = 1.0 kW) Both polarities Holding Current (Both Polarities) (Note 4) VS = 500 V; IT (Initiating Current) = "1.0 A Critical Rate of Rise of Off-State Voltage (Linear waveform, VD = Rated V(BO), TJ = 25°C) Capacitance (f = 1.0 MHz, 2.0 Vdc) (Note 5) NP2600SA1 NP2600SB1 NP2600SC1 Ipp - PEAK PULSE CURRENT - %Ipp 4. Measured under pulse conditions to reduce heating. 5. Signal level 1.0 VRMS. Peak Value 100 +I tr = rise time to peak value tf = decay time to half value IT I(BO) IH Half Value 50 -V oltage +Voltage VT VDRM V(BO) 0 0 tr tf TIME (ms) Figure 1. Exponential Decay Pulse Waveform -I Figure 2. Voltage Current Characteristic of TSPD Symbol VDRM Peak Off State Voltage V(BO) Breakover Voltage I(BO) Breakover Current IH Holding Current VT On State Voltage IT On State Current http://onsemi.com 2 Parameters NP2600SA1, NP2600SB1, NP2600SC1 PACKAGE DIMENSIONS SMB CASE 403C-01 ISSUE A S A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. D B INCHES DIM MIN MAX A 0.160 0.180 B 0.130 0.150 C 0.075 0.095 D 0.077 0.083 H 0.0020 0.0060 J 0.006 0.012 K 0.030 0.050 P 0.020 REF S 0.205 0.220 C K J P MILLIMETERS MIN MAX 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 0.051 0.152 0.15 0.30 0.76 1.27 0.51 REF 5.21 5.59 H SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 http://onsemi.com 3 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NP2600S/D