NCV7708B Double Hex Driver The NCV7708B is a fully protected Hex−Half Bridge−Driver designed specifically for automotive and industrial motion control applications. The six low and high side drivers are freely configurable and can be controlled separately. This allows for high side, low side, and H−Bridge control. H−Bridge control provides forward, reverse, brake, and high impedance states. The drivers are controlled via a standard SPI interface. http://onsemi.com SOIC−28 DW SUFFIX CASE 751F Features • • • • • • • • • • • • • • • • • Ultra Low Quiescent Current Sleep Mode Six Independent High−Side and Six independent Low−Side Drivers Integrated Freewheeling Protection (LS and HS) Internal Upper and Lower Clamp Diodes Configurable as H−Bridge Drivers 0.5 A Continuous (1 A peak) Current RDS(on) = 0.8 W (typ) 5 MHz SPI Control SPI Valid Frame Detection Compliance with 5 V and 3.3 V Systems Overvoltage Lockout Undervoltage Lockout Fault Reporting Current Limit Overtemperature Protection Internally Fused Lead in SOIC−28 Packaged for Better Thermal Performance These are Pb−Free Devices* Typical Applications • Automotive • Industrial • DC Motor Management MARKING DIAGRAM NCV7708B AWLYYWWG A WL YY WW G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package PIN CONNECTIONS OUTL5 OUTH5 OUTH4 OUTL4 VS2 GND GND GND GND VS1 OUTL3 OUTH3 OUTH2 OUTL2 1 OUTH6 OUTL6 SI SCLK CSB GND GND GND GND VCC SO EN OUTL1 OUTH1 ORDERING INFORMATION Device Package Shipping† NCV7708BDWR2G SOIC−28W (Pb−Free) 1000/ Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 May, 2010 − Rev. 1 1 Publication Order Number: NCV7708B/D NCV7708B VS1 VS EN CP ENABLE DRIVE 1 VS Charge Pump High−Side Driver OUTH1 Waveshaping Control Logic VCC POR Fault Detect BIAS Low−Side Driver SPI Control SI Fault SO 16 Bit Logic and Latch SPI SCLK OUTL1 Waveshaping Under−load Overcurrent Thermal Warning/Shutdown OUTH2 VS DRIVE 2 CSB CP OUTL2 VS OUTH3 DRIVE 3 VS1 Undervoltage Lockout CP OUTL3 VS OUTH4 VS2 DRIVE 4 CP VS1 OUTL4 VS Overvoltage Lockout OUTH5 DRIVE 5 VS2 CP OUTL5 VS OUTH6 DRIVE 6 CP GND VS2 Figure 1. Block Diagram http://onsemi.com 2 OUTL6 NCV7708B PIN DESCRIPTION Pin No. Symbol Description 1 OUTL5 Output Low Side 5. Open drain output driver with internal reverse diode. 2 OUTH5 Output High Side 5. Open source output driver with internal reverse diode. Drain connected to VS2. 3 OUTH4 Output High Side 4. Open source output driver with internal reverse diode. Drain connected to VS2. 4 OUTL4 Output Low Side 4. Open drain output driver with internal reverse diode. 5 VS2 Voltage Power Supply input for the High−Side Output Drivers 4, 5, and 6. 6 GND Ground 7 GND Ground 8 GND Ground 9 GND Ground 10 VS1 Voltage Power Supply input for the High−Side Output Drivers 1, 2, and 3, All Six Low−Side Pre Drivers, and All Six Charge Pumps. 11 OUTL3 Output Low Side 3. Open drain output driver with internal reverse diode. 12 OUTH3 Output High Side 3. Open source output driver with internal reverse diode. Drain connected to VS1. 13 OUTH2 Output High Side 2. Open source output driver with internal reverse diode. Drain connected to VS1. 14 OUTL2 Output Low Side 2. Open drain output driver with internal reverse diode. 15 OUTH1 Output High Side 1. Open source output driver with internal reverse diode. Drain connected to VS1. 16 OUTL1 Output Low Side 1. Open drain output driver with internal reverse diode. 17 EN Enable. Input high wakes the IC up from a sleep mode. 18 SO Serial Output. 16 bit serial communications output. 19 VCC Power supply input for Logic. 20 GND Ground 21 GND Ground 22 GND Ground 23 GND Ground 24 CSB Chip Select Bar. Active low serial port operation. 25 SCLK Serial Clock. Clock input for use with SPI communication. 26 SI 27 OUTL6 Output Low Side 6. Open drain output driver with internal reverse diode. 28 OUTH6 Output High Side 6. Open source output driver with internal reverse diode. Drain connected to VS2. Serial Input. 16 bit serial communications input. http://onsemi.com 3 NCV7708B MAXIMUM RATINGS Rating Value Unit Power Supply Voltage (VS1, VS2) (DC) (AC), t < 500 ms, Ivsx > −2 A −0.3 to 40 −1.0 V Output Pin OUTHx (DC) (AC – inductive clamping) −0.3 to 40 −8.0 Output Pin OUTLx (DC) (AC), t < 500 ms, IOUTLx > −2 A (AC Inductive Clamping) −0.3 to 34 −1.0 48 Pin Voltage (Logic Input pins, SI, SCLK, CSB, SO, EN, VCC) −0.3 to 7.0 V Output Current (OUTL1, OUTL2, OUTL3, OUTL4, OUTL5, OUTL6, OUTH1, OUTH2, OUTH3, OUTH4, OUTH5, OUTH6) (DC) Vds = 12 V (DC) Vds = 20 V (DC) Vds = 40 V (AC) Vds = 12 V, (50 ms pulse, 1 s period) (AC) Vds = 20 V, (50 ms pulse, 1 s period) (AC) Vds = 40 V, (50 ms pulse, 1 s period) V V A −1.5 to 1.5 −0.7 to 0.7 −0.25 to 0.25 −2.0 to 2.0 −0.9 to 0.9 −0.3 to 0.3 Electrostatic Discharge, Human Body Model, VS1, VS2, OUTx 4.0 kV Electrostatic Discharge, Human Body Model, all other pins 2.0 kV Electrostatic Discharge, Machine Model 200 V Electrostatic Discharge, Charged Device Model 1.0 kV Operating Junction Temperature −40 to 150 °C Storage Temperature Range −55 to 150 °C 3 − Moisture Sensitivity Level MAX 235°C Processing Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. RECOMMENDED OPERATING CONDITIONS Value Min Max Unit Digital Supply Input Voltage (VCC) 3.0 5.5 V Battery Supply Input Voltage (VS) 5.1 28 V DC Output Current (Dx, Sx) − 0.5 A Junction Temperature (TJ) −40 125 °C Rating THERMAL CONDITIONS Test Conditions, Typical Value min−pad board (Note 1) 1,−pad board (Note 2) Unit Junction−to−Lead (psi−JL8, YJL8) or Pins 6−9, 20−23 10 11 °C/W Junction−to−Ambient (RqJA, qJA) 73 56 °C/W Thermal Parameters 1. 1−oz copper, 240 mm2 copper area, 0.062″ thick FR4. 2. 1−oz copper, 986 mm2 copper area, 0.062″ thick FR4. http://onsemi.com 4 NCV7708B ELECTRICAL CHARACTERISTICS (−40°C < TJ < 150°C, 5.5 V < VSx < 40 V, 3 V < VCC < 5.25 V, EN = VCC, unless otherwise specified) Test Conditions Characteristic Min Typ Max Unit GENERAL Supply Current (VS1 + VS2) Sleep Mode (Note 4) VS1 = VS2 = 13.2 V, VCC = CSB = 5 V, EN = SI = SCLK = 0 V (−40°C to 85°C) − 1.0 5.0 mA Supply Current (VS1) Active Mode EN = VCC, 5.5 V < VSx < 35 V No Load − 2.0 4.0 mA Supply Current (VCC) − Sleep Mode (Note 4) CSB = VCC, EN = SI = SCLK = 0 V (−40°C to 85°C) − 1.0 2.5 mA Supply Current (VCC) − Active Mode EN = CSB = VCC, SI = SCLK = 0 V − 1.5 3.0 mA Supply Current (VS2) Active Mode EN = VCC, 5.5 V < VSx < 35 V No Load − 0.5 1.0 mA 2.60 2.80 3.00 V 4.2 4.6 5.1 V 100 − 400 mV 35.0 37.5 40.0 V VSx Overvoltage Detection Hysteresis 1.5 3.5 5.5 V Thermal Warning (Note 3) 120 145 170 °C − 30 − °C Thermal Shutdown (Note 3) 155 175 195 °C Ratio of Thermal Shutdown to Thermal Warning (Note 3) 1.05 1.20 − − Iout = −500 mA 8 V < Vs < 40 V 8 V < Vs < 40 V, T = 25°C 5.5 V < Vs ≤ 8 V 5.5 V < Vs ≤ 8 V, T = 25°C − − − − − 0.8 − 1.3 1.8 1.0 2.2 − Iout = 500 mA 8 V < Vs < 40 V 8 V < Vs < 40 V, T = 25°C 5.5 V < Vs ≤ 8 V 5.5 V < Vs ≤ 8 V, T = 25°C − − − − − 0.8 − 1.3 1.8 1.0 2.2 − VCC Power−On−Reset Threshold VSx Undervoltage Detection Threshold VSx decreasing VSx Undervoltage Detection Hysteresis VSx Overvoltage Detection Threshold VSx increasing Thermal Warning Hysteresis (Note 3) OUTPUTS Output High RDSon (source) Output Low RDSon (sink) W W Source Leakage Current OUTH(1−6) = 0 V, VSx = 40 V, VCC = 5 V OUTH(1−6) = 0 V, Vsx = 13.2 V, VCC = 5V −5.0 −1.0 − − − − mA Sink Leakage Current OUTL(1−6) = 34 V, VCC = 5 V OUTL(1−6) = 34 V, VCC = 5 V, T = 25°C − − − − 5.0 1.0 mA Overcurrent Shutdown Threshold (OUTHx) VCC = 5 V, Vsx = 13.2 V −1.9 −1.45 −1.0 A Current Limit (OUTHx) VCC = 5 V, Vsx = 13.2 V −5.0 −3.0 −2.0 A Overcurrent Shutdown Threshold (OUTLx) VCC = 5 V, Vsx = 13.2 V 1.0 1.45 1.9 A Overcurrent Shutdown Delay Time − Source Overcurrent Shutdown Delay Time − Sink VCC = 5 V, Vsx = 13.2 V 10 10 25 25 50 50 ms 3. 4. 5. 6. Thermal characteristics are not subject to production test. For temperatures above 85°C, refer to graphs for VSx and VCC Sleep Current vs. Temperature on page 13. Refer to “Typical High−Side Negative Clamp Voltage” graph on page 13. Not production tested. http://onsemi.com 5 NCV7708B ELECTRICAL CHARACTERISTICS (−40°C < TJ < 150°C, 5.5 V < VSx < 40 V, 3 V < VCC < 5.25 V, EN = VCC, unless otherwise specified) Characteristic Test Conditions Min Typ Max Unit OUTPUTS Current Limit (OUTLx) VCC = 5 V, Vsx = 13.2 V 2.0 3.0 5.0 A Under Load Detection Threshold (OUTLx) VCC = 5 V, Vsx = 13.2 V 3.0 8.0 15 mA Under Load Detection Threshold (OUTHx) VCC = 5 V, Vsx = 13.2 V −15 −6.0 −2.0 mA Under Load Detection Delay Time VCC = 5 V, Vsx = 13.2 V 200 350 600 ms Power Transistor Body Diode Forward Voltage IF = 500 mA − 0.9 1.3 V High−Side Clamping Voltage (Note 5) I(OUTHx) = −50 mA − − −0.7 V Low−Side Clamping Voltage I(OUTLx) = 50 mA 34 − 48 V Low−Side Clamping Energy I(OUTLx) = 0.6 A, TA= 25°C, DC = 0.5% − − 15 mJ Input Threshold − High Input Threshold − Low − 30 − − 70 − %VCC Input Hysteresis 100 300 600 mV 5.0 10 10 50 50 100 mA −50 −100 −10 −50 −5.0 −10 mA − 10 15 pF VCC – 1.0 VCC – 0.7 − V − 0.2 0.4 V −10 − 10 mA Logic Inputs (EN, SI, SCLK, CSB) Input Pulldown Current (EN, SI, SCLK) Sleep Mode (SI, SCLK) EN = SI = SCLK = VCC EN = 0, SI = SCLK = VCC Input Pullup Current (CSB) Sleep Mode CSB = 0 V, EN = VCC EN = 0 V, VCC = 5 V Input Capacitance (Note 6) Logic Output (SO) Output High Iout = 1 mA Output Low Iout = −1.6 mA Tri−state Leakage CSB = VCC, 0 V < SO < VCC Tri−state Input Capacitance (Note 6) CSB = VCC, 0 V < VCC < 5.25 V − 10 15 pF High Side Turn On Time Vs = 13.2 V, Rload = 25 W − 7.5 13 ms High Side Turn Off Time Vs = 13.2 V, Rload = 25 W − 3.0 6.0 ms Low Side Turn On Time Vs = 13.2 V, Rload = 25 W − 6.5 13 ms Low Side Turn Off Time Vs = 13.2 V, Rload = 25 W − 2.0 5.0 ms High Side Rise Time Vs = 13.2 V, Rload = 25 W − 4.0 8.0 ms High Side Fall Time Vs = 13.2 V, Rload = 25 W − 2.0 3.0 ms Low Side Rise Time Vs = 13.2 V, Rload = 25 W − 1.0 2.0 ms Low Side Fall Time Vs = 13.2 V, Rload = 25 W − 1.0 3.0 ms Non−Overlap Time High Side Turn Off To Low Side Turn On 1.5 − − ms Non−Overlap Time Low Side Turn Off To High Side Turn On 1.5 − − ms Timing Specifications 3. 4. 5. 6. Thermal characteristics are not subject to production test. For temperatures above 85°C, refer to graphs for VSx and VCC Sleep Current vs. Temperature on page 13. Refer to “Typical High−Side Negative Clamp Voltage” graph on page 13. Not production tested. http://onsemi.com 6 NCV7708B ELECTRICAL CHARACTERISTICS (−40°C < TJ < 150°C, 5.5 V < VSx < 40 V, EN = VCC = 5 V, unless otherwise specified) Timing Chart # Min Typ Max Unit − − 5.0 MHz 200 500 − − − − ns − − − 12 pF SCLK High Time 1 85 − − ns SCLK Low Time 2 85 − − ns SCLK Setup Time 3 4 85 85 − − − − ns SI Setup Time 11 50 − − ns SI Hold Time 12 50 − − ns CSB Setup Time 5 6 100 100 − − − − ns CSB High Time (Note 8) 7 200 − − ns SO enable after CSB falling edge 8 − − 50 ns SO disable after CSB rising edge 9 − − 50 ns Characteristic Conditions Serial Peripheral Interface (VCC = 5 V) SCLK Frequency SCLK Clock Period VCC = 5 V VCC = 3.3 V Maximum Input Capacitance (Note 7) SI, SCLK SO Rise Time Cload = 40 pF − − 10 25 ns SO Fall Time Cload = 40 pF − − 10 25 ns SO Valid Time SCLK ↑ to SO 50% 10 − 20 50 ns 7. Not tested in production 8. This is the minimum time the user must wait between SPI commands. http://onsemi.com 7 NCV7708B 4 7 CSB 6 5 SCLK 3 1 2 CSB SO 8 9 SI 12 SCLK 11 10 SO Figure 2. SPI Timing Diagram SPI Communication Standard 16−bit communication has been implemented for the communication of this IC to turn drivers on and off, and to report faults. (Reference the SPI Communication Frame Format Diagram). The LSB (Least Significant Bit) is clocked in first. Communication is implemented as follows: 1. CSB goes low to allow serial data transfer. 2. A 16 bit word is clocked (SCLK) into the SI (serial input) pin. The SI input signal is latched on the falling edge of SCLK. 3. CSB goes high to transfer the clocked in information to the data registers. (Note: SO is tristate when CSB is high.) 4. The SI data will be accepted when a valid SPI frame is detected. A valid SPI frame consists of the above conditions and a complete set of multiples of 16 bit words. http://onsemi.com 8 NCV7708B CSB SI SRR OUTL1 OUTH1 OUTL2 OUTH2 OUTL3 OUTH3 OUTL4 OUTH4 OUTL5 OUTH5 OUTL6 OUTH6 OCD ULD OVLO TW OUTL1 OUTH1 OUTL2 OUTH2 OUTL3 OUTH3 OUTL4 OUTH4 OUTL5 OUTH5 OUTL6 OUTH6 OLD ULD PSF SCLK SO Figure 3. SPI Communication Frame Format The table below defines the programming bits and diagnostic bits. Fault information is sequentially clocked out the SO pin of the NCV7708B as programming information is clocked into the SI pin of the device. Daisy chain communication between SPI compatible IC’s is possible by connection of the serial output pin (SO) to the input of the sequential IC (SI). Input Data Bit Number Bit Description Output Data Bit Number Bit Status 15 Over Voltage Lock Out Control (OVLO) 0 = Disable 14 Under Load Detection Shut Down Control (ULD) 0 = Disable 13 Over Current Detection Shut Down Control (OCD) 0 = Disable 12 OUTH6 0 = No Fault 14 Under Load Detect Signal (ULD) 0 = No Fault 13 Over Load Detect Signal (OLD) 0 = No Fault 12 OUTH6* 11 OUTL6* 10 OUTH5* 9 OUTL5* 8 OUTH4* 7 OUTL4* 6 OUTH3* 5 OUTL3* 4 OUTH2* 3 OUTL2* 2 OUTH1* 1 OUTL1* 1 = Enable 1 = Enable 1 = On 11 OUTL6 OUTH5 OUTL5 8 OUTH4 OUTH3 OUTL3 4 OUTH2 OUTH1 OUTL1 Status Register Reset (SRR) 0 = Off 0 = Off 0 = Off 0 = Off 1 = On 0 = Off 1 = On 0 0 = Off 1 = On 0 = Off 1 = On 1 0 = Off 1 = On 0 = Off 1 = On 2 0 = Off 1 = On 0 = Off 1 = On OUTL2 0 = Off 1 = On 0 = Off 1 = On 3 0 = Off 1 = On 0 = Off 1 = On 5 0 = Off 1 = On 0 = Off 1 = On 6 0 = Off 1 = On 0 = Off 1 = On OUTL4 1 = Fault 1 = On 0 = Off 1 = On 7 1 = Fault 1 = On 0 = Off 1 = On 9 1 = Fault 1 = On 0 = Off 1 = On 10 Bit Status Power Supply Fail Signal (OVLO or UVLO = PSF) 1 = Enable 0 = Off Bit Description 15 0 = Off 1 = On 0 = No Reset 0 1 = Reset Thermal Warning (TW) 0 = Not in TW 1 = In TW *Output Bits [1:12] represent the state of the designated outputs. http://onsemi.com 9 NCV7708B DETAILED OPERATING DESCRIPTION General initialized in the off (high impedance) condition, and will remain off regardless of the status of VCC. This allows power up sequencing of VCC, VS1, and VS2 up to the user. The voltage on VS1 and VS2 should be operated at the same potential. A built−in hysteresis on the under voltage threshold is included to prevent an unknown region on the power pins. After a device has powered up and the output drivers are allowed to turn on, the output drivers will not turn off until the voltage on the supply pins is reduced from the initial under voltage threshold, or if shut down by either a SPI command or a fault condition. Internal power−up circuitry on the logic supply pin supports a smooth turn on transition. VCC power up resets the internal logic such that all output drivers will be off as power is applied. Exceeding the under voltage lockout threshold on VCC allows information to be input through the SPI port for turn on control. Logic information remains intact over the entire VS1 and VS2 voltage range. The NCV7708B Double Hex Driver provides drive capability for 3 independent H−Bridge configurations, or 6 High Side configurations with 6 Low Side configurations, or any combination of arrangements. Each output drive is characterized for a 500 mA load and has a typical 1.0 A surge capability (at 12 V). Strict adherence to integrated circuit die temperature is necessary. Maximum die temperature is 150°C. This may limit the number of drivers enabled at one time. Output drive control and fault reporting is handled via the SPI (Serial Peripheral Interface) port. An Enable function (EN) provides a low quiescent sleep current mode when the device is not being utilized. No data is stored when the device is in sleep mode. A pull down current source is provided on the EN input to ensure the device is off if the input signal is lost. Pull down current sources are also provided on the SI and SCLK inputs. A pull up current source is provided for the CSB input for the same reason. A loss of signal pulls the CSB input high to stop any spurious signals into the SPI port. Current Limitation Power Up/Down Control Input bit 13 (OCD) controls the action of driver shutoff during current limit. With a 0 for bit 13, there is no driver shutoff, and the drivers current limit at 3 A. With a 1 for input bit 13, the output drivers shut off when the shutdown threshold current is passed. Devices can be turned back on via the SPI port. Note: high currents could cause a high rise in die temperature. Devices will not turn on if the die temperature exceeds the thermal shutdown temperature. An under voltage lockout circuit prevents the output drivers from turning on unintentionally. This control is provided by monitoring the voltages on the VS1, VS2, and VCC pins. Each analog power pin (VS1 or VS2) powers their respective output drivers (VS1 powers OUTH1, OUTH2, OUTH3, all 6 charge pumps and all 6 low side pre−drivers. VS2 powers OUTH4, OUTH5, and OUTH6). All drivers are Over Current Detection Shut Down OCD Input Bit 13 OUTx OCD Condition Output Data Bit 13 Over Load Detect (OLD) Status OUTx Status Current Limit of all Drivers 0 0 0 Unchanged 3A 0 1 1 (Need SRR to reset) Unchanged 3A 1 0 0 Unchanged 3A 1 1 1 (Need SRR to reset) OUTx Latches Off (Need SRR to reset) 3A Under Load Detection The under−load detection is accomplished by monitoring the current from each output driver. A minimum load current (this is the maximum open circuit detection threshold) is required when the drivers are turned on. If the under−load circuit detection threshold has been crossed for more than the under−load delay time, the bit indicator (output bit #14) for open circuit will be set to a 1. In addition, the offending driver will be turned off only if input bit 14 (ULD) is set to 1 (true). Under Load Detection Shut Down ULD Input Bit 14 OUTx ULD Condition Output Data Bit 14 Under Load Detect (ULD) Status OUTx Status 0 0 0 0 Unchanged 1 1 (Need SRR to reset) Unchanged 1 0 0 Unchanged 1 1 1 (Need SRR to reset) OUTx Latches Off (Need SRR to reset) http://onsemi.com 10 NCV7708B Over Voltage Shutdown Over voltage shutdown circuitry monitors the voltage on the VS1 and VS2 pins. When the Over−voltage Threshold voltage level has been breached on both or either one of the VSx supply inputs, output bit 15 will be set and, if input bit 15 (OVLO) is set to 1, all outputs will turn off. Turn on/off status is maintained in the logic circuitry. When proper input voltage levels are re−established, the programmed outputs will turn back on. Over−voltage shutdown can be disabled by using the SPI input bit 15 (OVLO = 0). Over Voltage Lock Out (OVLO) Shut Down OVLO Input Bit 15 VSx OVLO Condition Output Data Bit 15 Power Supply Fail (PSF) Status OUTx Status 0 0 0 0 Unchanged 1 1 (Need SRR to reset) Unchanged 1 0 0 Unchanged 1 1 1 (Need SRR to reset) All Outputs Off (Remain off until VSx is out of OVLO) Thermal Shutdown Six independent thermal shutdown circuits are featured (one common sensor for each HS and LS transistor pair). Each sensor has two levels, one to give a Thermal Warning (TW) and a higher one, Over Temperature, which will shut the drivers off. When the part reaches the temperature point of Thermal Warning, the output data bit 0 (TW) will be set to a 1, and the outputs will remain on. With one or more sensors detecting the over temperature level, all channels will be turned off simultaneously. All outputs will return to normal operation when the part thermally recovers (Thermal toggling), because the over temperature shutdown does not change the actual channel selection. The output data bit 0, Thermal Warning, will latch and remain set, even after cooling, and is reset by using a software command to input bit 0 (SRR). Since thermal warning precedes a thermal shutdown, software polling of this bit will allow for load control and possible prevention of thermal shutdown conditions. Thermal warning information can be retrieved immediately without performing a complete SPI access cycle. Figure 4 below displays how this is accomplished. Bringing the CSB pin from a 1 to a 0 condition immediately displays the information on the output data bit 0, thermal warning, even in the absence of a SCLK signal. As the temperature of the NCV7708B changes from a condition from below the thermal warning threshold to above the thermal warning threshold, the state of the SO pin changes and this level is available immediately when the CSB goes to 0. A 0 on SO indicates there is no thermal warning, while a 1 indicates the IC is above the thermal warning threshold. This warning bit is reset by using the input data bit 0, SRR. CSB CSB SCLK SCLK TWH SO SO Tristate Level Tristate Level NTW Thermal Warning High No Thermal Warning Figure 4. Access to Temperature warning information shows the thermal information is available immediately with activation of the CSB signal without having to toggle the SCLK line. http://onsemi.com 11 NCV7708B Applications Drawing The applications drawing below displays the range with which this part can drive a multitude of loads. 1. H−Bridge Driver configuration 2. Low Side Driver 3. High Side Driver + VSx VSx 3 OUTHx OUTHx OUTLx OUTLx 1 2 GND GND M VSx OUTHx OUTLx GND Figure 5. Application Drawing Any combination of motors and high side drivers can be designed in. This allows for flexibility in many systems. H−Bridge Driver Configuration Overvoltage Clamping − Driving Inductive Loads The NCV7708B has the flexibility of controlling each driver independently. When the device is set up in an H−Bridge configuration, the software design has to take care of avoiding simultaneous activation of connected HS and LS transistors. Resulting high shoot through currents could cause irreversible damage to the device. To avoid excessive voltages when driving inductive loads in a single−side−mode (LS or HS switch, no freewheeling path), the NCV7708B provides internal clamping diodes. Thus any load type can be driven without the requirement of external freewheeling diodes. Due to high power dissipation during clamping, the maximum energy capability of the driver transistor has to be considered. Thermal Model Lead #1 Various copper areas used for heat spreading Package Construction With and Without Mold Compound Molded as 1/4 Symmetry Active Area (red) Lead #8 (one of 8 thermal leads) http://onsemi.com 12 NCV7708B TYPICAL OPERATING CHARACTERISTICS 4.0 −1.0 VCC SLEEP CURRENT (mA) HIGH SIDE CURRENT (A) −1.2 −0.8 −0.6 −0.4 −0.2 0 0 −1.0 −2.0 −3.0 1.0 0 50 TJ, TEMPERATURE (°C) Figure 6. Typical High−side Negative Clamp Voltage vs. Reverse Current, Room Temperature Figure 7. VCC Sleep Supply Current vs. Temperature 150 VS1 + VS2 SLEEP CURRENT (mA) 7.0 90 80 70 1 oz 60 2 oz 50 0 100 200 300 400 500 600 700 800 900 1000 COPPER AREA 6.0 5.0 4.0 3.0 2.0 1.0 0 −50 (mm2) 0 50 100 150 TJ, TEMPERATURE (°C) Figure 9. VS1 + VS2 Sleep Current vs. Temperature Figure 8. qJA vs. Copper Spreader Area 100 Cu_Area = 239 mm2 1 oz 10 R(t) (°C/W) 100 HIGH SIDE PIN VOLTAGE (V) 100 qJA (°C/W) 2.0 0 −50 −4.0 110 40 3.0 Cu_Area = 986 mm2 1 oz 1 S 1.0 0.1 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 TIME (sec) Figure 10. SOIC 28−Lead Single Pulse Heating Curve http://onsemi.com 13 10 100 1000 NCV7708B 100 R(t) (°C/W) D = 0.50 10 D = 0.20 D = 0.10 D = 0.05 1.0 D = 0.01 0.1 Cu_Area = 986 mm2 1 oz 1 S 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 PULSE DURATION (sec) Figure 11. SOIC 28−Lead Thermal Duty Cycle Curves on 1, Spreader Test Board SOIC 28−lead Thermal RC Network Models 239 mm2 986 mm2 239 mm2 Cauer Network 986 mm2 Foster Network Cu Area C’s C’s Units Tau Tau Units 2.68E−05 2.68E−05 W−s/C 1.00E−06 1.00E−06 sec 1.02E−04 1.02E−04 W−s/C 1.00E−05 1.00E−05 sec 2.82E−04 2.84E−04 W−s/C 1.00E−04 1.00E−04 sec 9.58E−04 9.73E−04 W−s/C 5.00E−04 5.00E−04 sec 2.72E−03 2.63E−03 W−s/C 1.00E−03 1.00E−03 sec 2.02E−03 1.95E−03 W−s/C 1.00E−02 1.00E−02 sec 2.93E−02 3.12E−02 W−s/C 8.00E−02 8.00E−02 sec 0.116 0.091 W−s/C 4.00E−01 4.00E−01 sec 0.16 0.21 W−s/C 2.00E+00 2.00E+00 sec 1 1 W−s/C 6.00E+01 5.50E+01 sec R’s R’s R’s R’s 0.048 0.048 °C/W 2.84E−02 2.84E−02 °C/W 0.115 0.115 °C/W 6.14E−02 6.14E−02 °C/W 0.352 0.349 °C/W 1.94E−01 1.94E−01 °C/W 0.777 0.776 °C/W 0.100 0.100 °C/W 0.599 0.630 °C/W 0.500 0.480 °C/W 1.677 1.667 °C/W 1.839 1.933 °C/W 2.968 3.151 °C/W 2.207 1.836 °C/W 6.424 5.527 °C/W 1.249 2.291 °C/W 6.940 6.689 °C/W 8.225 8.000 °C/W 53.503 36.970 °C/W 59.000 41.000 °C/W Bold face items in the Cauer network above, represent the package without the external thermal system. The Bold face items in the Foster network are computed by the square root of time constant R(t) = 28.4 * sqrt(time(sec)). The constant is derived based on the active area of the device with silicon and epoxy at the interface of the heat generation. http://onsemi.com 14 NCV7708B The Cauer networks generally have physical significance and may be divided between nodes to separate thermal behavior due to one portion of the network from another. The Foster networks, though when sorted by time constant (as above) bear a rough correlation with the Cauer networks, are really only convenient mathematical models. Both Foster and Cauer networks can be easily implemented using Junction R1 C1 R2 C2 circuit simulating tools, whereas Foster networks may be more easily implemented using mathematical tools (for instance, in a spreadsheet program), according to the following formula: n R(t) + ȍ Ri ǒ1 * e i+1 R3 C3 Rn Cn Time constants are not simple RC products. Amplitudes of mathematical solution are not the resistance values. Ambient (thermal ground) Figure 12. Grounded Capacitor Thermal Network (“Cauer” Ladder) Junction R1 C1 R2 C2 R3 C3 Rn Cn Each rung is exactly characterized by its RC−product time constant; amplitudes are the resistances. Ambient (thermal ground) Figure 13. Non−Grounded Capacitor Thermal Ladder (“Foster” Ladder) http://onsemi.com 15 Ǔ *tńtaui NCV7708B PACKAGE DIMENSIONS SOIC−28 WB CASE 751F−05 ISSUE H −X− D 28 15 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSION 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBER PR5OTRUSION SHALL NOT BE 0.13 TOTATL IN EXCESS OF B DIMENSION AT MAXIMUM MATERIAL CONDITION. H E 0.25 M Y M −Y− 1 14 PIN 1 IDENT A L 0.10 G B 0.025 M T X S −T− A1 Y SEATING PLANE C M S DIM A A1 B C D E G H L M MILLIMETERS MIN MAX 2.35 2.65 0.13 0.29 0.35 0.49 0.23 0.32 17.80 18.05 7.40 7.60 1.27 BSC 10.05 10.55 0.41 0.90 0_ 8_ SOLDERING FOOTPRINT 8X 11.00 28X 1.30 1 28 28X 0.52 1.27 PITCH 14 15 DIMENSIONS: MILLIMETERS ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 16 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NCV7708B/D