2N6344A, 2N6348A, 2N6349A Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. • Blocking Voltage to 800 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Gate Triggering Guaranteed in all Four Quadrants • For 400 Hz Operation, Consult Factory • 8 Ampere Devices Available as 2N6344 thru 2N6349 • Device Marking: Logo, Device Type, e.g., 2N6344A, Date Code http://onsemi.com TRIACS 12 AMPERES RMS 600 thru 800 VOLTS MT2 MT1 G 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol *Peak Repetitive Off–State Voltage(1) (Gate Open, TJ = –40 to +110°C, Sine Wave 50 to 60 Hz, Gate Open) 2N6344A, 2N6348A 2N6349A VDRM, VRRM *On–State RMS Current (Full Cycle Sine Wave 50 to 60 Hz) (TC = +80°C) (TC = +95°C) IT(RMS) *Peak Non–repetitive Surge Current (One Full Cycle, 60 Hz, TC = +80°C) Preceded and followed by rated current ITSM Circuit Fusing Consideration (t = 8.3 ms) I2t PGM Value Unit Volts 1 600 800 A 3 TO–220AB CASE 221A STYLE 4 12 6.0 100 2 A PIN ASSIGNMENT 1 Main Terminal 1 59 A2s 2 Main Terminal 2 20 Watts 3 Gate 4 Main Terminal 2 PG(AV) 0.5 Watt *Peak Gate Current (Pulse Width = 2.0 µs; TC = +80°C) IGM 2.0 A *Peak Gate Voltage (Pulse Width = 2.0 µs; TC = +80°C) VGM "10 Volts TJ – 40 to +125 °C Tstg – 40 to +150 °C *Peak Gate Power (TC = +80°C, Pulse Width = 2.0 µs) *Average Gate Power (TC = +80°C, t = 8.3 ms) *Operating Junction Temperature Range *Storage Temperature Range Device *Indicates JEDEC Registered Data. (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Semiconductor Components Industries, LLC, 1999 February, 2000 – Rev. 1 ORDERING INFORMATION 1 Package Shipping 2N6344A TO220AB 500/Box 2N6348A TO220AB 500/Box 2N6349A TO220AB 500/Box Preferred devices are recommended choices for future use and best overall value. Publication Order Number: 2N6344A/D 2N6344A, 2N6348A, 2N6349A THERMAL CHARACTERISTICS Characteristic *Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds Symbol Max Unit RθJC 2.0 °C/W TL 260 °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in either direction) Symbol Characteristic Min Typ Max Unit — — — — 10 2.0 µA mA — 1.3 1.75 Volts OFF CHARACTERISTICS *Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C TJ = 110°C IDRM, IRRM ON CHARACTERISTICS *Peak On-State Voltage (ITM = 17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle " p 2%) VTM Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) *MT2(+), G(+); MT2(–), G(–) TC = –40°C *MT2(+), G(–); MT2(–), G(+) TC = –40°C IGT Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 ohms) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) *MT2(+), G(+); MT2(–), G(–) TC = –40°C *MT2(+), G(–); MT2(–), G(+) TC = –40°C VGT Gate Non–Trigger Voltage (VD = Rated VDRM, RL = 10 k ohms, TJ = 110°C) *MT2(+), G(+); MT2(–), G(–); MT2(+), G(–); MT2(–), G(+) VGD Holding Current (VD = 12 Vdc, Gate Open) Initiating Current = 200 mA " mA — — — — — — 6.0 6.0 10 25 — — 50 75 50 75 100 125 Volts — — — — — — 0.9 0.9 1.1 1.4 — — 2.0 2.5 2.0 2.5 2.5 3.0 Volts 0.2 — — — — 6.0 — 40 75 tgt — 1.5 2.0 µs dv/dt(c) — 5.0 — V/µs IH TC = 25°C *TC = –40°C *Turn-On Time (VD = Rated VDRM, ITM = 17 A, IGT = 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs) mA DYNAMIC CHARACTERISTICS Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 17 A, Commutating di/dt = 6.1 A/ms, Gate Unenergized, TC = 80°C) *Indicates JEDEC Registered Data. http://onsemi.com 2 2N6344A, 2N6348A, 2N6349A Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VDRM IDRM Peak Forward Blocking Current VRRM IRRM VTM IH VTM Peak Repetitive Forward Off State Voltage Quadrant 1 MainTerminal 2 + on state IH IRRM at VRRM Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage off state IH Holding Current Quadrant 3 VTM MainTerminal 2 – Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 Quadrant I (+) IGT GATE (–) IGT GATE MT1 MT1 REF REF IGT – + IGT (–) MT2 (–) MT2 Quadrant III Quadrant IV (+) IGT GATE (–) IGT GATE MT1 MT1 REF REF – MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in–phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 + Voltage IDRM at VDRM 2N6344A, 2N6348A, 2N6349A 110 20 dc PAV , AVERAGE POWER (WATTS) TC , CASE TEMPERATURE ( °C) 30° 60° 100 90° 120° 180° 90 α α 80 α = CONDUCTION ANGLE α 16 α 12 α = CONDUCTION ANGLE TJ = 110°C 8.0 90° 60 α = 30° ° 4.0 dc 70 0 0 2.0 4.0 6.0 8.0 10 12 IT(RMS), RMS ON-STATE CURRENT, (AMP) 14 0 2.0 Figure 1. RMS Current Derating I GT , GATE TRIGGER CURRENT (mA) 1.4 QUADRANT 4 1.2 1.0 1 QUADRANTS 2 0.6 0.4 –60 14 50 VD = 12 V 1.6 0.8 4.0 6.0 8.0 10 12 IT(RMS), RMS ON-STATE CURRENT (AMP) Figure 2. On–State Power Dissipation 1.8 Vgt , GATE TRIGGER VOLTAGE (VOLTS) 180° 120° 3 –40 –20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) 120 140 VD = 12 V 30 20 10 QUADRANT 7.0 5.0 –60 Figure 3. Typical Gate Trigger Voltage –40 1 2 3 4 –20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) 120 140 Figure 4. Typical Gate Trigger Current http://onsemi.com 4 2N6344A, 2N6348A, 2N6349A 100 20 GATE OPEN I H , HOLDING CURRENT (mA) 70 50 30 TJ = 100°C 25°C 10 7.0 5.0 MAIN TERMINAL #2 POSITIVE 10 3.0 7.0 2.0 –60 5.0 –20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) 120 140 Figure 6. Typical Holding Current 2.0 100 1.0 0.7 0.5 0.3 0.2 0.1 0.4 80 60 CYCLE 40 TJ = 100°C f = 60 Hz Surge is preceded and followed by rated current 20 0 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 vTM, MAXIMUM INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 1.0 Figure 5. On–State Characteristics r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) –40 3.0 I TSM , PEAK SURGE CURRENT (AMP) i TM , INSTANTANEOUS ON-STATE CURRENT (AMP) 20 MAIN TERMINAL #1 POSITIVE 2.0 3.0 5.0 NUMBER OF CYCLES 7.0 10 Figure 7. Maximum Non–Repetitive Surge Current 1.0 0.5 0.2 ZθJC(t) = r(t) • RθJC 0.1 0.05 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 20 50 t,TIME (ms) 100 200 Figure 8. Typical Thermal Response http://onsemi.com 5 500 1.0 k 2.0 k 5.0 k 10 k 2N6344A, 2N6348A, 2N6349A PACKAGE DIMENSIONS TO–220AB CASE 221A–07 ISSUE Z –T– B F T SEATING PLANE C S 4 Q A U 1 2 3 H K Z R L V J G D N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 STYLE 4: PIN 1. 2. 3. 4. http://onsemi.com 6 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 2N6344A, 2N6348A, 2N6349A Notes http://onsemi.com 7 2N6344A, 2N6348A, 2N6349A ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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