MCR25D, MCR25M, MCR25N Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half–wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half–wave, silicon gate–controlled devices are needed. • Blocking Voltage to 800 Volts • On-State Current Rating of 25 Amperes RMS • High Surge Current Capability — 300 Amperes • Rugged, Economical TO–220AB Package • Glass Passivated Junctions for Reliability and Uniformity • Minimum and Maximum Values of IGT, VGT, and IH Specified for Ease of Design • High Immunity to dv/dt — 100 V/µsec Minimum @ 125°C • Device Marking: Logo, Device Type, e.g., MCR25D, Date Code http://onsemi.com SCRs 25 AMPERES RMS 400 thru 800 VOLTS G A K MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off–State Voltage(1) (TJ = –40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR25D MCR25M MCR25N VDRM, VRRM On-State RMS Current (180° Conduction Angles; TC = 80°C) IT(RMS) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 ms) Forward Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) Forward Average Gate Power (t = 8.3 ms, TC = 80°C) Forward Peak Gate Current (Pulse Width ≤ 1.0 µs, TC = 80°C) Operating Junction Temperature Range Storage Temperature Range Value Unit 4 Volts 400 600 800 ITSM 25 A 300 2 3 A I2t 373 A2sec PGM 20.0 Watts PG(AV) 1 0.5 Watt IGM 2.0 A TJ – 40 to +125 °C Tstg – 40 to +150 °C (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. TO–220AB CASE 221A STYLE 3 PIN ASSIGNMENT 1 Cathode 2 Anode 3 Gate 4 Anode ORDERING INFORMATION Device Package Shipping MCR25D TO220AB 50 Units/Rail MCR25M TO220AB 50 Units/Rail MCR25N TO220AB 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 1999 February, 2000 – Rev. 3 1 Publication Order Number: MCR25/D MCR25D, MCR25M, MCR25N THERMAL CHARACTERISTICS Characteristic Thermal Resistance — Junction to Case — Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds Symbol Value Unit RθJC RθJA 1.5 62.5 °C/W TL 260 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max — — — — 0.01 2.0 Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C TJ = 125°C IDRM IRRM mA ON CHARACTERISTICS Peak Forward On-State Voltage* (ITM = 50 A) VTM — — 1.8 Volts Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) IGT 4.0 12 30 mA Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) VGT 0.5 0.67 1.0 Volts Holding Current (VD =12 Vdc, Initiating Current = 200 mA, Gate Open) IH 5.0 13 40 mA Latching Current (VD = 12 V, IG = 30 mA) IL — 35 80 mA Critical Rate of Rise of Off–State Voltage (VD = 67% of Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) dv/dt 100 250 — V/µs Critical Rate of Rise of On–State Current (IPK = 50 A, Pw = 30 µsec, diG/dt = 1 A/µsec, Igt = 50 mA) di/dt — — 50 A/µs DYNAMIC CHARACTERISTICS *Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 MCR25D, MCR25M, MCR25N Voltage Current Characteristic of SCR + Current Symbol Parameter VDRM IDRM Peak Repetitive Off State Forward Voltage Anode + VTM on state Peak Forward Blocking Current VRRM IRRM Peak Repetitive Off State Reverse Voltage VTM IH Peak On State Voltage IH IRRM at VRRM Peak Reverse Blocking Current Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region + Voltage IDRM at VDRM Forward Blocking Region (off state) 40 1.0 35 0.9 VGT, GATE TRIGGER VOLTAGE (V) I GT, GATE TRIGGER CURRENT (mA) Anode – 30 25 20 15 10 5 0 –40 –25 –10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 –40 –25 –10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) Figure 2. Typical Gate Trigger Voltage versus Junction Temperature Figure 1. Typical Gate Trigger Current versus Junction Temperature http://onsemi.com 3 I T, INSTANTANEOUS ON–STATE CURRENT (A) MCR25D, MCR25M, MCR25N 1 Typical @ 25°C R(t) TRANSIENT THERMAL R (NORMALIZED) 100 Maximum @ 125°C 10 Maximum @ 25°C 1 0.1 Z 0.1 0.9 1.3 1.7 2.1 2.5 2.9 0.1 1 Figure 3. Typical On–State Characteristics 10 100 t, TIME (ms) 1000 @ 1 10 4 Figure 4. Transient Thermal Response 100 IL , LATCHING CURRENT (mA) 100 10 10 1 –40 –25 –10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) 1 –40 –25 –10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) Figure 5. Typical Holding Current versus Junction Temperature Figure 6. Typical Latching Current versus Junction Temperature P(AV), AVERAGE POWER DISSIPATION (WATTS) I H , HOLDING CURRENT (mA) + RqJC @ R(t) 0.01 0.5 VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) 130 120 TC , CASE TEMPERATURE ( °C) qJC(t) a a = Conduction 110 Angle 100 dc 90 80 a = 30° 0 60° 90° 180° 2 4 6 8 10 12 14 16 18 IT(RMS), RMS ON–STATE CURRENT (AMPS) 20 32 28 180° a 24 a = Conduction 20 60° 90° Angle 16 a = 30° 12 8 4 0 0 2 4 6 8 10 12 14 16 18 IT(AV), AVERAGE ON–STATE CURRENT (AMPS) Figure 8. On State Power Dissipation Figure 7. Typical RMS Current Derating http://onsemi.com 4 dc 20 MCR25D, MCR25M, MCR25N 2500 1200 2000 STATIC dv/dt (V/us) 1000 800 85°C 600 100°C 110°C 1500 VPK = 275 1000 VPK = 400 400 VPK = 600 TJ = 125°C 500 200 0 VPK = 800 0 200 300 400 500 600 700 800 80 85 90 95 100 105 110 TJ, Junction Temperature (°C ) VPK , Peak Voltage (Volts) Figure 9. Typical Exponential Static dv/dt Versus Peak Voltage. 1 CYCLE 280 260 240 220 200 TJ=125° C f=60 Hz 180 160 1 2 3 4 115 120 Figure 10. Typical Exponential Static dv/dt Versus Junction Temperature. 300 I TSM, SURGE CURRENT (AMPS) STATIC dv/dt (V/us) Gate Cathode Open, (dv/dt does not depend on RGK ) Gate–Cathode Open, (dv/dt does not depend on RGK) 5 6 7 NUMBER OF CYCLES 8 Figure 11. Maximum Non–Repetitive Surge Current http://onsemi.com 5 9 10 125 MCR25D, MCR25M, MCR25N PACKAGE DIMENSIONS TO–220AB CASE 221A–09 ISSUE Z –T– SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 STYLE 3: PIN 1. 2. 3. 4. http://onsemi.com 6 CATHODE ANODE GATE ANODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 MCR25D, MCR25M, MCR25N Notes http://onsemi.com 7 MCR25D, MCR25M, MCR25N ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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