2N6071A/B Series Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. • Sensitive Gate Triggering Uniquely Compatible for Direct Coupling to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit Logic Functions • Gate Triggering 4 Mode — 2N6071A,B, 2N6073A,B, 2N6075A,B • Blocking Voltages to 600 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Device Marking: Device Type, e.g., 2N6071A, Date Code http://onsemi.com TRIACS 4 AMPERES RMS 200 thru 600 VOLTS MT2 MT1 G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit *Peak Repetitive Off-State Voltage(1) (TJ = 40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) 2N6071A,B 2N6073A,B 2N6075A,B VDRM, VRRM *On-State RMS Current (TC = 85°C) Full Cycle Sine Wave 50 to 60 Hz IT(RMS) 4.0 Amps ITSM 30 Amps I2t 3.7 A2s PGM 10 Watts PG(AV) 0.5 Watt VGM 5.0 Volts TJ –40 to +110 °C Tstg –40 to +150 °C — 8.0 in. lb. * *Peak Non–repetitive Surge Current (One Full cycle, 60 Hz, TJ = +110°C) Circuit Fusing Considerations (t = 8.3 ms) *Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 85°C) *Average Gate Power (t = 8.3 ms, TC = 85°C) *Peak Gate Voltage (Pulse Width ≤ 1.0 µs, TC = 85°C) *Operating Junction Temperature Range *Storage Temperature Range Mounting Torque (6-32 Screw)(2) Volts 200 400 600 3 2 1 TO–225AA (formerly TO–126) CASE 077 STYLE 5 PIN ASSIGNMENT 1 Main Terminal 1 2 Main Terminal 2 3 Gate ORDERING INFORMATION *Indicates JEDEC Registered Data. (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. (2) Torque rating applies with use of a compression washer. Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Main terminal 2 and heatsink contact pad are common. Device Package Shipping 2N6071A TO225AA 500/Box 2N6071B TO225AA 500/Box 2N6073A TO225AA 500/Box 2N6073B TO225AA 500/Box 2N6075A TO225AA 500/Box 2N6075B TO225AA 500/Box Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 May, 2000 – Rev. 3 1 Publication Order Number: 2N6071/D 2N6071A/B Series THERMAL CHARACTERISTICS Symbol Max Unit *Thermal Resistance, Junction to Case Characteristic RθJC 3.5 °C/W Thermal Resistance, Junction to Ambient RθJA 75 °C/W TL 260 °C Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Symbol Characteristic Min Typ Max Unit — — — — 10 2 µA mA — — 2 Volts OFF CHARACTERISTICS *Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C TJ = 110°C IDRM, IRRM ON CHARACTERISTICS *Peak On-State Voltage(1) (ITM = 6 A Peak) VTM *Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms, TJ = –40°C) All Quadrants VGT Gate Non–Trigger Voltage (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms, TJ = 110°C) All Quadrants VGD " *Holding Current (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = 1 Adc) " Volts — 1.4 2.5 Volts 0.2 — — IH (TJ = –40°C) (TJ = 25°C) Turn-On Time (ITM = 14 Adc, IGT = 100 mAdc) tgt mA — — — — 30 15 — 1.5 — µs QUADRANT (Maximum Value) IGT @ TJ I mA II mA III mA IV mA 2N6071A 2N6073A 2N6075A +25°C 5 5 5 10 –40°C 20 20 20 30 2N6071B 2N6073B 2N6075B +25°C 3 3 3 5 –40°C 15 15 15 20 Type Gate Trigger Current (Continuous dc) (Main Terminal Voltage = 12 Vdc Vdc, RL = 100 ohms) DYNAMIC CHARACTERISTICS Critical Rate of Rise of Commutation Voltage @ VDRM, TJ = 85°C, Gate Open, ITM = 5.7 A, Exponential Waveform, Commutating di/dt = 2.0 A/ms *Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 dv/dt(c) — 5 — V/µs 2N6071A/B Series SAMPLE APPLICATION: TTL-SENSITIVE GATE 4 AMPERE TRIAC TRIGGERS IN MODES II AND III 14 0V MC7400 4 7 VEE = 5.0 V + –VEE LOAD 2N6071A 510 Ω 115 VAC 60 Hz Trigger devices are recommended for gating on Triacs. They provide: 1. Consistent predictable turn-on points. 2. Simplified circuitry. 3. Fast turn-on time for cooler, more efficient and reliable operation. Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VDRM IDRM Peak Repetitive Forward Off State Voltage VRRM IRRM VTM IH VTM on state Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Quadrant 1 MainTerminal 2 + IH IRRM at VRRM Peak Reverse Blocking Current Maximum On State Voltage off state IH Holding Current Quadrant 3 VTM MainTerminal 2 – http://onsemi.com 3 + Voltage IDRM at VDRM 2N6071A/B Series Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 Quadrant I (+) IGT GATE (–) IGT GATE MT1 MT1 REF REF IGT – + IGT (–) MT2 Quadrant III (–) MT2 Quadrant IV (+) IGT GATE (–) IGT GATE MT1 MT1 REF REF – MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in–phase signals (using standard AC lines) quadrants I and III are used. SENSITIVE GATE LOGIC REFERENCE IC Logic g Functions Firing Quadrant II III TTL 2N6071A Series 2N6071A Series HTL 2N6071A Series 2N6071A Series CMOS (NAND) I 2N6071B Series CMOS (Buffer) Operational Amplifier Zero Voltage Switch IV 2N6071B Series 2N6071B Series 2N6071B Series 2N6071A Series 2N6071A Series 2N6071A Series 2N6071A Series http://onsemi.com 4 2N6071A/B Series 110 110 α = 30° TC , CASE TEMPERATURE (° C) TC , CASE TEMPERATURE (° C) 60° 100 α = 30° 60° 90° 90 120° 180° dc a 80 α 70 120° 90 180° a 80 70 1.0 2.0 3.0 IT(AV), AVERAGE ON-STATE CURRENT (AMP) 4.0 α = CONDUCTION ANGLE 0 Figure 2. RMS Current Derating 8.0 8.0 a a 180° a 6.0 P(AV) , AVERAGE POWER (WATTS) P(AV) , AVERAGE POWER (WATTS) 4.0 1.0 2.0 3.0 IT(RMS), RMS ON-STATE CURRENT (AMP) Figure 1. Average Current Derating dc 120° α = CONDUCTION ANGLE 90° 60° 4.0 α = 30° 2.0 0 dc a 6.0 α = 180° α = CONDUCTION ANGLE 120° 4.0 30° 2.0 60° 90° 0 0 1.0 2.0 3.0 IT(AV), AVERAGE ON-STATE CURRENT (AMP) 4.0 0 1.0 2.0 3.0 IT(RMS), RMS ON-STATE CURRENT (AMP) Figure 3. Power Dissipation 3.0 OFF-STATE VOLTAGE = 12 Vdc ALL MODES 2.0 1.0 0.7 0.5 0.3 –60 –40 –20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) 4.0 Figure 4. Power Dissipation I GT , GATE TRIGGER CURRENT (NORMALIZED) V GT , GATE TRIGGER VOLTAGE (NORMALIZED) dc a α = CONDUCTION ANGLE 0 90° 100 120 140 3.0 OFF-STATE VOLTAGE = 12 Vdc ALL MODES 2.0 1.0 0.7 0.5 0.3 –60 Figure 5. Typical Gate–Trigger Voltage –40 –20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) 120 Figure 6. Typical Gate–Trigger Current http://onsemi.com 5 140 2N6071A/B Series 40 IH, HOLDING CURRENT (NORMALIZED) 3.0 30 20 10 ITM , ON-STATE CURRENT (AMP) 7.0 5.0 2.0 1.0 0.7 0.5 0.3 –60 TJ = 110°C 3.0 GATE OPEN APPLIES TO EITHER DIRECTION –40 –20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) 2.0 Figure 8. Typical Holding Current TJ = 25°C 1.0 34 32 PEAK SINE WAVE CURRENT (AMP) 0.7 0.5 0.3 0.2 30 28 26 24 TJ = –40 to +110°C f = 60 Hz 22 20 18 16 0.1 0 1.0 2.0 3.0 4.0 14 1.0 5.0 2.0 4.0 5.0 7.0 10 NUMBER OF FULL CYCLES VTM, ON-STATE VOLTAGE (VOLTS) Figure 7. Maximum On–State Characteristics Z θJC(t), TRANSIENT THERMAL IMPEDANCE (°C/W) 3.0 Figure 9. Maximum Allowable Surge Current 10 5.0 MAXIMUM 3.0 2.0 TYPICAL 1.0 0.5 0.3 0.2 0.1 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 t, TIME (ms) Figure 10. Thermal Response http://onsemi.com 6 500 1.0 k 2.0 k 5.0 k 10 k 2N6071A/B Series PACKAGE DIMENSIONS TO–225AA (formerly TO–126) CASE 077–09 ISSUE W –B– U F Q –A– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C M 1 2 3 H K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 ––– STYLE 5: PIN 1. MT 1 2. MT 2 3. GATE http://onsemi.com 7 MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 ––– 2N6071A/B Series ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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