NRVBB1060 SWITCHMODEt Power Rectifier This SWITCHMODE power rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state−of−the−art device has the following features: http://onsemi.com Features • • • • • SCHOTTKY BARRIER RECTIFIER 10 AMPERES, 60 VOLTS Low Forward Voltage 175°C Operating Junction Temperature Low Power Loss/High Efficiency High Surge Capacity This is a Pb−Free Device 1 4 3 Applications • Power Supply − Output Rectification • Power Management 4 Mechanical Characteristics • • • • • 1 Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 1.7 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 3 D2PAK CASE 418B STYLE 3 MARKING DIAGRAM AY WW B1060G AKA A Y WW B1060 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Diode Polarity ORDERING INFORMATION Device Package Shipping † NRVBB1060T4G D2PAK (Pb−Free) 800/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 June, 2006 − Rev. 0 1 Publication Order Number: NRVBB1060/D NRVBB1060 MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 60 V Average Rectified Forward Current (Rated VR) TC = 133°C IF(AV) 10 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 133°C IFRM 20 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 0.5 A Operating Junction Temperature (Note 1) TJ *65 to +175 °C Storage Temperature Tstg *65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Maximum Thermal Resistance, Junction−to−Case RqJC 2.0 °C/W Maximum Thermal Resistance, Junction−to−Ambient RqJA 60 °C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 2) (iF = 10 Amps, TC = 125°C) (iF = 10 Amps, TC = 25°C) (iF = 20 Amps, TC = 125°C) (iF = 20 Amps, TC = 25°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TC = 125°C) (Rated dc Voltage, TC = 25°C) iR V 0.7 0.8 0.85 0.95 mA 25 0.10 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 100 100 10 150°C IR , REVERSE CURRENT (mA) TJ = 150°C 85°C 125°C TJ = 25°C 1.0 10 125°C 1.0 85°C 0.1 0.01 25°C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.001 1.2 50 40 60 1000 C, CAPACITANCE (pF) 14 SQUARE WAVE 10 TJ = 25°C f = 1 MHz 900 dc 12 8.0 6.0 4.0 9.0 30 Figure 2. Typical Reverse Current 16 10 20 Figure 1. Typical Forward Voltage 18 0 110 10 VR, REVERSE VOLTAGE (VOLTS) 20 2.0 0 vF, INSTANTANEOUS VOLTAGE (VOLTS) 800 700 600 500 400 300 200 100 RqJC = 2°C/W 120 130 140 160 150 170 0 180 0 5 10 15 20 25 30 35 40 TC, CASE TEMPERATURE (°C) VR, REVERSE VOLTAGE (V) Figure 3. Current Derating, Case Figure 4. Typical Capacitance TJ = 85°C SQUARE WAVE IPK/IAV = p 8.0 7.0 PF(AV) , AVERAGE POWER DISSIPATION (WATTS) PF(AV) , AVERAGE POWER DISSIPATION (WATTS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) NRVBB1060 dc IPK/IAV = 5.0 6.0 IPK/IAV = 10 5.0 4.0 3.0 IPK/IAV = 20 2.0 1.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 11 12 13 14 15 45 10 TJ = 150°C 9.0 SQUARE WAVE 8.0 IPK/IAV = p 7.0 dc IPK/IAV = 5.0 6.0 5.0 IPK/IAV = 10 4.0 3.0 IPK/IAV = 20 2.0 1.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 11 12 13 14 15 IF(AV), AVERAGE CURRENT (AMPS) IF(AV), AVERAGE CURRENT (AMPS) Figure 5. Typical Forward Power Dissipation Figure 6. Typical Forward Power Dissipation http://onsemi.com 3 50 NRVBB1060 PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E V W −B− 4 DIM A B C D E F G H J K L M N P R S V A 1 2 S 3 −T− SEATING PLANE K W J G D H 3 PL 0.13 (0.005) VARIABLE CONFIGURATION ZONE M T B M N R M STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE P U L L L M M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 SOLDERING FOOTPRINT* 8.38 0.33 1.016 0.04 10.66 0.42 5.08 0.20 3.05 0.12 17.02 0.67 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 4 INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 NRVBB1060 SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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