ONSEMI MBRB2535CTLG

MBRB2535CTL
Preferred Device
SWITCHMODE™
Power Rectifier
D2PAK Surface Mount Power Package
The D2PAK Power Rectifier employs the Schottky Barrier principle
in a large metal−to−silicon power diode. State−of−the−art geometry
features epitaxial construction with oxide passivation and metal
overlay contact. Ideally suited for use in low voltage, high frequency
switching power supplies, free wheeling diodes, and polarity
protection diodes. These state−of−the−art devices have the following
features:
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SCHOTTKY BARRIER
RECTIFIER
25 AMPERES, 35 VOLTS
1
Features
•
•
•
•
•
•
•
•
4
3
Center−Tap Configuration
Guardring for Stress Protection
Low Forward Voltage
125°C Operating Junction Temperature
Epoxy Meets UL 94, V−0 @ 0.125 in
Short Heatsink Tab Manufactured − Not Sheared
Similar in Size to the Industry Standard TO−220 Package
Pb−Free Packages are Available
4
1
3
MARKING DIAGRAM
Mechanical Characteristics
AYWW
B2535LG
AKA
• Case: Epoxy, Molded, Epoxy Meets UL 94, V−0
• Weight: 1.7 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
•
•
D2PAK
CASE 418B
STYLE 3
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL1 Requirements
ESD Ratings:
Machine Model, C (>400 V)
Human Body Model, 3B (>8000 V)
A
Y
WW
B2535L
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Diode Polarity
ORDERING INFORMATION
Device
Package
Shipping†
MBRB2535CTL
D2PAK
50 Units/Rail
MBRB2535CTLG
D2PAK
(Pb−Free)
50 Units/Rail
MBRB2535CTLT4
D2PAK
800/Tape & Reel
MBRB2535CTLT4G
D2PAK
800 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2007
January, 2007 − Rev. 6
1
Publication Order Number:
MBRB2535CTL/D
MBRB2535CTL
MAXIMUM RATINGS (Per Leg)
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
35
V
Average Rectified Forward Current, (Rated VR, TC = 110°C)
IF(AV)
12.5
A
Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 90°C)
IFRM
25
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
150
A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
IRRM
1.0
A
Storage Temperature Range
Tstg
−65 to +150
°C
Operating Junction Temperature
TJ
−65 to +125
°C
dv/dt
10,000
V/ms
Rating
Voltage Rate of Change (Rated VR)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS (Per Leg)
Characteristic
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient (Note 1)
Symbol
Value
Unit
RqJC
RqJA
1.0
84
°C/W
ELECTRICAL CHARACTERISTICS (Per Leg)
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 25 A, TJ = 25°C)
(iF = 12.5 A, TJ = 125°C)
(iF = 12.5 A, TJ = 25°C)
vF
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
IR
V
0.55
0.41
0.47
mA
500
10
1. When mounted using minimum recommended pad size on FR−4 board.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
1000
50
20
I R, REVERSE LEAKAGE CURRENT (mA)
I F, INSTANTANEOUS FORWARD CURRENT (AMP)
MBRB2535CTL
TJ = 125°C
10
5
TJ = 25°C
2
1
0.5
0.2
0.1
0
0.1
TJ = 125°C
100
0.2
0.3
0.4
0.5
0.6
0.7
0.8
vF, INSTANTANEOUS VOLTAGE (VOLTS)
0.9
TJ = 100°C
10
1
TJ = 25°C
0.1
10
0
40
TJ = 125°C
35
SQUARE
WAVE
30
25
SINE WAVE
(RESISTIVE LOAD)
20
DC
15
10
5
0
0
5
10
15
20
25
30
35
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
10
15
20
25
VR, REVERSE VOLTAGE (VOLTS)
30
35
Figure 2. Typical Reverse Current, Per Leg
40
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
PF(AV), AVERAGE FORWARD POWER DISSIPATION (WATTS)
Figure 1. Typical Forward Voltage, Per Leg
5
32
(RATED Vr APPLIED)
RqJC = 2°C/W
28
24
20
DC
16
SQUARE
12
8
4
0
85
Figure 3. Typical Forward Power Dissipation
95
105
115
TC, CASE TEMPERATURE (°C)
Figure 4. Current Derating, Case
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3
125
MBRB2535CTL
PACKAGE DIMENSIONS
D2PAK
CASE 418B−04
ISSUE J
C
−B−
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
E
4
V
W
1
2
S
3
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
A
−T−
SEATING
PLANE
G
K
D 3 PL
0.13 (0.005)
VARIABLE
CONFIGURATION
ZONE
M
T B
W
J
M
H
N
R
L
M
P
U
L
M
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
L
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT*
8.38
0.33
1.016
0.04
10.66
0.42
5.08
0.20
3.05
0.12
17.02
0.67
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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4
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
MBRB2535CTL
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
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5
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MBRB2535CTL/D