MBR40L45CTG SWITCHMODE] Power Rectifier 45 V, 40 A Features and Benefits • • • • • • • http://onsemi.com Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 40 A Total (20 A Per Diode Leg) Guard−Ring for Stress Protection This is a Pb−Free Device* SCHOTTKY BARRIER RECTIFIERS 40 AMPERES, 45 VOLTS 1 Applications 2, 4 • Power Supply − Output Rectification • Power Management • Instrumentation 3 MARKING DIAGRAM Mechanical Characteristics: • • • • • • Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight (Approximately): 1.9 Grams (TO−220) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped 50 Units Per Plastic Tube for TO−220 4 TO−220 CASE 221A PLASTIC 1 2 3 B40L45 A Y WW G AKA MAXIMUM RATINGS Please See the Table on the Following Page AYWW B40L45G AKA = Device Code = Assembly Location = Year = Work Week = Pb−Free Device = Polarity Designator ORDERING INFORMATION Device MBR40L45CTG Package Shipping TO−220 (Pb−Free) 50 Units/Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2008 May, 2008 − Rev. 1 1 Publication Order Number: MBR40L45CT/D MBR40L45CTG MAXIMUM RATINGS (Per Diode Leg) Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 V Average Rectified Forward Current (Rated VR) TC = 145°C IF(AV) 20 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) IFRM 40 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 200 A Operating Junction Temperature (Note 1) TJ −65 to +175 °C Storage Temperature Tstg −65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms > 400 > 8000 V Rating ESD Ratings: Machine Model = C Human Body Model = 3B THERMAL CHARACTERISTICS Maximum Thermal Resistance − Junction−to−Case − Junction−to−Ambient RqJC RqJA 1.9 72.9 °C/W ELECTRICAL CHARACTERISTICS (Per Diode Leg) Maximum Instantaneous Forward Voltage (Note 2) (IF = 20 A, TC = 25°C) (IF = 20 A, TC = 125°C) (IF = 40 A, TC = 25°C) (IF = 40 A, TC = 125°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 25°C) (Rated DC Voltage, TC = 125°C) iR V 0.50 0.48 0.63 0.68 mA 1.2 275 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2.0%. http://onsemi.com 2 MBR40L45CTG TYPICAL CHARACTERISTICS 1000 IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 1000 100 100 150°C 10 25°C 125°C 1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 125°C 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, MAXIMUM FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.6 1E+00 IR, MAXIMUM REVERSE CURRENT (A) 1E+00 IR, REVERSE CURRENT (A) 150°C 1E−01 150°C 1E−01 125°C 1E−02 125°C 1E−02 1E−03 1E−03 1E−04 0 5 10 25°C 1E−04 25°C 15 20 25 30 35 40 45 50 1E−05 0 5 10 VR, REVERSE VOLTAGE (V) 15 20 dc 40 35 Square Wave 30 25 20 15 10 5 0 80 90 30 35 40 Figure 4. Maximum Reverse Current 50 45 25 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current IF, AVERAGE FORWARD CURRENT (A) 1E−05 25°C 1 0.1 1.6 150°C 10 100 110 120 130 140 150 160 170 180 TC, CASE TEMPERATURE (°C) Figure 5. Current Derating for MBR40L45CTG http://onsemi.com 3 45 50 MBR40L45CTG R(t) TRANSIENT THERMAL RESISTANCE 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 10000 C, CAPACITANCE (pF) PFO, AVERAGE POWER DISSIPATION (W) TYPICAL CHARACTERISTICS Square Wave dc 0 5 10 15 20 25 30 35 25°C 1000 100 40 0 5 10 15 20 25 30 35 Io, AVERAGE FORWARD CURRENT (A) VR, REVERSE VOLTAGE (V) Figure 6. Forward Power Dissipation Figure 7. Capacitance 40 45 10 1 0.1 D = 0.5 0.2 0.1 0.05 0.01 0.01 P(pk) t1 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 T1, TIME (sec) Figure 8. Thermal Response Junction−to−Case for MBR40L45CTG http://onsemi.com 4 1 10 100 1000 MBR40L45CTG PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AF −T− B F SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 ANODE CATHODE ANODE CATHODE SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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