MBR120ESFT1 Surface Mount Schottky Power Rectifier Plastic SOD–123 Package . . . using the Schottky Barrier principle with a large area metal–to–silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are ac/dc and dc–dc converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical. These state–of–the–art devices have the following features: • • • • • • http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 20 VOLTS Guardring for Stress Protection Low Leakage 150°C Operating Junction Temperature Epoxy Meets UL94, V0 at 1/8″ Package Designed for Optimal Automated Board Assembly ESD Ratings: Machine Model, C ESD Ratings: Human Body Model, 3B SOD–123FL CASE 498 PLASTIC DEVICE MARKING Mechanical Characteristics • Reel Options: MBR120ESFT1 = 3,000 per 7″ reel/8 mm tape • • • • • • Reel Options: MBR120ESFT3 = 10,000 per 13″ reel/8 mm tape Device Marking: L2E Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy, Molded Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds L2ED L2E D = Specific Device Code = Date Code ORDERING INFORMATION Device Package MBR120ESFT1 SOD–123FL Shipping 3000/Tape & Reel MBR120ESFT3 SOD–123FL 10,000/Tape & Reel Semiconductor Components Industries, LLC, 2002 October, 2002 – Rev. 1 1 Publication Order Number: MBR120ESFT1/D MBR120ESFT1 MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 20 V IO 1.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TL = 125°C) IFRM 2.0 A Non–Repetitive Peak Surge Current (Non–Repetitive peak surge current, halfwave, single phase, 60 Hz) IFSM 40 A Storage Temperature Tstg –65 to 150 °C Operating Junction Temperature TJ –65 to 150 °C dv/dt 10,000 V/s Rtjl Rtjl Rtja Rtja 26 21 325 82 °C/W Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TL = 140°C) Voltage Rate of Change (Rated VR, TJ = 25°C) THERMAL CHARACTERISTICS Thermal Resistance – Junction–to–Lead (Note 1) Thermal Resistance – Junction–to–Lead (Note 2) Thermal Resistance – Junction–to–Ambient (Note 1) Thermal Resistance – Junction–to–Ambient (Note 2) 1. Mounted with minimum recommended pad size, PC Board FR4. 2. Mounted with 1 in. copper pad (Cu area 700 mm2). ELECTRICAL CHARACTERISTICS VF Maximum Instantaneous Forward Voltage (Note 3), See Figure 2 (IF = 0.1 A) (IF = 1.0 A) (IF = 2.0 A) IR Maximum Instantaneous Reverse Current (Note 3), See Figure 4 (VR = 20 V) (VR = 10 V) (VR = 5.0 V) TJ = 25°C TJ = 100°C 0.455 0.530 0.595 0.360 0.455 0.540 TJ = 25°C TJ = 100°C 10 1.0 0.5 1600 500 300 V A iF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD CURRENT (AMPS) 3. Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2%. 10 TJ = 150°C TJ = 25°C TJ = 100°C TJ = –40°C 1.0 0.1 0.2 0.4 0.6 0.8 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 10 TJ = 150°C TJ = 100°C 1.0 TJ = 25°C 0.1 0.2 0.4 0.6 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage http://onsemi.com 2 0.8 IR, REVERSE CURRENT (AMPS) 100E–3 100E–3 10E–3 1E–3 TJ = 150°C 100E–6 TJ = 100°C 1E–6 TJ = 25°C 5.0 10 15 TJ = 100°C 10E–6 TJ = 25°C 1E–6 20 10E–9 0 5.0 10 15 20 Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current 1.6 1.4 PFO, AVERAGE DISSIPATION (WATTS) VR, REVERSE VOLTAGE (VOLTS) dc freq = 20 kHz SQUARE WAVE 1.2 1.0 Ipk/Io = 0.8 Ipk/Io = 5 0.6 Ipk/Io = 10 0.4 Ipk/Io = 20 0.2 0 45 1E–3 VR, REVERSE VOLTAGE (VOLTS) 1.8 25 TJ = 150°C 100E–9 10E–9 0 10E–3 100E–6 10E–6 100E–9 IO, AVERAGE FORWARD CURRENT (AMPS) IR, MAXIMUM REVERSE CURRENT (AMPS) MBR120ESFT1 65 85 105 125 145 165 0.7 dc 0.6 Ipk/Io = SQUARE WAVE 0.5 Ipk/Io = 5 0.4 Ipk/Io = 10 0.3 Ipk/Io = 20 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Forward Power Dissipation http://onsemi.com 3 1.6 MBR120ESFT1 155 1000 TJ, DERATED OPERATING TEMPERATURE (°C) C, CAPACITANCE (pF) 153 TJ = 25°C 100 151 RJA = 25.6°C/W 149 130°C/W 147 145 235°C/W 143 141 324.9°C/W 139 400°C/W 137 10 135 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 0 2.0 4.0 6.0 8.0 10 12 14 16 18 VR, REVERSE VOLTAGE (VOLTS) VR, DC REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating* 20 r(t), TRANSIENT THERMAL RESISTANCE * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ = TJmax – r(t)(Pf + Pr) where TJ may be calculated from the equation: r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax – r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. 1000 D = 0.5 100 0.2 0.1 0.05 P(pk) 10 0.01 t1 t2 DUTY CYCLE, D = t1/t2 1 SINGLE PULSE JA = 321.8 °C/W Test Type > Min Pad < Die Size 38x38 @ 75% mils 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 t1, TIME (sec) Figure 9. Thermal Response http://onsemi.com 4 1 10 100 1000 MBR120ESFT1 PACKAGE DIMENSIONS SOD–123LF CASE 498–01 ISSUE O B L E D A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH. 4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP. H POLARITY INDICATOR OPTIONAL AS NEEDED C K L J http://onsemi.com 5 DIM A B C D E H J K L MILLIMETERS MIN MAX 1.50 1.80 2.50 2.90 0.90 1.00 0.70 1.10 0.55 0.95 0.00 0.10 0.10 0.20 3.40 3.80 0° 8° INCHES MIN MAX 0.059 0.071 0.098 0.114 0.035 0.039 0.028 0.043 0.022 0.037 0.000 0.004 0.004 0.008 0.134 0.150 0° 8° MBR120ESFT1 RECOMMENDED FOOTPRINT FOR SOD–123FL ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ 0.91 0.036 2.36 0.093 4.19 0.165 SOD–123 http://onsemi.com 6 1.22 0.048 mm inches MBR120ESFT1 Notes http://onsemi.com 7 MBR120ESFT1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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