SS22, SS24 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package These devices employ the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features • • • • • Compact Package with J−Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guardring for Over−Voltage Protection Low Forward Voltage Drop Pb−Free Package is Available http://onsemi.com SCHOTTKY BARRIER RECTIFIER 2 AMPERES 20, 40 VOLTS Mechanical Characteristics • • • • • • • • Case: Molded Epoxy Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 95 mg (approximately) Cathode Polarity Band Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Available in 12 mm Tape, 2500 Units per 13 in Reel, Add “T3” Suffix to Part Number Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ESD Ratings: Machine Model = C ESD Ratings: Human Body Model = 3B SMB CASE 403A PLASTIC MARKING DIAGRAM AYWW SS2xG G SS2x = Specific Device Code x = 2 or 4 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping † SS22T3 SMB 2500/Tape & Reel SS24T3 SMB 2500/Tape & Reel SMB (Pb−Free) 2500/Tape & Reel Device SS24T3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 July, 2005 − Rev. 2 1 Publication Order Number: SS24/D SS22, SS24 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol SS22 SS24 Average Rectified Forward Current (At Rated VR, TL = 100°C) Value VRRM VRWM VR Unit V 20 40 IO 2.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = 105°C) IFRM 3.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 75 A Tstg, TC −55 to +150 °C TJ −55 to +125 °C dv/dt 10,000 V/ms Storage/Operating Case Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25°C) Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Value RqJL 24 RqJA 80 Unit °C/W Thermal Resistance, Junction−to−Lead (Note 1) Thermal Resistance, Junction−to−Ambient (Note 2) ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 3) see Figure 2 Maximum Instantaneous Reverse Current (Note 3) see Figure 4 vF (iF = 2.0 A) IR (VR = 40 V) 1. Mounted with minimum recommended pad size, PC Board FR4. 2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. 3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 TJ = 25°C TJ = 125°C 0.50 0.46 TJ = 25°C TJ = 100°C 0.4 5.7 V mA 100 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) SS22, SS24 10 TJ = 125°C 25°C 1.0 100°C −40 °C 0.1 0.1 0.3 0.5 0.7 0.9 100°C 25°C 0.1 0.3 0.1 0.5 0.9 0.7 Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 100E−3 10E−3 IR , MAXIMUM REVERSE CURRENT (AMPS) IR , REVERSE CURRENT (AMPS) TJ = 125°C 1.0 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) TJ = 125°C 1.0E−3 100°C 100E−6 10E−3 TJ = 125°C 1.0E−3 100°C 100E−6 10E−6 25°C 10 0 20 30 40 1.0E−6 0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current 2.5 FREQ = 20 kHz dc 2.0 SQUARE WAVE 1.5 Ipk/Io = p Ipk/Io = 5.0 1.0 Ipk/Io = 10 Ipk/Io = 20 0.5 0 25 25°C 10E−6 PFO , AVERAGE POWER DISSIPATION (WATTS) IO , AVERAGE FORWARD CURRENT (AMPS) 10 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 100E−3 1.0E−6 100 45 65 85 105 125 1.2 dc 1.0 SQUARE WAVE Ipk/Io = p 0.8 Ipk/Io = 5.0 0.6 Ipk/Io = 10 0.4 Ipk/Io = 20 0.2 0 0 0.5 1.0 1.5 2.0 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Forward Power Dissipation http://onsemi.com 3 2.5 SS22, SS24 TJ , DERATED OPERATING TEMPERATURE (° C) 1000 C, CAPACITANCE (pF) TJ = 25°C 100 10 R T, TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0 5.0 10 15 20 25 30 35 40 125 Rtja = 24°C/W 115 43°C/W 105 63°C/W 95 80°C/W 85 93°C/W 75 65 0 5.0 10 15 20 25 30 35 40 VR, REVERSE VOLTAGE (VOLTS) VR, DC REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating* * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ may be calculated from the equation: TJ = TJmax − r(t)(Pf + Pr) where r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. 1.0E+00 50% 1.0E−01 20% 10% 5.0% 1.0E−02 2.0% 1.0% 1.0E−03 Rtjl(t) = Rtjl*r(t) 1.0E−04 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 10 100 1000 R T, TRANSIENT THERMAL RESISTANCE (NORMALIZED) t, TIME (s) 1.0E+00 1.0E−01 Figure 9. Thermal Response — Junction to Case 50% 20% 10% 5.0% 1.0E−02 2.0% 1.0E−03 1.0% Rtjl(t) = Rtjl*r(t) 1.0E−04 0.00001 0.0001 0.001 0.01 0.1 1.0 t, TIME (s) Figure 10. Thermal Response — Junction to Ambient http://onsemi.com 4 SS22, SS24 PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE E HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. E b DIM A A1 b c D E HE L L1 D MIN 1.90 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.13 2.41 0.10 0.15 2.03 2.11 0.23 0.30 3.56 3.81 4.32 4.57 5.44 5.59 1.02 1.27 0.51 REF A L L1 A1 c SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MIN 0.075 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.084 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.095 0.006 0.083 0.012 0.150 0.180 0.220 0.050 SS22, SS24 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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