MBRA340T3G, NRVBA340T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system. http://onsemi.com SCHOTTKY BARRIER RECTIFIER 3.0 AMPERES 40 VOLTS Features • • • • • • • Small Compact Surface Mountable Package with J−Bent Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop Guardring for Stress Protection NRVBA Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant* SMA CASE 403D STYLE 1 1 Cathode MARKING DIAGRAM Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 70 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • • 2 Anode Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Polarity: Cathode Lead Indicated by Polarity Band ESD Ratings: ♦ Machine Model = C ♦ Human Body Model = 3B Device Meets MSL 1 Requirements A34 AYWWG A34 A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Package Shipping† MBRA340T3G SMA (Pb−Free) 5,000 / Tape & Reel ** NRVBA340T3G SMA (Pb−Free) 5,000 / Tape & Reel ** Device ** 12 mm Tape, 13” Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 September, 2013 − Rev. 6 1 Publication Order Number: MBRA340T3/D MBRA340T3G, NRVBA340T3G MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 40 V Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TL = 100°C) IO Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Storage/Operating Case Temperature A 3.0 A 100 Tstg, TC −55 to +150 °C TJ −55 to +150 °C Operating Junction Temperature (Note 1) Voltage Rate of Change (Rated VR, TJ = 25°C) dv/dt V/ms 10,000 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit RθJL RθJA 15 81 °C/W Thermal Resistance − Junction−to−Lead (Note 2) Thermal Resistance − Junction−to−Ambient (Note 2) 2. Mounted on 2″ Square PC Board with 1″ Square Total Pad Size, PC Board FR4. ELECTRICAL CHARACTERISTICS Symbol Characteristic Value VF Maximum Instantaneous Forward Voltage (Note 3) TJ = 25°C TJ = 100°C 0.450 0.390 TJ = 25°C TJ = 100°C 0.3 15 (IF = 3.0 A) Maximum Instantaneous Reverse Current IR Unit (VR = 40 V) Volts mA 3. Pulse Test: Pulse Width ≤ 250 μs, Duty Cycle ≤ 2.0%. TYPICAL CHARACTERISTICS 1 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 TJ = 125°C 0.1 0.10 TJ = 100°C 0.20 TJ = 25°C 0.30 0.40 TJ = −55°C 0.50 1 0.1 0.10 0.60 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) TJ = 125°C TJ = 100°C TJ = −55°C TJ = 25°C 0.20 0.30 0.40 0.50 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage http://onsemi.com 2 0.60 IR, REVERSE CURRENT (AMPS) 100E−3 IR, MAXIMUM REVERSE CURRENT (AMPS) MBRA340T3G, NRVBA340T3G 100E−3 TJ = 125°C 10E−3 1E−3 TJ = 100°C 100E−6 10E−6 TJ = 25°C 1E−6 10E−3 TJ = 100°C 1E−3 TJ = −55°C 10E−9 1E−9 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) TJ = −55°C 10E−6 40 1E−6 0 5 dc freq = 20 kHz 4 3.5 3 2.5 2 1.5 SQUARE WAVE Ipk/IO = p Ipk/IO = 5 Ipk/IO = 10 1 0.5 0 25 50 75 100 125 150 TL, LEAD TEMPERATURE (°C) 1.6 SQUARE WAVE 1.4 TJ, DERATED OPERATING TEMPERATURE (°C) TJ = 25 °C 0 5 dc 1.2 1.0 0.8 Ipk/IO = p 0.6 Ipk/IO = 5 0.4 Ipk/IO = 10 0.2 0 Ipk/IO = 20 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 IO, AVERAGE FORWARD CURRENT (AMPS) Figure 6. Forward Power Dissipation C, CAPACITANCE (pF) 100 40 1.8 Figure 5. Current Derating 1000 10 20 30 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Maximum Reverse Current PFO, AVERAGE POWER DISSIPATION (WATTS) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 3. Typical Reverse Current 4.5 TJ = 25°C 100E−6 100E−9 100E−12 TJ = 125°C 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) 35 40 125 RqJA = 22 °C/W 115 105 RqJA = 43 °C/W 95 RqJA = 63 °C/W 85 RqJA = 81 °C/W 75 RqJA = 96 °C/W 65 55 0 Figure 7. Capacitance 5 35 10 15 20 25 30 VR, DC REVERSE VOLTAGE (VOLTS) Figure 8. Typical Operating Temperature Derating http://onsemi.com 3 40 R(t), TRANSIENT THERMAL RESISTANCE (°C/W) MBRA340T3G, NRVBA340T3G 100 D = 0.5 0.2 0.1 10 0.05 0.02 0.01 1 SINGLE PULSE 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 100 1000 t, TIME (S) R(t), TRANSIENT THERMAL RESISTANCE (°C/W) Figure 9. Thermal Response, Junction−to−Ambient (min pad) 100 D = 0.5 0.2 10 0.1 0.05 0.02 1 0.1 0.01 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 1 10 t, TIME (S) Figure 10. Thermal Response, Junction to Ambient (1 inch pad) http://onsemi.com 4 MBRA340T3G, NRVBA340T3G PACKAGE DIMENSIONS SMA CASE 403D−02 ISSUE F HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 403D−01 OBSOLETE, NEW STANDARD IS 403D−02. E b DIM A A1 b c D E HE L D POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) MIN 1.97 0.05 1.27 0.15 2.29 4.06 4.83 0.76 MILLIMETERS NOM MAX 2.10 2.20 0.10 0.15 1.45 1.63 0.28 0.41 2.60 2.92 4.32 4.57 5.21 5.59 1.14 1.52 MIN 0.078 0.002 0.050 0.006 0.090 0.160 0.190 0.030 INCHES NOM 0.083 0.004 0.057 0.011 0.103 0.170 0.205 0.045 MAX 0.087 0.006 0.064 0.016 0.115 0.180 0.220 0.060 STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE A L c A1 SOLDERING FOOTPRINT* 4.0 0.157 2.0 0.0787 2.0 0.0787 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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