3EZ4.3D5 Series
3 Watt DO−41 SurmeticE 30
Zener Voltage Regulators
This is a complete series of 3 Watt Zener diodes with limits and
excellent operating characteristics that reflect the superior capabilities
of silicon−oxide passivated junctions. All this in an axial−lead,
transfer−molded plastic package that offers protection in all common
environmental conditions.
Cathode
Specification Features:
•
•
•
•
•
w
http://onsemi.com
Anode
Zener Voltage Range − 4.3 V to 330 V
ESD Rating of Class 3 (>16 KV) per Human Body Model
Surge Rating of 98 W @ 1 ms
Maximum Limits Guaranteed on up to Six Electrical Parameters
Package No Larger than the Conventional 1 Watt Package
These devices are available in Pb−free package(s). Specifications herein
apply to both standard and Pb−free devices. Please see our website at
www.onsemi.com for specific Pb−free orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
AXIAL LEAD
CASE 59
PLASTIC
Mechanical Characteristics:
CASE: Void free, transfer−molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
MARKING DIAGRAM
readily solderable
L
3EZx
xxD5
YYWW
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16″ from the case for 10 seconds
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Max. Steady State Power Dissipation
@ TL = 75°C, Lead Length = 3/8″
Derate above 75°C
PD
3
W
24
mW/°C
Steady State Power Dissipation
@ TA = 50°C
Derate above 50°C
PD
1
W
6.67
mW/°C
−65 to
+200
°C
Operating and Storage
Temperature Range
TJ, Tstg
L
= Assembly Location
3EZxxxD5 = Device Code
= (See Table Next Page)
YY
= Year
WW
= Work Week
ORDERING INFORMATION
Device
3EZxxxD5
Package
Shipping
Axial Lead
2000 Units/Box
Axial Lead
6000/Tape & Reel
{
Axial Lead
2000/Tape & Reel
3EZxxxD5RR2 }
Axial Lead
2000/Tape & Reel
3EZxxxD5RL*
3EZxxxD5RR1
†Polarity band up with cathode lead off first
} Polarity band down with cathode lead off first
*3EZ8.2D5 and 3EZ220D5 Not Available
6000/Tape & Reel
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 4
1
in
Publication Order Number:
3EZ4.3D5/D
3EZ4.3D5 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
I
otherwise noted, VF = 1.5 V Max @ IF = 200 mA for all types)
Symbol
IF
Parameter
VZ
Reverse Zener Voltage @ IZT
IZT
Reverse Current
ZZT
Maximum Zener Impedance @ IZT
IZK
Reverse Current
ZZK
Maximum Zener Impedance @ IZK
IR
Reverse Leakage Current @ VR
VR
Breakdown Voltage
IF
Forward Current
VF
Forward Voltage @ IF
IZM
Maximum DC Zener Current
IR
Surge Current @ TA = 25°C
VZ VR
V
IR VF
IZT
Zener Voltage Regulator
http://onsemi.com
2
3EZ4.3D5 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.5 V Max @ IF = 200 mA for all types)
Zener Voltage (Note 2)
VZ (Volts)
Zener Impedance (Note 3)
@ IZT
ZZT @ IZT
Leakage Current
ZZK @ IZK
IR @ VR
IZM
IR
(Note 4)
Device
(Note 1)
Device
Marking
Min
Nom
Max
mA
W
W
mA
mA Max
Volts
mA
mA
3EZ4.3D5
3EZ6.2D5
3EZ8.2D5*
3EZ10D5
3EZ13D5
3EZ4.3D5
3EZ6.2D5
3EZ8.2D5*
3EZ10D5
3EZ13D5
4.09
5.89
7.79
9.50
12.35
4.3
6.2
8.2
10
13
4.52
6.51
8.61
10.5
13.65
174
121
91
75
58
4.5
1.5
2.3
3.5
4.5
400
700
700
700
700
1
1
0.5
0.25
0.25
30
5
5
3
0.5
1
3
6
7.6
9.9
590
435
330
270
208
4.1
3.1
2.44
2.0
1.54
3EZ15D5
3EZ16D5
3EZ18D5
3EZ24D5
3EZ36D5
3EZ15D5
3EZ16D5
3EZ18D5
3EZ24D5
3EZ36D5
14.25
15.2
17.1
22.8
34.2
15
16
18
24
36
15.75
16.8
18.9
25.2
37.8
50
47
42
31
21
5.5
5.5
6.0
9.0
22
700
700
750
750
1000
0.25
0.25
0.25
0.25
0.25
0.5
0.5
0.5
0.5
0.5
11.4
12.2
13.7
18.2
27.4
180
169
150
112
75
1.33
1.25
1.11
0.83
0.56
3EZ39D5
3EZ220D5*
3EZ240D5
3EZ330D5
3EZ39D5
3EZ220D5*
3EZ240D5
3EZ330D5
37.05
209
228
313.5
39
220
240
330
40.95
231
252
346.5
19
3.4
3.1
2.3
28
1600
1700
2200
1000
9000
9000
9000
0.25
0.25
0.25
0.25
0.5
1
1
1
29.7
167
182
251
69
12
11
8
0.51
0.09
0.09
0.06
1. TOLERANCE AND TYPE NUMBER DESIGNATION
Tolerance designation − device tolerance of ±5% are indicated by a “5” suffix.
2. ZENER VOLTAGE (VZ) MEASUREMENT
ON Semiconductor guarantees the zener voltage when measured at 40 ms ±10 ms, 3/8″ from the diode body. And an ambient temperature
of 25°C (+8°C, −2°C)
3. ZENER IMPEDANCE (ZZ) DERIVATION
The zener impedance is derived from 60 seconds AC voltage, which results when an AC current having an rms value equal to 10% of the
DC zener current (IZT or IZK) is superimposed on IZT or IZK.
4. SURGE CURRENT (IR) NON−REPETITIVE
The rating listed in the electrical characteristics table is maximum peak, non−repetitive, reverse surge current of 1/2 square wave or
equivalent sine wave pulse of 1/120 second duration superimposed on the test current, IZT, per JEDEC standards. However, actual device
capability is as described in Figure 3 of the General Data sheet for Surmetic 30s.
*Not Available in the 6000/Tape & Reel.
PD, STEADY STATE POWER
DISSIPATION (WATTS)
5
L = 1/8″
L = LEAD LENGTH
TO HEAT SINK
4
L = 3/8″
3
2
L = 1″
1
0
0
20
40
60
80 100 120 140 160
TL, LEAD TEMPERATURE (°C)
180
Figure 1. Power Temperature Derating Curve
http://onsemi.com
3
200
3EZ4.3D5 Series
θJL(t, D) TRANSIENT THERMAL RESISTANCE
JUNCTION-TO-LEAD ( °C/W)
30
20
10
7
5
3
2
1
0.7
0.5
D =0.5
0.2
0.1
t2
DUTY CYCLE, D =t1/t2
0.02
0.01
NOTE: BELOW 0.1 SECOND, THERMAL
RESPONSE CURVE IS APPLICABLE
TO ANY LEAD LENGTH (L).
D=0
0.3
0.0001 0.0002
t1
PPK
0.05
0.0005
0.001
0.002
0.005
0.01
0.02
0.05
t, TIME (SECONDS)
0.1
0.2
SINGLE PULSE DTJL = qJL (t)PPK
REPETITIVE PULSES DTJL = qJL (t,D)PPK
0.5
1
2
5
10
Figure 2. Typical Thermal Response L, Lead Length = 3/8 Inch
IR , REVERSE LEAKAGE (μ Adc) @ VR
AS SPECIFIED IN ELEC. CHAR. TABLE
PPK , PEAK SURGE POWER (WATTS)
1K
RECTANGULAR
NONREPETITIVE
WAVEFORM
TJ=25°C PRIOR
TO INITIAL PULSE
500
300
200
100
50
30
0.2 0.3 0.5
1
2 3
5
10
PW, PULSE WIDTH (ms)
20 30 50
100
TA = 125°C
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0005
0.0003
20
10
0.1
3
2
1
0.5
TA = 125°C
1
Figure 3. Maximum Surge Power
2
5
10
20
50 100
NOMINAL VZ (VOLTS)
200
400
Figure 4. Typical Reverse Leakage
http://onsemi.com
4
1000
3EZ4.3D5 Series
APPLICATION NOTE
DTJL is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for a train of
power pulses (L = 3/8 inch) or from Figure 10 for dc power.
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, TL, should be determined from:
DTJL = qJL PD
For worst-case design, using expected limits of IZ, limits
of PD and the extremes of TJ (DTJ) may be estimated.
Changes in voltage, VZ, can then be found from:
TL = qLA PD + TA
qLA is the lead-to-ambient thermal resistance (°C/W) and
PD is the power dissipation. The value for qLA will vary and
depends on the device mounting method. qLA is generally
30−40°C/W for the various clips and tie points in common
use and for printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of
pulsed operation once steady-state conditions are achieved.
Using the measured value of TL, the junction temperature
may be determined by:
DV = qVZ DTJ
qVZ, the zener voltage temperature coefficient, is found
from Figures 5 and 6.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 2 should not be used to compute surge
capability. Surge limitations are given in Figure 3. They are
lower than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots resulting in device
degradation should the limits of Figure 3 be exceeded.
TJ = TL + DTJL
http://onsemi.com
5
3EZ4.3D5 Series
TEMPERATURE COEFFICIENT RANGES
10
1000
8
6
4
RANGE
2
0
−2
−4
θ VZ, TEMPERATURE COEFFICIENT (mV/ °C) @ I ZT
θ VZ, TEMPERATURE COEFFICIENT (mV/ °C) @ I ZT
(90% of the Units are in the Ranges Indicated)
3
4
5
6
7
8
9
10
VZ, ZENER VOLTAGE @ IZT (VOLTS)
11
12
500
200
100
50
20
10
10
20
50
100
200
400
VZ, ZENER VOLTAGE @ IZT (VOLTS)
Figure 5. Units To 12 Volts
1000
Figure 6. Units 10 To 400 Volts
ZENER VOLTAGE versus ZENER CURRENT
100
100
50
30
20
50
30
20
IZ , ZENER CURRENT (mA)
IZ, ZENER CURRENT (mA)
(Figures 7, 8 and 9)
10
5
3
2
1
0.5
0.3
0.2
0.1
0
1
2
3
4
5
6
7
VZ, ZENER VOLTAGE (VOLTS)
8
9
10
5
3
2
1
0.5
0.3
0.2
0.1
10
0
10
20
10
IZ , ZENER CURRENT (mA)
5
2
1
0.5
0.2
0.1
100
150
200
250
300
350
VZ, ZENER VOLTAGE (VOLTS)
80
90
100
Figure 8. VZ = 12 thru 82 Volts
400
θJL, JUNCTION-TO-LEAD THERMAL RESISTANCE (° C/W)
Figure 7. VZ = 3.3 thru 10 Volts
30
40
50
60
70
VZ, ZENER VOLTAGE (VOLTS)
80
70
60
50
L
40
L
30
TL
20
PRIMARY PATH OF
CONDUCTION IS THROUGH
THE CATHODE LEAD
10
0
0
Figure 9. VZ = 100 thru 400 Volts
1/8
1/4
3/8
1/2
5/8
3/4
L, LEAD LENGTH TO HEAT SINK (INCH)
7/8
Figure 10. Typical Thermal Resistance
http://onsemi.com
6
1
3EZ4.3D5 Series
OUTLINE DIMENSIONS
Zener Voltage Regulators − Axial Leaded
3 Watt DO−41 SurmeticE 30
PLASTIC DO−41
CASE 59−10
ISSUE S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 59−04 OBSOLETE, NEW STANDARD 59−09.
4. 59−03 OBSOLETE, NEW STANDARD 59−10.
5. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO−41 OUTLINE SHALL APPLY
6. POLARITY DENOTED BY CATHODE BAND.
7. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
B
K
D
F
DIM
A
B
D
F
K
A
F
INCHES
MIN
MAX
0.161
0.205
0.079
0.106
0.028
0.034
−−−
0.050
1.000
−−−
MILLIMETERS
MIN
MAX
4.10
5.20
2.00
2.70
0.71
0.86
−−−
1.27
25.40
−−−
K
Surmetic is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
http://onsemi.com
7
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
3EZ4.3D5/D