1N5913B Series 3 Watt DO-41 Surmetic 30 Zener Voltage Regulators This is a complete series of 3 Watt Zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of silicon–oxide passivated junctions. All this in an axial–lead, transfer–molded plastic package that offers protection in all common environmental conditions. http://onsemi.com Specification Features: • • • • • Cathode Zener Voltage Range – 3.3 V to 200 V ESD Rating of Class 3 (>16 KV) per Human Body Model Surge Rating of 98 W @ 1 ms Maximum Limits Guaranteed on up to Six Electrical Parameters Package No Larger than the Conventional 1 Watt Package Mechanical Characteristics: CASE: Void free, transfer–molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are Anode AXIAL LEAD CASE 59 PLASTIC readily solderable MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 230°C, 1/16″ from the case for 10 seconds POLARITY: Cathode indicated by polarity band MOUNTING POSITION: Any MARKING DIAGRAM L 1N59 xxB YYWW MAXIMUM RATINGS Rating Symbol Value Unit Max. Steady State Power Dissipation @ TL = 75°C, Lead Length = 3/8″ Derate above 75°C PD 3 W 24 mW/°C Steady State Power Dissipation @ TA = 50°C Derate above 50°C PD 1 W 6.67 mW/°C –65 to +200 °C Operating and Storage Temperature Range TJ, Tstg L 1N59xxB YY WW = Assembly Location = Device Code = (See Table Next Page) = Year = Work Week ORDERING INFORMATION Device 1N59xxB Package Shipping Axial Lead 2000 Units/Box Axial Lead 6000/Tape & Reel Axial Lead 2000/Tape & Reel 1N59xxBRR2 Axial Lead 2000/Tape & Reel 1N59xxBRL 1N59xxBRR1 Polarity band up with cathode lead off first Polarity band down with cathode lead off first Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 May, 2001 – Rev. 1 1 Publication Order Number: 1N5913B/D 1N5913B Series ELECTRICAL CHARACTERISTICS I (TL = 30°C unless otherwise noted, VF = 1.5 V Max @ IF = 200 mAdc for all types) IF Parameter Symbol VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK IR Reverse Leakage Current @ VR VR Breakdown Voltage IF Forward Current VF Forward Voltage @ IF IZM Maximum DC Zener Current VZ VR V IR VF IZT Zener Voltage Regulator http://onsemi.com 2 1N5913B Series ELECTRICAL CHARACTERISTICS (TL = 30°C unless otherwise noted, VF = 1.5 V Max @ IF = 200 mAdc for all types) Zener Voltage (Note 2.) VZ (Volts) Zener Impedance (Note 3.) Leakage Current @ IZT ZZT @ IZT Max mA mA µA Max Volts mA 3.3 4.7 5.6 6.2 6.8 3.47 4.94 5.88 6.51 7.14 113.6 79.8 66.9 60.5 55.1 10 5 2 2 2.5 500 500 250 200 200 1 1 1 1 1 100 5 5 5 5 1 1.5 3 4 5.2 454 319 267 241 220 7.79 8.65 9.50 10.45 11.40 8.2 9.1 10 11 12 8.61 9.56 10.50 11.55 12.60 45.7 41.2 37.5 34.1 31.2 3.5 4 4.5 5.5 6.5 400 500 500 550 550 0.5 0.5 0.25 0.25 0.25 5 5 5 1 1 6.5 7 8 8.4 9.1 182 164 150 136 125 1N5929B 1N5930B 1N5931B 1N5932B 1N5933B 14.25 15.20 17.10 19.00 20.90 15 16 18 20 22 15.75 16.80 18.90 21.00 23.10 25.0 23.4 20.8 18.7 17.0 9 10 12 14 17.5 600 600 650 650 650 0.25 0.25 0.25 0.25 0.25 1 1 1 1 1 11.4 12.2 13.7 15.2 16.7 100 93 83 75 68 1N5934B 1N5935B 1N5936B 1N5937B 1N5938B 1N5934B 1N5935B 1N5936B 1N5937B 1N5938B 22.80 25.65 28.50 31.35 34.20 24 27 30 33 36 25.20 28.35 31.50 34.65 37.80 15.6 13.9 12.5 11.4 10.4 19 23 28 33 38 700 700 750 800 850 0.25 0.25 0.25 0.25 0.25 1 1 1 1 1 18.2 20.6 22.8 25.1 27.4 62 55 50 45 41 1N5940B 1N5941B 1N5942B 1N5943B 1N5944B 1N5940B 1N5941B 1N5942B 1N5943B 1N5944B 40.85 44.65 48.45 53.20 58.90 43 47 51 56 62 45.15 49.35 53.55 58.80 65.10 8.7 8.0 7.3 6.7 6.0 53 67 70 86 100 950 1000 1100 1300 1500 0.25 0.25 0.25 0.25 0.25 1 1 1 1 1 32.7 35.8 38.8 42.6 47.1 34 31 29 26 24 1N5945B 1N5946B 1N5947B 1N5948B 1N5950B 1N5945B 1N5946B 1N5947B 1N5948B 1N5950B 64.60 71.25 77.90 86.45 104.5 68 75 82 91 110 71.40 78.75 86.10 95.55 115.5 5.5 5.0 4.6 4.1 3.4 120 140 160 200 300 1700 2000 2500 3000 4000 0.25 0.25 0.25 0.25 0.25 1 1 1 1 1 51.7 56 62.2 69.2 83.6 22 20 18 16 13 1N5951B 1N5952B 1N5953B 1N5954B 1N5955B 1N5951B 1N5952B 1N5953B 1N5954B 1N5955B 114 123.5 142.5 152 171 120 130 150 160 180 126 136.5 157.5 168 189 3.1 2.9 2.5 2.3 2.1 380 450 600 700 900 4500 5000 6000 6500 7000 0.25 0.25 0.25 0.25 0.25 1 1 1 1 1 91.2 98.8 114 121.6 136.8 12 11 10 9 8 1N5956B 1N5956B 190 200 210 1.9 1200 8000 0.25 1 152 7 Device (Note 1.) Device Marking Min Nom 1N5913B 1N5917B 1N5919B 1N5920B 1N5921B 1N5913B 1N5917B 1N5919B 1N5920B 1N5921B 3.14 4.47 5.32 5.89 6.46 1N5923B 1N5924B 1N5925B 1N5926B 1N5927B 1N5923B 1N5924B 1N5925B 1N5926B 1N5927B 1N5929B 1N5930B 1N5931B 1N5932B 1N5933B ZZK @ IZK IR @ VR IZM 1. TOLERANCE AND TYPE NUMBER DESIGNATION Tolerance designation – device tolerance of ±5% are indicated by a “B” suffix. 2. ZENER VOLTAGE (VZ) MEASUREMENT ON Semiconductor guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (TL) at 30°C ±1°C, 3/8″ from the diode body. 3. ZENER IMPEDANCE (ZZ) DERIVATION The zener impedance is derived from 60 seconds AC voltage, which results when an AC current having an rms value equal to 10% of the DC zener current (IZT or IZK) is superimposed on IZT or IZK. http://onsemi.com 3 PD, STEADY STATE DISSIPATION (WATTS) 1N5913B Series 5 L = LEAD LENGTH TO HEAT SINK L = 1/8″ 4 L = 3/8″ 3 2 L = 1″ 1 0 0 20 40 60 80 100 120 140 160 TL, LEAD TEMPERATURE (°C) 180 200 Figure 1. Power Temperature Derating Curve θJL(t, D) TRANSIENT THERMAL RESISTANCE JUNCTIONTOLEAD (°C/W) 30 20 10 7 5 3 2 1 0.7 0.5 D =0.5 0.2 0.1 t2 DUTY CYCLE, D =t1/t2 0.02 0.01 NOTE: BELOW 0.1 SECOND, THERMAL RESPONSE CURVE IS APPLICABLE TO ANY LEAD LENGTH (L). D=0 0.3 0.0001 0.0002 t1 PPK 0.05 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 t, TIME (SECONDS) 0.1 0.2 SINGLE PULSE ∆TJL = θJL (t)PPK REPETITIVE PULSES ∆TJL = θJL (t,D)PPK 0.5 1 2 5 10 PPK , PEAK SURGE POWER (WATTS) 1K IR , REVERSE LEAKAGE (µ Adc) @ VR AS SPECIFIED IN ELEC. CHAR. TABLE Figure 2. Typical Thermal Response L, Lead Length = 3/8 Inch RECTANGULAR NONREPETITIVE WAVEFORM TJ=25°C PRIOR TO INITIAL PULSE 500 300 200 100 50 30 20 10 0.1 0.2 0.3 0.5 1 2 3 5 10 PW, PULSE WIDTH (ms) 20 30 50 3 2 1 0.5 0.02 0.01 0.005 0.002 0.001 0.0005 0.0003 100 TA = 125°C 0.2 0.1 0.05 TA = 125°C 1 Figure 3. Maximum Surge Power 2 5 10 20 50 100 NOMINAL VZ (VOLTS) 200 400 Figure 4. Typical Reverse Leakage http://onsemi.com 4 1000 1N5913B Series APPLICATION NOTE ∆TJL is the increase in junction temperature above the lead temperature and may be found from Figure 2 for a train of power pulses (L = 3/8 inch) or from Figure 10 for dc power. Since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. The following procedure is recommended: Lead Temperature, TL, should be determined from: ∆TJL = θJL PD For worst-case design, using expected limits of IZ, limits of PD and the extremes of TJ (∆TJ) may be estimated. Changes in voltage, VZ, can then be found from: TL = θLA PD + TA θLA is the lead-to-ambient thermal resistance (°C/W) and PD is the power dissipation. The value for θLA will vary and depends on the device mounting method. θLA is generally 30–40°C/W for the various clips and tie points in common use and for printed circuit board wiring. The temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by: ∆V = θVZ ∆TJ θVZ, the zener voltage temperature coefficient, is found from Figures 5 and 6. Under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. For best regulation, keep current excursions as low as possible. Data of Figure 2 should not be used to compute surge capability. Surge limitations are given in Figure 3. They are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots resulting in device degradation should the limits of Figure 3 be exceeded. TJ = TL + ∆TJL http://onsemi.com 5 1N5913B Series TEMPERATURE COEFFICIENT RANGES 10 1000 8 6 4 RANGE 2 0 -2 -4 θ VZ, TEMPERATURE COEFFICIENT (mV/ °C) @ I ZT θ VZ, TEMPERATURE COEFFICIENT (mV/ °C) @ I ZT (90% of the Units are in the Ranges Indicated) 3 4 5 6 7 8 9 10 VZ, ZENER VOLTAGE @ IZT (VOLTS) 11 12 500 200 100 50 20 10 10 20 50 100 200 400 VZ, ZENER VOLTAGE @ IZT (VOLTS) Figure 5. Units To 12 Volts 1000 Figure 6. Units 10 To 400 Volts ZENER VOLTAGE versus ZENER CURRENT 100 50 30 20 50 30 20 IZ , ZENER CURRENT (mA) IZ, ZENER CURRENT (mA) (Figures 7, 8 and 9) 100 10 5 3 2 1 0.5 0.3 0.2 0.1 0 1 2 3 4 5 6 7 VZ, ZENER VOLTAGE (VOLTS) 8 9 10 5 3 2 1 0.5 0.3 0.2 0.1 10 0 10 20 Figure 7. VZ = 3.3 thru 10 Volts 2 1 0.5 0.2 200 250 300 350 VZ, ZENER VOLTAGE (VOLTS) 400 θJL, JUNCTIONTOLEAD THERMAL RESISTANCE (° C/W) IZ , ZENER CURRENT (mA) 5 150 80 90 100 Figure 8. VZ = 12 thru 82 Volts 10 0.1 100 30 40 50 60 70 VZ, ZENER VOLTAGE (VOLTS) 80 70 60 50 L 40 30 TL 20 PRIMARY PATH OF CONDUCTION IS THROUGH THE CATHODE LEAD 10 0 L 0 Figure 9. VZ = 100 thru 400 Volts 1/8 1/4 3/8 1/2 5/8 3/4 L, LEAD LENGTH TO HEAT SINK (INCH) 7/8 Figure 10. Typical Thermal Resistance http://onsemi.com 6 1 1N5913B Series OUTLINE DIMENSIONS Zener Voltage Regulators – Axial Leaded 3 Watt DO–41 Surmetic 30 PLASTIC DO–41 CASE 59–03 ISSUE M B D K NOTES: 1. ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO-41 OUTLINE SHALL APPLY. 2. POLARITY DENOTED BY CATHODE BAND. 3. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION. DIM A B D F K F A MILLIMETERS MIN MAX 4.07 5.20 2.04 2.71 0.71 0.86 --1.27 27.94 --- F K http://onsemi.com 7 INCHES MIN MAX 0.160 0.205 0.080 0.107 0.028 0.034 --0.050 1.100 --- 1N5913B Series Surmetic is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: [email protected] Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada N. American Technical Support: 800–282–9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor – European Support German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET) Email: ONlit–[email protected] French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET) Email: ONlit–[email protected] English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT) Email: [email protected] CENTRAL/SOUTH AMERICA: Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST) Email: ONlit–[email protected] Toll–Free from Mexico: Dial 01–800–288–2872 for Access – then Dial 866–297–9322 ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support Phone: 1–303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001–800–4422–3781 Email: ONlit–[email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: [email protected] ON Semiconductor Website: http://onsemi.com EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781 *Available from Germany, France, Italy, UK, Ireland For additional information, please contact your local Sales Representative. http://onsemi.com 8 1N5913B/D