MBR835, MBR840, MBR845 Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. • • • • • • • http://onsemi.com SCHOTTKY BARRIER RECTIFIERS 8.0 AMPERES High Current Capability Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Guard−Ring for Stress Protection Low Forward Voltage High Surge Capacity Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.1 gram (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • • • AXIAL LEAD CASE 267−05 (DO−201AD) STYLE 1 Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for 10 Seconds, 1/16″ from case Shipped in plastic bags, 500 per bag Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to the part number Polarity: Cathode indicated by Polarity Band ESD Protection: Human Body Model > 4000 V (Class 3) ESD Protection: Machine Model > 400 V (Class C) MARKING DIAGRAM MBR8xx MBR8xx = Device Code xx = 35, 40 or 45 MAXIMUM RATINGS Rating Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MBR835 MBR840 MBR845 VRRM VRWM VR Max V 35 40 45 Average Rectified Forward Current TL = 75°C (PsiJL = 12°C/W, P.C. Board Mounting, see Note 2) IO 8.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 140 A TJ, Tstg −65 to +125 °C dv/dt 10 V/ns Operating and Storage Junction Temperature Range (Reverse Voltage Applied) Voltage Rate of Change (Rated VR) © Semiconductor Components Industries, LLC, 2006 September, 2006 − Rev. 2 ORDERING INFORMATION Unit 1 Device Package Shipping MBR835 Axial Lead 500 Units/Bag MBR835RL Axial Lead 1500/Tape & Reel MBR840 Axial Lead 500 Units/Bag MBR840RL Axial Lead 1500/Tape & Reel MBR845 Axial Lead 500 Units/Bag MBR845RL Axial Lead 1500/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MBR835/D MBR835, MBR840, MBR845 THERMAL CHARACTERISTICS Characteristic Symbol 0.9 in x 0.9 in Copper Pad Size 6.75 in x 6.75 in Copper Pad Size Unit RθJL 13 12 °C/W RθJA 50 40 Thermal Resistance − Junction−to−Lead (See Note 2 − Mounting Data) Thermal Resistance − Junction−to−Ambient (See Note 2 − Mounting Data) ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 1) (iF = 8.0 Amps, TL = 25°C) vF Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 1) TL = 25°C TL = 100°C iR Max Unit V 0.55 mA 1.0 50 1. Pulse Test: Pulse Width = 300 μs, Duty Cycle = 2.0%. 30 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 30 10 100°C 1 0.1 75°C 125°C 25°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF, INSTANTANEOUS VOLTAGE (VOLTS) 10 MBR845 1 0.1 0.8 100°C 25°C 0.1 IR, INSTANTANEOUS REVERSE CURRENT (AMPS) Figure 1. Typical Forward Voltage 0.2 0.3 0.4 0.5 0.6 0.7 VF, INSTANTANEOUS VOLTAGE (VOLTS) 0.8 Figure 2. Maximum Forward Voltage 10,000 1E−01 125°C 1E−02 C, CAPACITANCE (pF) 100°C 75°C 1E−03 1E−04 25°C 1E−05 1E−06 75°C 125°C 0 5 10 15 20 25 30 35 40 VR, REVERSE VOLTAGE (VOLTS) 45 f = 1 MHz TJ = 25°C 1000 100 50 0.1 Figure 3. Typical Reverse Current 1 10 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Typical Capacitance http://onsemi.com 2 100 75 9 70 8 IF, AVERAGE FORWARD CURRENT (AMPS) COPPER AREA (sq in) MBR835, MBR840, MBR845 65 60 55 50 See Note 2 45 40 6 SQUARE WAVE 5 4 3 2 1 35 30 0 2 4 6 8 0 10 0 20 40 PFO, AVERAGE POWER DISSIPATION (WATTS) 100 120 Figure 5. RqJA versus Copper Area Figure 6. Current Derating − Lead 140 NOTE 2 — MOUNTING DATA 3.5 Mounting Method SQUARE WAVE 3 P.C. Board with 6.75 sq. in. copper surface. TJ = 125°C 2.5 ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ dc 2 1.5 1 0.5 0 2 4 6 10 8 IO, AVERAGE FORWARD CURRENT (AMPS) Figure 7. Forward Power Dissipation 1 80 TL, LEAD TEMPERATURE (°C) 4 0 60 RqJA (°C/W) 4.5 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE dc RqJL = 12°C/W 7 L = 3/8, Board Ground Plane D = 0.5 0.2 0.1 0.1 0.05 P(pk) 0.01 Copper Area = 0.271 sq. in. 0.01 0.001 0.0001 t1 RqJA = 61.8 °C/W SINGLE PULSE 0.001 0.01 0.1 1.0 t, TIME (sec) Figure 8. Thermal Response, Junction−to−Ambient http://onsemi.com 3 t2 DUTY CYCLE, D = t1/t2 10 100 1000 MBR835, MBR840, MBR845 PACKAGE DIMENSIONS AXIAL LEAD CASE 267−05 (DO−201AD) ISSUE G D K A 1 2 B K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B D K INCHES MIN MAX 0.287 0.374 0.189 0.209 0.047 0.051 1.000 −−− MILLIMETERS MIN MAX 7.30 9.50 4.80 5.30 1.20 1.30 25.40 −−− STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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