MBRS240LT3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package These devices employ the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features • • • • • http://onsemi.com SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 40 VOLTS Compact Package with J−Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guard−Ring for Overvoltage Protection Low Forward Voltage Drop Pb−Free Package is Available SMB CASE 403A PLASTIC Mechanical Characteristics • • • • • • Case: Molded Epoxy Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 95 mg (Approximately) Cathode Polarity Band Maximum Temperature of 260°C/10 Seconds for Soldering Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 40 V Average Rectified Forward Current (At Rated VR, TC = 100°C) IO 2.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 105°C) IFRM 4.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 25 A Tstg, TC −55 to +150 °C TJ −55 to +150 °C dv/dt 10,000 V/ms Storage/Operating Case Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25°C) MARKING DIAGRAM AYWW 2BL4G G 2BL4 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† MBRS240LT3 SMB 2500/Tape & Reel SMB (Pb−Free) 2500/Tape & Reel MBRS240LT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2008 November, 2008 − Rev. 5 1 Publication Order Number: MBRS240LT3/D MBRS240LT3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead (Note 1) Thermal Resistance, Junction−to−Ambient (Note 3) Symbol Value Unit RqJL RqJA 18 78 °C/W ELECTRICAL CHARACTERISTICS VF Maximum Instantaneous Forward Voltage (Note 2) TJ = 25°C TJ = 125°C 0.43 0.54 0.375 0.55 TJ = 25°C TJ = 100°C 2.0 0.5 60 40 (IF = 2.0 A) (IF = 4.0 A) see Figure 2 IR Maximum Instantaneous Reverse Current (Note 2) (VR = 40 V) (VR = 20 V) see Figure 4 V mA 1. Mounted with minimum recommended pad size, PC Board FR4. 2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%. 3. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. IF, INSTANTANEOUS FORWARD CURRENT (AMPS) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) TYPICAL CHARACTERISTICS 10 1.0 TJ = 125°C 25°C 85°C 0.1 0.0 0.1 -40°C 0.2 0.3 0.4 0.5 0.6 0.7 0.8 TJ = 125°C 85°C 0.1 0.0 0.1 25°C 0.2 0.3 0.4 0.5 0.6 0.7 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 0.8 100E-3 IR , MAXIMUM REVERSE CURRENT (AMPS) IR , REVERSE CURRENT (AMPS) 1.0 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 100E-3 TJ = 125°C 10E-3 85°C 1.0E-3 100°C 10E-3 1.0E-3 25°C 100E-6 100E-6 25°C 10E-6 10 10E-6 0 10 20 30 40 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current http://onsemi.com 2 40 MBRS240LT3 PFO , AVERAGE POWER DISSIPATION (WATTS) TYPICAL CHARACTERISTICS IO , AVERAGE FORWARD CURRENT (AMPS) 3.5 3.0 Freq = 20 kHz RqJL = 18°C/W dc 2.5 2.0 SQUARE WAVE 1.5 1.0 0.5 0 100 110 120 140 130 1.6 dc 1.4 SQUARE WAVE Ipk/Io = p 1.2 Ipk/Io = 5.0 1.0 Ipk/Io = 10 0.8 Ipk/Io = 20 0.6 0.4 0.2 0 150 0 TL, LEAD TEMPERATURE (°C) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Forward Power Dissipation 1000 1000 SURGE CURRENT (AMPS) C, CAPACITANCE (pF) TJ = 25°C 100 10 100 1.0 R T, TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0 1.0E+00 1.0E-01 1.0E-02 5.0 10 15 20 25 30 35 10 40 1.0 10 100 1000 VR, REVERSE VOLTAGE (VOLTS) PULSE WIDTH (mSEC) Figure 7. Capacitance Figure 8. Maximum Non−Repetitive Forward Surge Current 10000 50% 20% 10% 5.0% 2.0% 1.0% 1.0E-03 Rtjl(t) = Rtjl*r(t) 1.0E-04 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) Figure 9. Thermal Response http://onsemi.com 3 1.0 10 100 1000 MBRS240LT3 PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE G HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. E b DIM A A1 b c D E HE L L1 D POLARITY INDICATOR OPTIONAL AS NEEDED MIN 1.90 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.13 2.45 0.10 0.20 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.075 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.084 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.096 0.008 0.087 0.012 0.156 0.181 0.220 0.063 A L L1 A1 c SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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