NUF8001MU Low Capacitance 8 Line EMI Filter with ESD Protection in UDFN Package This device is an 8 line EMI filter array for wireless applications. Greater than −25 dB attenuation is obtained at frequencies from 800 MHz to 5.0 GHz. The NUF8001MU has a cut−off frequency of 160 MHz and can be used in applications for data rate up to 60 MHz or 120 Mbps. This UDFN package is specifically designed to enhance EMI filtering for low−profile or slim design electronics especially where space and height is a premium. It also offers ESD protection−clamping transients from static discharges. ESD protection is provided across all capacitors. Features • • • • • • • EMI Filtering and ESD Protection Integration of 40 Discrete Components Compliance with IEC61000−4−2 (Level 4): > 12 kV (Contact) UDFN Package, 1.2 x 3.5 mm, 0.4 mm Pitch Moisture Sensitivity Level 1 ESD Ratings: Machine Model = C Human Body Model = 3B This is a Pb−Free Device* Cd 2 15 Cd Cd 14 Cd Cd 4 13 Cd Cd Cd Cd 5 12 6 11 Cd Cd 10 Cd Cd 8 9 Cd Particularly for Portable Electronics Integrated Solution Offers Cost and Space Savings in UDFN Package Reduces Parasitic Inductances Which Offer a More “Ideal” Low Pass Filter Response Integrated Solution Improves System Reliability Cd (Top View) MARKING DIAGRAM 16 1 1 UDFN16 MU SUFFIX CASE 517AF Applications • • • • • • Cd 7 • Reduces EMI/RFI Emmisions on a Data Line • Low Profile Package; Typical Height of 0.5 mm • Design−Friendly and Easy−to−Use Pin Configurations, • 16 1 3 Benefits • • http://onsemi.com EMI Filtering and ESD Protection for Data Lines Keypad Interface and Protection for Portable Electronics Bottom Connector Interface for Mobile Handsets Notebook Computers and Digital Cameras LCD Display Interface in Mobile Handsets Camera Display Interface in Mobile Handsets 801 A Y W G *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 801 AYW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device Package Shipping † NUF8001MUT2G UDFN16 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 0 1 Publication Order Number: NUF8001MU/D NUF8001MU MAXIMUM RATINGS Parameter Symbol ESD Discharge IEC61000−4−2 Value VPP Unit kV Contact Discharge Machine Model Human Body Model 12 1.6 16 Operating Temperature Range TOP −40 to 85 °C Storage Temperature Range TSTG −55 to 150 °C TL 260 °C Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Maximum Reverse Working Voltage Breakdown Voltage Symbol Test Conditions Min Typ Max Unit 5.0 V 8.0 V 100 nA 100 115 12 15 VRWM VBR IR = 1.0 mA Leakage Current IR VRWM = 3.3 V Resistance RA IR = 20 mA Capacitance (Notes 1 and 2) Cd Cut−Off Frequency (Note 3) f3dB 6.0 85 10 Above this frequency, appreciable attenuation occurs 1. Measured at 25°C, VR = 2.5 V, f = 1.0 MHz. 2. Total Line Capacitance is 2 times the Diode Capacitance (Cd). 3. 50 source and 50 load termination. http://onsemi.com 2 7.0 160 pF MHz NUF8001MU TYPICAL PERFORMANCE CURVES (TA= 25°C unless otherwise specified) 0 0 −5 −10 −20 −15 S41 (dB) S21 (dB) −10 −20 −25 −40 −50 −30 −60 −35 −40 −70 10E+6 100E+6 1.0E+9 10E+9 10E+6 100E+6 1.0E+9 10E+9 FREQUENCY (Hz) FREQUENCY (Hz) Figure 1. Typical Insertion Loss Characteristic Figure 2. Typical Analog Crosstalk 110 2.0 108 106 1.5 RESISTANCE () NORMALIZED CAPACITANCE −30 1.0 0.5 104 102 100 98 96 94 92 0 0 1.0 2.0 3.0 4.0 90 −40 5.0 −20 0 20 40 60 80 REVERSE VOLTAGE (V) TEMPERATURE (°C) Figure 3. Typical Capacitance vs. Reverse Biased Voltage (Normalized Capacitance Cd at 2.5 V) Figure 4. Typical Resistance over Temperature http://onsemi.com 3 NUF8001MU PACKAGE DIMENSIONS UDFN16, 3.5x1.2, 0.4P CASE 517AF−01 ISSUE O 0.10 C PIN ONE REFERENCE 2X ÉÉÉ ÉÉÉ 0.10 C ÉÉ ÇÇ ÉÉ A3 A B D 2X E DETAIL A A1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. TOP VIEW (A3) DETAIL A DIM A A1 A3 b D D2 E E2 e K L A 0.10 C 16X SEATING PLANE 0.08 C SIDE VIEW D2 16X C A1 SOLDERING FOOTPRINT* 14X e L 8 1 1.35 E2 1 16X K 16 9 BOTTOM VIEW 16X MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.00 0.03 0.05 0.127 REF 0.15 0.20 0.25 3.50 BSC 2.70 2.80 2.90 1.20 BSC 0.20 0.30 0.40 0.40 BSC 0.20 −−− −−− 0.20 0.25 0.30 b 0.10 C A B 0.05 C 0.35 0.30 NOTE 3 0.10 2.85 15X 0.40 PITCH 0.20 16X 0.32 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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