ONSEMI NUF6402MN

NUF6402MN
4 Line EMI Filter with ESD
Protection
This device is a 4 line EMI filter array for wireless applications.
Greater than −30 dB attenuation is obtained at frequencies from
800 MHz to 3.0 GHz. It also offers ESD protection clamping transients
from static discharges. ESD protection is provided across all capacitors.
1
Features
•
•
•
•
•
•
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EMI Filtering and ESD Protection
Integration of 28 Discrete Components
DFN Package, 1.35 x 3.0 mm
Moisture Sensitivity Level 1
ESD Ratings: IEC61000−4−2 (Level 4)
Machine Model = C
Human Body Model = 3B
This is a Pb−Free Device*
12
2
11
Cd
Cd
Cd
Cd
Cd
Cd
Cd
3
10
4
9
Benefits
•
•
•
•
•
Cd
Reduces EMI/RFI Emissions on a Data Line
Integrated Solution Offers Cost and Space Savings in a DFN Package
Excellent S21 Characteristics with very Low Parasitic Inductances
Integrated Solution Improves System Reliability
Compatible Footprint to BGA or Flip−Chip Package
5
8
6
7
Applications
•
•
•
•
•
EMI Filtering and ESD Protection for Data Lines
Wireless Phones
PDAs and Handheld Products
Digital Camera
LCD Displays
(Top View)
MARKING
DIAGRAM
1
12
1
2
3
4
5
6
1
11
10
9
8
(Bottom View)
64
02
MG
G
6402= Specific Device Code
M = Month
G
= Pb−Free Package
(Note: Microdot may be in either location)
GND
12
DFN12
CASE 506AD
ORDERING INFORMATION
7
Device
NUF6402MNT1G
Package
Shipping†
DFN12
3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 1
1
Publication Order Number:
NUF6402MN/D
NUF6402MN
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
ESD Discharge IEC61000−4−2
Value
VPP
Unit
kV
Contact Discharge
8.0
Operating Temperature Range
TOP
−40 to 85
°C
Storage Temperature Range
TSTG
−55 to 150
°C
TL
260
°C
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds)
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Maximum Reverse Working Voltage
Breakdown Voltage
Symbol
Test Conditions
Min
Typ
VRWM
VBR
IR = 1.0 mA
Leakage Current
IR
VRWM = 3.0 V
Resistance
RA
IR = 20 mA
Capacitance (Notes 1 and 2)
Cd
Cut−Off Frequency (Note 3)
f3dB
Max
Unit
5.0
V
8.0
V
6.0
7.0
0.1
1.0
A
85
100
115
VR = 2.5 V, f = 1.0 MHz
17
20
pF
Above this frequency,
appreciable attenuation occurs
95
1. Measured at 25°C, VR = 2.5 V, f = 1.0 MHz.
2. Total line capacitance is 2 times the Diode Capacitance (Cd).
3. 50 source and 50 load termination.
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2
MHz
0
0
−5
−5
−10
−10
−15
−15
S21 (dB)
S21 (dB)
NUF6402MN
−20
−25
−25
−30
−30
−35
−35
−40
−40
−45
1.E+06
1.E+07
1.E+08
1.E+09
−45
1.E+06
1.E+10
1.E+07
1.E+08
1.E+09
1.E+10
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 4. Insertion Loss Characteristic
Figure 1. Analog Crosstalk Curve
2
110
108
106
1.5
RESISTANCE ()
NORMALIZED CAPACITANCE
−20
1
0.5
104
102
100
98
96
94
92
0
0
1
2
3
4
90
−40
5
REVERSE VOLTAGE (V)
−20
0
20
40
TEMPERATURE (°C)
60
80
Figure 3. Typical Resistance over Temperature
Figure 2. Typical Capacitance vs.
Reverse Biased Voltage
(Normalized Capacitance, Cd @ 2.5 V)
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3
NUF6402MN
PACKAGE DIMENSIONS
DFN12 3.0*1.35*0.85
CASE 506AD−01
ISSUE F
2X
0.15 C
A
D
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.25 AND 0.30 MM FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
5. EXPOSED PADS CONNECTED TO DIE FLAG.
USED AS TEST CONTACTS.
(A3)
E
2X
0.15 C
EXPOSED Cu
TOP VIEW
PIN ONE
REFERENCE
(A3)
0.10 C
A
12 X
0.08 C
SEATING
PLANE
SIDE VIEW
A1
2X
0.2 X 0.25 MM
NOTE 5
12 X
DIM
A
A1
A3
b
D
D2
E
E2
e
K
L
D2
L
e
1
12 X K
C
12
EXPOSED PAD
6
E2
7
12 X
b
SOLDERING FOOTPRINT*
BOTTOM VIEW
2.352
0.093
0.10 C A B
0.05 C
MILLIMETERS
MIN
MAX
0.80
1.00
0.00
0.05
0.20 REF
0.18
0.30
3.00 BSC
2.10
2.30
1.35 BSC
0.20
0.40
0.50 BSC
0.20
−−−
0.20
0.40
NOTE 3
0.351
0.014
0.479
0.019
0.265
0.01
SCALE 16:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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PUBLICATION ORDERING INFORMATION
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Phone: 81−3−5773−3850
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4
For additional information, please contact your
local Sales Representative.
NUF6402MN/D