ONSEMI NUF6401MNT1G

NUF6401MN
6 Line EMI Filter with ESD
Protection
This device is a 6 line EMI filter array for wireless applications.
Greater than −30 dB attenuation is obtained at frequencies from
800 MHz to 3.0 GHz. It also offers ESD protection clamping
transients from static discharges. ESD protection is provided across
all capacitors.
•
EMI Filtering and ESD Protection
Integration of 30 Discrete Components
DFN Package, 1.35 x 3.0 mm
Moisture Sensitivity Level 1
ESD Ratings: IEC61000−4−2 (Level 4)
Machine Model = C
Human Body Model = 3B
This is a Pb−Free Device*
Cd
Cd
Cd
Cd
Cd
Cd
Cd
Cd
Cd
Cd
Cd
11
3
10
4
Reduces EMI/RFI Emissions on a Data Line
Integrated Solution Offers Cost and Space Savings in a DFN Package
Excellent S21 Characteristics with very Low Parasitic Inductances
Integrated Solution Improves System Reliability
Compatible Footprint to BGA or Flip−Chip Package
9
5
8
6
Applications
•
•
•
•
•
Cd
2
Benefits
•
•
•
•
•
12
1
Features
•
•
•
•
•
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EMI Filtering and ESD Protection for Data Lines
Wireless Phones
PDAs and Handheld Products
Digital Camera
LCD Displays
(Top View)
MARKING
DIAGRAM
1
12
1
2
3
4
5
6
DFN12
CASE 506AD
1
GND
12
11
10
9
8
(Bottom View)
64
01
MG
G
6401= Specific Device Code
M = Month
G
= Pb−Free Package
(Note: Microdot may be in either location)
7
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 4
1
Device
Package
Shipping †
NUF6401MNT1G
DFN12
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NUF6401MN/D
NUF6401MN
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
ESD Discharge IEC61000−4−2
Value
VPP
Unit
kV
Contact Discharge
8.0
DC Power per Resistor
PR
100
mW
DC Power per Package
PT
600
mW
Operating Temperature Range
TOP
−40 to 85
°C
Storage Temperature Range
TSTG
−55 to 150
°C
TL
260
°C
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Test Conditions
Min
Typ
VBR
IR = 1.0 mA
6.0
7.0
Leakage Current
IR
VRWM = 3.0 V
Resistance
RA
IR = 20 mA
Capacitance (Notes 1 and 2)
Cd
Cut−Off Frequency (Note 3)
f3dB
Maximum Reverse Working Voltage
Breakdown Voltage
Symbol
VRWM
Max
Unit
5.0
V
V
0.1
1.0
A
100
115
VR = 2.5 V, f = 1.0 MHz
17
20
pF
Above this frequency,
appreciable attenuation occurs
110
1. Measured at 25°C, VR = 2.5 V, f = 1.0 MHz.
2. Total line capacitance is 2 times the Diode Capacitance (Cd).
3. 50 source and 50 load termination.
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2
85
MHz
NUF6401MN
0
0
−5
−10
−10
−20
S41 (dB)
S21 (dB)
−15
−20
−25
−30
−40
−50
−30
−60
−35
−70
−40
−45
1.0E+6
10E+6
100E+6
1.0E+9
−80
10E+6
10E+9
100E+6
FREQUENCY (Hz)
Figure 1. Typical Insertion Loss Characteristic
10E+9
Figure 2. Typical Analog Crosstalk
2
110
108
106
1.5
RESISTANCE ()
NORMALIZED CAPACITANCE
1.0E+9
FREQUENCY (Hz)
1
0.5
104
102
100
98
96
94
92
0
0
1
2
3
4
90
−40
5
REVERSE VOLTAGE (V)
Figure 3. Typical Capacitance vs.
Reverse Biased Voltage
(Normalized Capacitance, Cd @ 2.5 V)
−20
0
20
40
TEMPERATURE (°C)
60
80
Figure 4. Typical Resistance over Temperature
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3
NUF6401MN
PACKAGE DIMENSIONS
DFN12 3.0*1.35*0.85
CASE 506AD−01
ISSUE F
2X
0.15 C
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.25 AND 0.30 MM FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
5. EXPOSED PADS CONNECTED TO DIE FLAG.
USED AS TEST CONTACTS.
D
B
(A3)
E
2X
0.15 C
EXPOSED Cu
TOP VIEW
PIN ONE
REFERENCE
(A3)
0.10 C
A
12 X
0.08 C
SEATING
PLANE
SIDE VIEW
A1
2X
0.2 X 0.25 MM
NOTE 5
12 X
DIM
A
A1
A3
b
D
D2
E
E2
e
K
L
D2
L
1
12 X K
C
12
e
MILLIMETERS
MIN
MAX
0.80
1.00
0.00
0.05
0.20 REF
0.18
0.30
3.00 BSC
2.10
2.30
1.35 BSC
0.20
0.40
0.50 BSC
0.20
−−−
0.20
0.40
EXPOSED PAD
6
E2
7
12 X
BOTTOM VIEW
b
0.10 C A B
0.05 C
NOTE 3
SOLDERING FOOTPRINT*
2.352
0.093
0.351
0.014
0.479
0.019
0.265
0.01
SCALE 16:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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Email: [email protected]
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4
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Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
NUF6401MN/D