NE W Central BAW101 DUAL, ISOLATED HIGH VOLTAGE SWITCHING DIODES TM Semiconductor Corp. DESCRIPTION The CENTRAL SEMICONDUCTOR BAW101 type is a Silicon Dual Isolated High Voltage Switching diode designed for surface mount switching applications requiring high voltage capabilities. Marking Code is CJP. SOT-143 CASE MAXIMUM RATINGS (TA=25°C) Continuous Reverse Voltage SYMBOL UNITS 300 V Peak Repetitive Reverse Voltage VR VRRM 300 V Continuous Forward Current IF 200 mA Peak Repetitive Forward Current 500 mA Forward Surge Current, tp=1 ms IFRM IFSM 4500 mA Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ,Tstg Thermal Resistance QJA -65 to +150 °C 357 °C/W ELECTRICAL CHARACTERISTICS PER DIODE (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS IR IR VR=250V VR=250V, TA=150°C BVR VF IR=100mA IF=100mA CT trr MIN TYP MAX UNITS 150 nA 50 mA 300 V 0.9 1.3 V VR=0V, f=1.0MHz 5.0 pF IF=IR=30mA, Irr=3.0mA, RL=100W 50 ns 90 All Dimensions in Inches (mm). TOP VIEW LEAD CODE: 1) 2) 3) 4) Cathode 1 Cathode 2 Anode 2 Anode 1 R2 91