CENTRAL BAW101

NE
W
Central
BAW101
DUAL, ISOLATED HIGH VOLTAGE
SWITCHING DIODES
TM
Semiconductor Corp.
DESCRIPTION
The CENTRAL SEMICONDUCTOR BAW101
type is a Silicon Dual Isolated High Voltage
Switching diode designed for surface mount
switching applications requiring high voltage
capabilities.
Marking Code is CJP.
SOT-143 CASE
MAXIMUM RATINGS (TA=25°C)
Continuous Reverse Voltage
SYMBOL
UNITS
300
V
Peak Repetitive Reverse Voltage
VR
VRRM
300
V
Continuous Forward Current
IF
200
mA
Peak Repetitive Forward Current
500
mA
Forward Surge Current, tp=1 ms
IFRM
IFSM
4500
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
Thermal Resistance
QJA
-65 to +150
°C
357
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
IR
IR
VR=250V
VR=250V, TA=150°C
BVR
VF
IR=100mA
IF=100mA
CT
trr
MIN
TYP
MAX
UNITS
150
nA
50
mA
300
V
0.9
1.3
V
VR=0V, f=1.0MHz
5.0
pF
IF=IR=30mA, Irr=3.0mA, RL=100W
50
ns
90
All Dimensions in Inches (mm).
TOP VIEW
LEAD CODE:
1)
2)
3)
4)
Cathode 1
Cathode 2
Anode 2
Anode 1
R2
91