New Product EGF1T Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER® • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency • Avalanche surge energy capability • Meets environmental standard MIL-S-19500 • Meets MSL level 1, per J-STD-020, LF maximum peak of 250 °C DO-214BA (GF1) • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC PRIMARY CHARACTERISTICS TYPICAL APPLICATIONS IF(AV) 1.0 A VRRM 1300 V IFSM 20 A trr 75 ns EAS 15 mJ TJ max. 150 °C For use in high voltage rectification of photoflash application. MECHANICAL DATA Case: DO-214BA, molded plastic over glass body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code EGF1T UNIT ET Maximum repetitive peak reverse voltage VRRM 1300 V Maximum RMS voltage VRMS 910 V Maximum DC blocking VDC 1300 V Maximum average forward rectified current IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 20 A Non-repetitive avalanche energy at TA = 25 °C, IAS = 1 A, L = 30 mH EAS 15 mJ TJ, TSTG - 55 to + 150 °C Operating junction and storage temperature range Document Number: 88904 Revision: 15-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product EGF1T Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage 1.0 A Maximum DC reverse current VRM SYMBOL EGF1T UNIT VF (1) 3.0 V TJ = 25 °C TJ = 25 °C 5.0 IR (2) TJ = 125 °C μA 50 Typical reverse recovery time IF = 0.5 A, IR =1.0 A, Irr = 0.25 A trr 75 ns Typical junction capacitance 4.0 V, 1 MHz CJ 8.0 pF EGF1T UNIT Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance RJA (1) 50 RJL (1) 20 °C/W Note (1) Thermal resistance from junction to ambient and from junction to lead, PCB mounted on 0.95" x 0.95" (24 mm x 24 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N EGF1T-E3/67A EGF1T-E3/5CA UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.104 67A 1500 7" diameter plastic tape and reel 0.104 5CA 6500 13" diameter plastic tape and reel (1) 0.104 67A 1500 7" diameter plastic tape and reel EGF1THE3/5CA (1) 0.104 5CA 6500 13" diameter plastic tape and reel EGF1THE3/67A Note AEC-Q101 qualified (1) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 25 Forward Surge Current (A) Average Forward Current (A) 1.5 1.0 0.5 20 15 10 5 0 0 25 50 75 100 125 150 175 1 10 100 TL - Lead Temperature (°C) Number of Cycles Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Forward Surge Current www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 88904 [email protected], [email protected], [email protected] Revision: 15-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product EGF1T Vishay General Semiconductor 100 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TJ = 150 °C 10 TJ = 125 °C 1 0.1 TJ = 25 °C 1 0.01 0 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance Per Leg 100 100 Transient Thermal Impedance (°C/W) Instantaneous Reverse Leakage Current (µA) 10 TJ = 150 °C 10 TJ = 125 °C 1 0.1 TJ = 25 °C 0.01 1 0.1 0.001 10 20 30 40 50 60 70 80 90 10 100 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Leakage Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214BA (GF1) Cathode Band Mounting Pad Layout 0.066 (1.68) 0.040 (1.02) 0.076 (1.93) MAX. 0.066 (1.68) MIN. 0.187 (4.75) 0.167 (4.24) 0.015 (0.38) 0.0065 (0.17) 0.060 (1.52) MIN. 0.108 (2.74) 0.098 (2.49) 0.118 (3.00) 0.100 (2.54) 0.060 (1.52) 0.030 (0.76) Document Number: 88904 Revision: 15-Mar-11 0.006 (0.152) TYP. 0.220 (5.58) REF. 0.114 (2.90) 0.094 (2.39) 0.226 (5.74) 0.196 (4.98) For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 3 This datasheet is subject to change without notice. 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