VISHAY SS1P6LHM3-85A

New Product
SS1P5L thru SS1P6L
Vishay General Semiconductor
High Current Density Surface Mount
Schottky Barrier Rectifiers
FEATURES
• Very low profile - typical height of 1.0 mm
®
• Ideal for automated placement
eSMP Series
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per
LF maximum peak of 260 °C
J-STD-020,
• AEC-Q101 qualified
DO-220AA (SMP)
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
• Halogen-free according to IEC 61249-2-21 definition
IF(AV)
1.0 A
VRRM
50 V to 60 V
IR
50 A
EAS
11.25 mJ
VF at IF = 1.0 A
0.43 V
TJ max.
150 °C
MECHANICAL DATA
Case: DO-220AA (SMP)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
automotive grade
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters and polarity protection
applications.
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
SS1P5L
SS1P6L
15L
15L
50
60
UNIT
Maximum repetitive peak reverse voltage
VRRM
Maximum average forward rectified current (fig. 1)
IF(AV)
1.0
A
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
50
A
TJ, TSTG
- 55 to + 150
°C
Operating junction and storage temperature range
Document Number: 89063
Revision: 19-Apr-11
V
For technical questions within your region, please contact one of the following:
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[email protected], [email protected], [email protected]
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SS1P5L thru SS1P6L
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous
forward voltage
IF = 1.0 A
Maximum reverse current
Rated VR
Typical junction capacitance
SYMBOL
TA = 25 °C
VF (1)
TA = 125 °C
TA = 25 °C
4.0 V, 1 MHz
MAX.
UNIT
0.52
0.59
0.43
0.52
-
100
1.6
10
80
-
pF
SE1P6D
UNIT
V
IR (2)
TA = 125 °C
TYP.
μA
CJ
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
THERMAL CHARACTERISTICS (TA = 25 °c unless otherwise noted)
PARAMETER
SYMBOL
RJA
Typical thermal resistance
SE1P5B
(1)
125
RJL (1)
°C/W
25
Note
Thermal resistance from junction to ambient and junction to lead mounted on PCB with 5.0 mm x 5.0 mm copper pad areas. RJL - is
measured at the terminal of cathode band.
(1)
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SS1P6L-M3/84A
0.024
84A
3000
7" diameter plastic tape and reel
SS1P6L-M3/85A
0.024
85A
10 000
13" diameter plastic tape and reel
SS1P6LHM3/84A (1)
0.024
84A
3000
7" diameter plastic tape and reel
(1)
0.024
85A
10 000
13" diameter plastic tape and reel
SS1P6LHM3/85A
Note
(1) Automotive grade
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 C unless otherwise noted)
0.7
Resistive or Inductive Load
D = 0.8
0.6
1.0
Average Power Loss (W)
Average Forward Rectified Current (A)
1.2
0.8
0.6
0.4
TL Measured
at the Cathode Band Terminal
0.2
D = 0.5
0.5
D = 0.3
0.4
D = 0.2
D = 1.0
0.3
D = 0.1
T
0.2
0.1
D = tp/T
tp
0.8
1.0
0
0
90
100
110
120
130
140
150
0
0.2
0.4
0.6
1.2
Lead Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
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For technical questions within your region, please contact one of the following:
Document Number: 89063
[email protected], [email protected], [email protected]
Revision: 19-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SS1P5L thru SS1P6L
Vishay General Semiconductor
1000
TA = 150 °C
TA = 125 °C
10
1
TA = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
TA = 25 °C
100
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
10
0.1
10
100
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction to Capacitance
10 000
1000
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (µA)
1
Instantaneous Forward Voltage (V)
TA = 150 °C
1000
TA = 125 °C
100
10
TA = 25 °C
1
0.1
10
20
30
40
50
60
70
80
90
Junction to Ambient
100
10
1
0.01
100
0.1
10
1
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-220AA (SMP)
0.012 (0.30) REF.
Cathode Band
0.053 (1.35)
0.041 (1.05)
0.086 (2.18)
0.074 (1.88)
0.142 (3.61)
0.126 (3.19)
0.036 (0.91)
0.024 (0.61)
0.032 (0.80)
0.016 (0.40)
0.103 (2.60)
0.087 (2.20)
0.158 (4.00)
0.146 (3.70)
0.105
(2.67)
0.013 (0.35)
0.004 (0.10)
0.045 (1.15)
0.033 (0.85)
0.012 (0.30) 0.018 (0.45)
0.000 (0.00) 0.006 (0.15)
Document Number: 89063
Revision: 19-Apr-11
0.025 0.030
(0.635) (0.762)
0.100
(2.54)
0.050
(1.27)
For technical questions within your region, please contact one of the following:
www.vishay.com
[email protected], [email protected], [email protected]
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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