CMPD1001 CMPD1001A CMPD1001S SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high current capability. SOT-23 CASE The following configurations are available: CMPD1001 CMPD1001A CMPD1001S SINGLE DUAL, COMMON ANODE DUAL, IN SERIES MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Repetitive Reverse Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance MARKING CODE: L20 MARKING CODE: L22 MARKING CODE: L21 SYMBOL VR IF IFRM IRRM IFSM IFSM PD TJ, Tstg ΘJA UNITS V mA mA mA A A mW °C °C/W 90 250 600 600 6.0 1.0 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS IR 100 nA 100 μA IR BVR VR=90V VR=90V, TA=150°C IR=100μA VF IF=10mA 0.75 V VF IF=50mA 0.84 V VF IF=100mA 0.90 V VF IF=200mA 1.00 V VF IF=400mA 1.25 V CT VR=0, f=1.0MHz 35 pF trr IR=IF=30mA, Rec. to 3.0mA, RL=100Ω 50 ns 90 V R6 (25-January 2010) CMPD1001 CMPD1001A CMPD1001S SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE SOT-23 CASE - MECHANICAL OUTLINE PIN CONFIGURATIONS CMPD1001 CMPD1001A CMPD1001S LEAD CODE: 1) Anode 2) No Connection 3) Cathode LEAD CODE: 1) Cathode D2 2) Cathode D1 3) Anode D1, Anode D2 LEAD CODE: 1) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 MARKING CODE: L20 MARKING CODE: L22 MARKING CODE: L21 R6 (25-January 2010) w w w. c e n t r a l s e m i . c o m