Central CMPD1001 CMPD1001A CMPD1001S TM Semiconductor Corp. HIGH CURRENT SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high current capability. SOT-23 CASE The following configurations are available: CMPD1001 CMPD1001S CMPD1001A SINGLE DUAL, IN SERIES DUAL, COMMON ANODE MARKING CODE: L20 MARKING CODE: L21 MARKING CODE: L22 MAXIMUM RATINGS (TA=25oC) Continuous Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Repetitive Reverse Current Forward Surge Current, tp=1 µs Forward Surge Current, tp=1 s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR IF IFRM IRRM IFSM IFSM PD UNITS V mA mA mA mA mA mW 90 250 600 600 6000 1000 350 TJ,Tstg ΘJA oC oC/W -65 to +150 357 ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL BVR IR IR VF TEST CONDITIONS IR=100 µA VR=90V VR=90V, TA=150oC IF=10mA MIN 90 MAX 100 100 0.75 130 UNIT V nA µA V SYMBOL VF VF VF VF CT trr TEST CONDITIONS MIN IF=50mA IF=100mA IF=200mA IF=400mA VR=0, f=1 MHz IF=IR=30mA, RECOV. TO 3.0mA, RL=100Ω MAX 0.84 0.90 1.00 1.25 35 50 UNIT V V V V pF ns All dimensions in inches (mm). NO CONNECTION A A2 C1 A1, C2 C CMPD1001 CMPD1001S C1 C2 A1, A2 CMPD1001A R2 131