Central TM Semiconductor Corp. CMPTH10 NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH10 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise UHF/VHF amplifier and high output oscillator applications. Marking code is C3E. SOT-23 CASE MAXIMUM RATINGS (TA=25oC) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO PD UNITS V V V mW 30 25 3.0 350 TJ,Tstg ΘJA oC oC/W -65 to +150 357 ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VBE(ON) hFE fT Ccb Crb rb’Cc TEST CONDITIONS VCB=25V VEB=2.0V IC=100µA IC=1.0mA IE=10µA IC=4.0mA, IB=0.4mA VCE=10V, IB=4.0mA VCE=10V, IC=4.0mA VCE=10V, IC=4.0mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VCB=10V, IE=0, f=1.0MHz VCB=10V, IC=4.0mA, f=31.8MHz 208 MIN MAX 100 100 0.50 0.95 UNITS nA nA V V V V V 0.70 0.65 9.0 MHz pF pF ps 30 25 3.0 60 650 All dimensions in inches (mm). LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR R2 209