Central CMPT5401 TM Semiconductor Corp. PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5401 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. Marking Code is C2L. SOT-23 CASE MAXIMUM RATINGS (TA=25oC) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD 160 150 5.0 500 350 TJ,Tstg ΘJA -65 to +150 357 UNITS V V V mA mW oC oC/W ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL ICBO ICBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE fT Cob TEST CONDITIONS VCB=100V VCB=100V, TA=150oC IC=100µA IC=1.0mA IE=10µA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=50mA VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz 184 MIN MAX 50 50 160 150 5.0 0.2 0.5 1.0 1.0 50 60 50 100 UNITS nA µA V V V V V V V 240 300 6.0 MHz pF SYMBOL hfe NF TEST CONDITIONS VCE=10V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=200µA, RS=10Ω f=10Hz to 15.7kHz MIN 40 MAX 200 8.0 UNITS dB All dimensions in inches (mm). LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR R2 185