Central CZT2222A TM Semiconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR CZT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose amplifier and switching applications. SOT-223 CASE MAXIMUM RATINGS (TA=25oC) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD UNITS V V V mA W 75 40 6.0 600 2.0 TJ,Tstg ΘJA oC oC/W -65 to +150 62.5 ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL ICBO ICBO IEBO ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE TEST CONDITIONS VCB=60V VCB=60V, TA=125oC VEB=3.0V VCE=60V, VEB=3.0V IC=10µA IC=10mA IE=10µA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA MIN MAX 10 10 10 10 75 40 6.0 0.6 35 50 75 300 0.3 1.0 1.2 2.0 UNITS nA µA nA nA V V V V V V V SYMBOL hFE hFE hFE fT Cob Cib hie hie hre hre hfe hfe hoe hoe rb’Cc NF td tr ts tf TEST CONDITIONS MIN VCE=10V, IC=150mA 100 VCE=1.0V, IC=150mA 50 VCE=10V, IC=500mA 40 VCE=20V, IC=20mA, f=100MHz 300 VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz VCE=10V, IC=1.0mA, f=1.0kHz 2.0 VCE=10V, IC=10mA, f=1.0kHz 0.25 VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz 50 VCE=10V, IC=10mA, f=1.0kHz 75 VCE=10V, IC=1.0mA, f=1.0kHz 5.0 VCE=10V, IC=10mA, f=1.0kHz 25 VCB=10V, IE=20mA, f=31.8MHz VCE=10V, IC=100µA, RS=1.0kΩ, f=1.0kHz VCC=30V, VBE=0.5, IC=150mA, IB1=15mA VCC=30V, VBE=0.5, IC=150mA, IB1=15mA VCC=30V, IC=150mA, IB1=IB2=15mA VCC=30V, IC=150mA, IB1=IB2=15mA MAX 300 8.0 25 8.0 1.25 8.0 4.0 300 375 35 200 150 4.0 10 25 225 60 UNITS MHz pF pF kΩ kΩ x10 -4 x10-4 µmhos µmhos ps dB ns ns ns ns All dimensions in inches (mm). LEAD CODE: 1) 2) 3) 4) BASE COLLECTOR EMITTER COLLECTOR R2 301