CS220-12B CS220-12D CS220-12M CS220-12N CS220-12P 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 SILICON CONTROLLED RECTIFIER 12 AMP, 200 THRU 1000 VOLTS JEDEC TO-220AB CASE DESCRIPTION The CENTRAL SEMICONDUCTOR CS220-12B series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems. o MAXIMUM RATINGS (TC = 25 C unless otherwise noted) SYMBOL Peak Repetitive Off-State Voltage VDRM, VRRM IT(RMS) o RMS On-State Current (TC = 90 C) Peak One Cycle Surge (t = 10ms) I2t Value for Fusing (t = 10ms) CS220 -12B CS220 -12D CS220 -12M CS220 -12N CS220 -12P UNITS 200 400 600 800 1000 V 12 A ITSM I2t 120 72 A A2 s PGM PG(AV) 40 W 1.0 W 4.0 A Peak Forward Gate Voltage (tp =10µs) IFGM VFGM 16 V Peak Reverse Gate Voltage (tp =10µs) VRGM 5.0 V Critical Rate of Rise of On-State Current di/dt 100 A/µs Storage Temperature Tstg -40 to +150 o C -40 to +125 o C Peak Gate Power (tp = 10µs) Average Gate Power Dissipation Peak Forward Gate Current (tp = 10µs) Junction Temperature TJ ΘJ-A Thermal Resistance ΘJ-C Thermal Resistance 60 o C/W 2.5 o C/W o ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) SYMBOL TEST CONDITIONS IDRM, IRRM IDRM, IRRM IGT Rated VDRM, VRRM o Rated VDRM, VRRM, TC = 125 C IH VGT VTM dv/dt MIN MAX UNITS 0.01 mA 3.00 mA VD = 12V, RL = 33Ω IT = 100mA 15 mA 30 mA VD = 12V, RL = 33Ω ITM = 24A, tp = 10ms 1.50 V 1.60 V o VD = .67 x VDRM, TC = 125 C 200 TYP V/µs R2 ( 30-November 2001)