CS89M CS89N SURFACE MOUNT 0.8 AMP SILICON SCR 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CS89M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems. MARKING: FULL PART NUMBER SOT-89 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) Peak Repetitive Off-State Voltage RMS On-State Current (TC=60°C) Peak One Cycle Surge, t=10ms SYMBOL CS89M CS89N VDRM, VRRM IT(RMS) 600 800 I2t Value for Fusing, t=10ms Peak Gate Power, tp=10μs Average Gate Power Dissipation Peak Gate Current, tp=10μs Peak Gate Voltage, tp=10μs Operating Junction Temperature Storage Temperature Thermal Resistance ITSM I2t PGM PG (AV) IGM VGM TJ Tstg ΘJA ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM, IRRM IDRM, IRRM IGT Rated VDRM, VRRM, RGK=1KΩ Rated VDRM, VRRM, RGK=1KΩ, TC=125°C VD=12V IH VGT VTM dv/dt 0.8 TYP UNITS V A 10 A 0.24 A2s 2.0 W 0.1 W 1.0 A 8.0 V -40 to +125 °C -40 to +150 °C 104 °C/W MAX UNITS 1.0 μA 100 μA 20 200 μA RGK=1KΩ VD=12V 0.25 5.0 mA 0.61 0.8 V ITM=1.0A, tp=380μs VD=2 /3 VDRM, RGK=1KΩ, TC=125°C 1.2 1.7 25 V V/μs R1 (12-February 2010) CS89M CS89N SURFACE MOUNT 0.8 AMP SILICON SCR 600 THRU 800 VOLTS SOT-89 CASE - MECHANICAL OUTLINE (Bottom View) LEAD CODE: 1) Gate 2) Anode 3) Cathode MARKING: FULL PART NUMBER R1 (12-February 2010) w w w. c e n t r a l s e m i . c o m