CXT3019 SURFACE MOUNT NPN SILICON TRANSISTORS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT3019 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose amplifier applications. SOT-89 CASE MAXIMUM RATINGS (TA=25°C) SYMBOL VCBO 140 UNITS V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 7.0 V IC 1.0 A Collector-Base Voltage Collector Current Collector Current (Peak) ICM 1.5 A Power Dissipation PD 1.2 W TJ,Tstg -65 to +150 °C ΘJA 104 °C/W Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) hFE hFE hFE TEST CONDITIONS VCB=90V VEB=5.0V MIN IC=100µA IC=30mA 140 V 80 V IE=100µA IC=150mA, IB=15mA IC=500mA, IB=50mA 7.0 V IC=150mA, IB=15mA VCE=10V, IC=0.1mA VCE=10V, IC=10mA MAX 10 UNITS nA 10 nA 0.2 V 0.5 V 1.1 V 50 90 100 hFE VCE=10V, IC=150mA VCE=10V, IC=500mA hFE VCE=10V, IC=1.0A 15 300 50 R3 ( 20-December 2001) Central TM CXT3019 Semiconductor Corp. SURFACE MOUNT NPN SILICON TRANSISTORS ELECTRICAL CHARACTERISTICS (Continued) SYMBOL TEST CONDITIONS MIN fT Cob Cib VCE=10V, IC=50mA, f=1.0MHz VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz 100 NF VCE=10V, IC=100µA, RS=1kΩ, f=1.0kHz MAX UNITS MHz 12 pF 60 pF 4.0 dB SOT-89 CASE - MECHANICAL OUTLINE A E B G F H 1 C 3 2 J K R3 L M BOTTOM VIEW LEAD CODE: 1) EMITTER 2) COLLECTOR 3) BASE R3 ( 20-December 2001)