Central CXT5401 TM Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5401 type is an PNP silicon transistor manufactured bythe epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. SOT-89 CASE MAXIMUM RATINGS (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD 160 150 5.0 500 1.2 TJ,Tstg ΘJA -65 to +150 104 UNITS V V V mA W °C °C/W ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=120V 50 ICBO VCB=120V, TA=100°C 50 BVCBO IC=100µA 160 BVCEO IC=1.0mA 150 BVEBO IE=10µA 5.0 VCE(SAT) IC=10mA, IB=1.0mA 0.2 VCE(SAT) IC=50mA, IB=5.0mA 0.5 VBE(SAT) IC=10mA, IB=1.0mA 1.0 VBE(SAT) IC=50mA, IB=5.0mA 1.0 hFE VCE=5.0V, IC=1.0mA 50 hFE VCE=5.0V, IC=10mA 60 240 hFE VCE=5.0V, IC=50mA 50 fT VCE=10V, IC=10mA, f=100MHz 100 300 Cob VCB=10V, IE=0, f=1.0MHz 6.0 hfe VCE=10V, IC=1.0mA, f=1.0kHz 40 200 NF VCE=5.0V, IC=200µA, RS=10Ω f=10Hz to 15.7kHz 8.0 UNITS nA µA V V V V V V V MHz pF dB R3 ( 20-December 2001) Central TM CXT5401 Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR SOT-89 CASE - MECHANICAL OUTLINE A E B G F H 1 C 3 2 J K R3 L M BOTTOM VIEW LEAD CODE: 1) EMITTER 2) COLLECTOR 3) BASE R3 ( 20-December 2001)